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In this paper, we investigate a technology to change the method and principle of n+ a‐Si:H etching from conventional dry etch to the innovative wet etch in TFT LCD fabrication. The technology is based on the development of a new wet metal etching solution and the design of the thinnest film thickness of a‐Si:H in the industry, combined with the etching process development, to achieve the etching of two different film layers of metal and N+ a‐Si:H in the back channel of TFT switches in one‐ step(Abbreviated as NW process). The process can effectively improve the capacity of Dry Etch process (Skip N+ Dry Etch); improve the uniformity of back channel a‐Si:H Remain (16.3%‐ >7.6%); improve product characteristics (Dark I on（ TFT working current） 5.5‐>6.0); improve yield (Yield rate↑0.3%).The process has been successfully developed for the first time in Wuhan BOE and has been widely used for batch products, meanwhile, the process has been extended to Hefei BOE and Fuzhou BOE, and other BOE line sites are also actively exploring the experiment. [ABSTRACT FROM AUTHOR]