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Reports on the room temperature deep-ultraviolet lasing of an optically pumped aluminum gallium nitride multiple-quantum well laser reported by Kogakuin University in Tokyo, Japan scientists. Emission capacity of the laser when pumped with pulsed 193-nm light from an argon fluoride excimer laser; Short-wavelength performance of the device.

Reports on the discovery of researchers at the University of Tokyo's Research Center of Advanced Science and Technology of a new approach to building multiple quantum wells using silicon germanium (SiGe) epitaxial layers. Finding that an energy-band configuration known as neighboring confinement structure (NCS) increases the intensity of light emitted from SiGe structures; Description of the process.