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Your search keyword '"*FIELD-effect transistors"' showing total 3 results
Start Over Descriptor "*FIELD-effect transistors" Region korea
3 results on '"*FIELD-effect transistors"'

1. Model-Data Comparison of Total Dose Experiment on KITSAT-1.

Author

Sung-Joon Kim, Kyoung-Wook Min, Young-Hoon Shin, and Jong-Ho Seon

Subjects
*ARTIFICIAL satellites, *IRRADIATION, *METAL oxide semiconductor field-effect transistors, *RADIATION shielding
Abstract

Presents a study that analyzed the results of the KITSAT-1 Korean Satellite total dose experiment accumulated from September 1992 through December 1994 using a model developed for temperature-dependent irradiation. Background on oscillatory behaviors in the threshold voltage of radiation sensing field effect transistors; Assessment of changes in threshold voltage of metal oxide semiconductor field-effect transistors; Examination of the shielding thickness of the satellite.

Published
2002
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2. Cut to the ground.

Author

Davies, D.

Subjects
*ELECTRIC current grounding, *MODULATION-doped field-effect transistors, *MICROWAVE integrated circuits, *SUBSTRATES (Materials science)
Abstract

Researchers in Korea have presented a simple physical-dicing-based method for backside source grounding of high electron mobility transistors through 447 µm-thick SiC substrate without complex and costly pre-thinning treatments. [ABSTRACT FROM AUTHOR]

Published
2012
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3. ETRI debuts 3.3-V GaAs MESFET.

Author

Nak-Hieon, Kim

Subjects
*RESEARCH institutes, *MOBILE communication systems, *GALLIUM arsenide semiconductors, *METAL semiconductor field-effect transistors, *TECHNOLOGICAL innovations
Abstract

Reports on Taejon, South Korea's Electronics and Telecommunications Research Institute's (ETRI) development of a key part for handheld mobile devices. Development of gallium arsenide (GaAs) power metal semiconductor field-effect transistor (MESFET); Difference of device from one developed by Matsushita Electric Co. Ltd.

Published
1994

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