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Inorganic perovskite nanocrystals exhibit tremendous prospects in optoelectronics. Although the stability of perovskite nanocrystals is considerably improved after being embedded in a glass matrix, subtle difference in the glass composition is still an important factor affecting the glass matrix and perovskite precipitation behavior. In this study, a series of CsPbCl 2 Br 1 nanocrystal glasses with excellent optical properties were prepared by optimizing the composition. Further, we introduced Sm3+ into CsPbCl 2 Br 1 perovskite nanocrystal glass (PNG) to enhance photoluminescence (PL) emissions and improve the ultraviolet response and device stability of silicon photodetectors (Si PDs). After integrating the as-prepared Sm3+-doped CsPbCl 2 Br 1 PNG with Si PDs, the UV response of the Si PDs at 200–400 nm was significantly enhanced. In particular, the responsivity of Sm3+-doped CsPbCl 2 Br 1 PNG-coated Si PDs at 320 nm reaches 7.5 times that of bare Si PDs. Furthermore, Sm3+-doped CsPbCl 2 Br 1 PNG-coated Si PDs displayed good photocurrent stability, with a decrease of only 1.5% after 60 days of operation. Additionally, after integrating 10% Sm3+-doped CsPbCl 2 Br 1 PNG with InGaAs PDs, a broadband response in the ultraviolet to the infrared region is successfully achieved. This study attempts to fabricate perovskite nanocrystal glasses and provides a new perspective for next-generation high-performance UV PDs. [ABSTRACT FROM AUTHOR]

Silicon (Si) photodetectors (PDs) have been widely used due to their many excellent properties, however, the extremely weak ultraviolet (UV) photo-response severely affect its future development. In this work, we controlled the concentration of CsPbCl 2 Br 1 NCs in the glass and obtained samples with local emission and high transmittance. Furthermore, we incorporated Eu3+ into CsPbCl 2 Br 1 perovskite nanocrystals glass (PNG) to achieve efficient ultraviolet (UV) to visible emissions and boost the UV response of Si PDs. Finally, after combining with the CsPbCl 2 Br 1 : Eu3+ PNG on the Si PDs, the responsivity increased to 0.0088 A/W at 320 nm, which means 8.8 times higher than that of the pristine Si PDs. Moreover, Si PDs based on CsPbCl 2 Br 1 : Eu3+ PNG exhibited excellent stability, and the photocurrents of the device almost not changed after 60 days. This work offers a novel strategy for improving UV response of Si PDs. • Enhanced the R (reached 0.0088 A/W, D (up to an order of magnitude) and EQE (from 0 to 3.79%) of integrated Si PDs. • An effective enhancement in PLQY (from 6.8% to 28.1%) of CsPbCl 2 Br 1 PNGs by doping Eu3+. • The PNG with high transparence was successfully prepared by adjusting the content of CsPbCl 2 Br 1 NCs. • It is found that PNGs effectively avoid the instability in terms of water, thermal and UV light owing to protection of glass matrix. [ABSTRACT FROM AUTHOR]