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In order to study the influence of the substrate bias on the properties of ZrN thin films deposited by radio-frequency magnetron sputtering for biomedical application. Films of ZrN were grown onto 316L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure zirconium target in Ar - N2 gas mixture. The substrate bias voltage was varied from 0 to −100 V, which produces a variation in the structural and electrochemical properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, scanning force microscopy and potentiodynamic polarization. [ABSTRACT FROM AUTHOR]

ZrO2 thin films were deposited on 316L stainless steel substrate by a radio-frequency magnetron sputtering system. The substrate bias voltage, the working gas rate and the reactive gas fraction in the gas mixture were varied. These variations produce a variation in the deferent properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, nano-indentation and potentiodynamic polarization. The experimental results show that the film thickness and the roughness of the films are highly influenced by the plasma parameters. XRD results show that the monoclinic phase is predominant in unbiased deposited films. The best anti-corrosion performance and hardness were obtained for ZrO2 deposited with a substrate bias voltage of −75 V, Ar rate of 6 sccm and oxygen fraction of 25%. [ABSTRACT FROM AUTHOR]

Titanium oxide (TiO2) films have been synthesized on quartz, silicon and textured silicon substrates by chemical ultrasonic spray deposition. The textured silicon substrate was carried out using Na2CO3 solution. The sample surface exhibits uniform pyramids with an average height of 5 µm. In this paper, particular attention is given to the TiO2 films prepared by spray ultrasonic system using Tetra iso-Propoxide Orthotitanate Titanium (TPOT) as a precursor. The solutions were sprayed onto substrates heated at various temperatures 350 - 550 °C. The properties of films as a function of temperature parameter were investigated using structural and optical analysis. According to XRD, FTIR and Micro-Raman spectroscopies, the anatase phase was found and exhibits nanograins of 9 to 15 nm in size. The indirect and direct bad gap were found to increase by increasing substrate temperature due to the decreasing of nanograins size and were estimated to be around 3.28 and 3.38 eV. A transmittance higher than 80% was found. This paper reports on anti-reflection coating application of TiO2 layers due to its good transparency and appropriate refractive index varies between 2.19 - 2.40 at λ = 632.8 nm as a function of temperature determined by UVVisNIR spectrophotometer and Ellipsometry. To achieve optimum anti-reflection characteristics different anti-reflection designs were experimentally examined with polished and textured substrates. The average reflectance of the polished silicon used in this study is 39%, with TiO2 it decreases to 9%. The textured surface reduces the average reflectance of silicon to be around 14% and it decreases dramatically to 5% after deposition of a single layer of TiO2 as an anti-reflection coating. The gain in density of the short-circuit photocurrent assigned to the reduction of reflection losses up to 44% and 58% were predicted with TiO2 single-coating in polished and textured silicon substrates respectively. [ABSTRACT FROM AUTHOR]

TiO 2 thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO 2 crystalline phase, we show in this study that it is possible to deposit crystalline TiO 2 thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R rms ), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO 2 crystallized thin films of engineered properties at room temperature. [ABSTRACT FROM AUTHOR]

Zirconium oxide (ZrO 2) thin films were grown onto 316L stainless steel by radio frequency magnetron sputtering (RFMS), at different substrate D.C. bias voltages (from 0 to −100 V). The deposition was performed using a pure zirconium target in the presence of an Ar-O 2 gas mixture. The characterization of the deposited films was performed using scanning Electron Microscope, atomic Force Microscopy, X-rays diffraction, Raman spectroscopy, nanoindentation and potentiodynamic polarization. The structures of all ZrO 2 films are crystalline. The monoclinic phase is predominant in the grounded films (0 V). However, the application of bias voltage depicts a tetragonal phase. Nanoindentation results reveal promoted values of the hardness of the ZrO 2 films. Corrosion behavior of the films was studied in Hank's solution using the potentiodynamic polarization method. The comparison between the uncoated samples and the coated ones showed a reduction in corrosion current density for coated samples. The minimum corrosion rate of the film deposited at −100 V was 0.04992 mpy, which is about 18 times less than that of the uncoated steel (0.88135 mpy). The optimum anti-corrosion performance and hardness were obtained for ZrO 2 deposited at a bias voltage of −100 V. • ZrO 2 films were deposited by magnetron sputtering from a metallic Zr target using oxygen as reactive gas. • ZrO 2 films with high hardness and high protective efficiency (94%) are demonstrated. • The hardness increases with the bias voltage applied to substrate. • Corrosion resistance is affected by negative bias voltage of ZrO 2 film. [ABSTRACT FROM AUTHOR]