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Molybdenum doped vanadium oxide film on quartz and silicon substrates are grown by pulsed RF magnetron sputtering method. Surface morphology, phase analysis and oxide states are investigated by field emission scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy techniques, respectively. Crystalline nature of the film deposited on both quartz and silicon are depicted. The transmittance and reflectance spectra recorded for the entire solar region. Further, optical constants viz. optical band gap and refractive index of the deposited films are estimated. Wavelength dependent low reflectance characteristic is observed for the deposited film on silicon. IR emittance (εIR) and sheet resistance (Rs) of the film are also evaluated. Copyright © 2017 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Vanadium oxide films, deposited on aluminium (Al), titanium (Ti) and tantalum (Ta) metal substrates by pulsed RF magnetron sputtering at a working pressure of 1.5 x10−2 mbar at room temperature are found to display mixed crystalline vanadium oxide phases viz., VO2, V2O3, V2O5. The films have been characterized by field-emission scanning electron microscopy, X-ray diffraction, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy, and their thermo-optical and electrical properties have been investigated. Studies of the deposited films by DSC have revealed a reversible-phase transition found in the temperature range of 45–49 °C. [ABSTRACT FROM AUTHOR]