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The ferromagnetic properties are investigated in single crystal ZnO nanorods with heavy codoping of 28 at. % Mn and 1 at. % Fe fabricated by vapor phase transport. The electron energy loss spectroscopy and x-ray photoelectron spectroscopy confirmed that Mn and Fe dopants are, respectively, +2 and +3 valence states, where Raman scattering exhibited additional peaks at 308 cm−1, 458 cm−1, 480 cm−1, 504 cm−1, 516 cm−1, 530 cm−1, and 569 cm−1, associated with MnFe dopants. Compared with undoped and Mn doped ZnO nanostructures, the MnFe-codoped ZnO nanorods are strongly ferromagnetic below Tc of 39 K and around room temperature. The ferromagnetic behavior can be mainly attributed to the carrier-mediated Ruderman–Kittel–Kasuya–Yosida mechanism below Tc and the defect-induced bound magnetic polaron mechanism around room temperature. [ABSTRACT FROM AUTHOR]

Manufacturing high‐quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c‐plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic‐structure seeds, it was possible to fabricate polar c‐plane and nonpolar m‐plane aluminium‐doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c‐plane and m‐plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm‐thick m‐plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c‐plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c‐plane than in the m‐plane AZO film results from the electrical polarity along the c‐axis. The resistivity of the c‐plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high‐performance flexible ZnO devices. [ABSTRACT FROM AUTHOR]

The iodide interplay with polar Zn2+ and O2− induced nonpolar [10 1 ¯ 0] ZnO nanowires is fabricated via a simple vapor phase transport at a temperature of as low as 250 °C that is compatible with the nanodevice processing technique. As-fabricated nanowires exhibit single crystalline hexagonal wurtzite structures and grow along the [10 1 ¯ 0] direction instead of the conventional polar [0001] direction. The growth evolution can be explained by the synergy of the vapor–liquid–solid process and iodide direction-modulation. The electrical measurements demonstrate that the mobility of the PbI2-induced [10 1 ¯ 0] nanowires is significantly improved in comparison with that of the BiI3-modulated [11 2 ¯ 0] ones. These unique nonpolar nanowires are promising for improved high efficiency nanodevices. [ABSTRACT FROM AUTHOR]

[Display omitted] • We achieved ultrathin epitaxial ZnO thin-film actuators on flexible Hastelloy tapes. • We discovered higher piezoelectric constants in thinner epitaxial ZnO thin films. • We demonstrated tunable linear piezoelectric properties in strained ZnO thin films. Linear piezoelectric materials and devices potentially serve as high-accuracy and fast-response sensors and actuators. However, linear piezoelectrics have been scarcely studied, while tuning the linear piezoelectric response of undoped ZnO remains a challenge. Here, linear piezoelectric zinc oxide (ZnO) thin film actuators are fabricated with a sandwich structure of AZO/ZnO/AZO epitaxially on CeO 2 /Hastelloy substrates, with AZO denoting the aluminum-doped ZnO electrodes and CeO 2 denoting the cerium oxide buffer. Due to the lattice mismatch between ZnO and CeO 2 , compressive in-plane lattice strains are detected. Through varying the ZnO layer thickness, a strong correlation is found between the in-plane epitaxial strain and the piezoelectric constant which proves an effective method to improve the linear piezoelectric response of ZnO. Further, the better linear piezoelectric response of the thinner flexible ZnO layer resolves the controversy between the performance and the deformation-durability of flexible piezoelectric ZnO devices. The vertical piezoelectric constant of the ultrathin (∼32 nm) ZnO film is ∼ 8.14 pm/V, which is highly suitable for positioners working at the picometer scale. Future works harnessing the epitaxial strains to further improve the piezoelectric constant of ZnO materials potentially lead to the prosperity of linear piezoelectrics. [ABSTRACT FROM AUTHOR]

[Display omitted] • We achieved epitaxial linear-piezoelectric ZnO films on flexible substrates. • We enhanced the linear-piezoelectric constant of ZnO with epitaxial strains. • We proved the trivial impacts of textures on the piezoelectric constant of ZnO. Ferroelectrics are popular for sensors, actuators and transducers. However, the energy barrier for reversing the polarization leads to extra energy losses, while the hysteresis causes phase-lags and non-linearities between input and output signals. The high piezoelectric constants of ferroelectrics dictate the figure-of-merit of piezoelectric devices. Enhancing the piezoelectric constant of linear-piezoelectrics potentially leads to next-generation piezoelectric devices free from issues associated with ferroelectrics. By epitaxial growth of undoped ZnO films on flexible Hastelloy substrates, we demonstrated an ~85% improvement in the piezoelectric constant, and more importantly maintained the linearity of the piezoelectric response. Strong out-of-plane and in-plane crystallographic alignments are detected in the epitaxial sample, yet modeling of the effective thin-film piezoelectric constant shows only a limited contribution of the optimized textures. The improvement in the piezoelectric response is ascribed mostly to the in-plane epitaxial strain resulted from the lattice mismatch of ZnO to the substrate. The epitaxial ZnO film on Hastelloy promisingly offer high-precision positioners with nano-/pico-meter resolutions. Enhancing the piezoelectric constant by strain engineering potentially removes the barrier for applications of linear-piezoelectrics and enriches the piezoelectric research community. [ABSTRACT FROM AUTHOR]

This work presents a materially and structurally designed barrier thin film with a self-wrinkling morphology, which consists of composites of amorphous alumina (a-Al 2 O 3) and polycrystalline zinc oxide (ZnO). The pure ZnO, Al 2 O 3 films, and Al 2 O 3 -ZnO composited film are deposited on polyethylene terephthalate (PET) by magnetron co-sputtering at room temperature. The water vapor transmission rate (WVTR) for the composited film with about 30 % ratio of Al 2 O 3 to ZnO is down to 0.026 g·m−2·day−1 from 1.184 g·m−2·day−1 of pure ZnO film at 38 °C/90 % RH, indicating that the nanocomposite structure of amorphous Al 2 O 3 and crystalline ZnO can significantly improve the water-resistance performance. Theoretical calculations demonstrate that the amorphous Al 2 O 3 can dramatically suppress the defect fraction within ZnO from 4.65 % to 0.08 %. Furthermore, a self-wrinkling morphology with Al 2 O 3 -ZnO composited film deposited on PET/acrylic is designed to have the WVTR value as low as 1.30 × 10−3 g·m−2·day−1. Due to the stress release when forming micro-scale wrinkles, the more smooth and dense Al 2 O 3 -ZnO composited film can markedly sharpen up the barrier property. The low WVTR barriers via amorphous and crystalline hybrid composites with self-wrinkling morphology by magnetron sputtering potentially serve as a low-cost and large-scale production path for electronics encapsulation as compared to atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). [Display omitted] • Al 2 O 3 -ZnO film with an appropriate Al 2 O 3 ratio reduces water vapor transmission rate. • Amorphous Al 2 O 3 -crystalline ZnO hybrid film is deposited by magnetron co-sputtering. • A defect-mediated model for a single film on PET is proposed and applied to the system. • Al 2 O 3 -ZnO film with self-wrinkling morphology markedly sharpens up barrier property. [ABSTRACT FROM AUTHOR]