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A flipped-classroom approach was implemented in a Circuits I class for electrical and computer engineering majors to lower its high attrition and failure rate. Students were asked to watch online lectures and then come to class prepared to work problems in small groups of four. The attitude, retention, and performance of students in the flipped group in Spring 2013 were compared to those for the traditionally taught group in Fall 2012. The Fall 2012 lectures were recorded, so that each group saw the same lectures. Student retention and test performance was significantly higher in the flipped course. In Fall 2012, 56% of the initially enrolled students received a C or better. In Spring 2013, this improved to 83%. The first exam scores were significantly better in Spring 2013, and this helped with student success. The authors believe that it was the alignment of online lectures, face-to-face student/teacher and peer/peer interactions, combined with the active learning component of the flipped classroom that led to these improvements.

We report the development of a process/device simulation platform to model superconductor electronics. The process simulator leverages the back-end modeling capabilities of Florida object-oriented process/device/reliability simulator (FLOOXS) and builds on the existing models to simulate processes specific to Josephson junction (JJ) fabrication. The device simulator uses the process generated models and computes the normal-state electrical properties of a Nb/Al-AlO/Nb JJ. It is used to predict key operational figures of merit and how they vary with changes in process models. By integrating the process and device simulation tools, this research aims to offer an environment for the simulation of JJ circuits. [ABSTRACT FROM AUTHOR]

N+ ion implantation to form resistive regions for edge termination at the anode contact periphery was used to maximize the breakdown voltage (VB) of vertical geometry β-Ga2O3 rectifiers. The design was examined via simulations using the Florida object oriented device and process Technology Computer-Aided Design (TCAD) simulator. The configuration of the implanted region was investigated with these simulations and then implemented experimentally. Significant increases of ∼200%–250% in VB were achieved for 50–1000 μm diameter rectifiers with an unbounded resistive region and an implantation depth of ∼0.5 μm. The on-state resistance and on/off ratios of the rectifiers were essentially unchanged by the addition of the implanted regions. An optimized implanted edge termination structure maximizes the breakdown voltage with no associated increase in device resistance in vertical geometry Ga2O3 rectifiers. [ABSTRACT FROM AUTHOR]