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Examines the formation of zinc selenide quantum dot arrays (QDA) on gallium arsenide surfaces. Usage of atomic force microscope; Dependence of QDA emission on temperature; Stability of QDA emission at high excitations.

Examines the natural formation of zinc cadmium selenide quantum dots on a cleavage-induced zinc selenide (ZnSe) (110) surfaces. Prevention of layer-by-layer growth of ZnSe layers; Introduction of surface roughness by the growth mode of deposited layer; Measurement of cathodoluminescence and microphotoluminescence.

We examined the early-stage (within a few hours) properties in air of nanometer scale islands formed on a CdSe/ZnSe surface. When a CdSe/ZnSe surface grown in vacuum was exposed to air, some islands were newly formed. The aspect ratio of the island was found to increase first and then decrease. A depletion zone was observed in the perimeter of the island which indicates the intermixing of ZnSe into the island. Surface analyses using Auger electron spectroscopy indicated that the island was composed mainly of oxides and the outer shell was Zn enriched and Cd depleted. This letter shows that surface oxidation plays a key role in the formation of islands on CdSe/ZnSe surfaces in atmosphere. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]