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Two-dimensional (2D) boron nitride nanosheets (BNNSs) were chemically exfoliated from bulk boron nitride and coated onto the surface of a poly(ethylene oxide) (PEO)-based electrolyte through a dry-pressing transfer process. The fabricated BNNSs coating formed a robust interfacial layer to improve the chemical and mechanical stability of the PEO-based electrolyte, leading to the enhanced performance of solid-state Li metal batteries.

Using highly dispersed metal fluoride nanoparticles to construct a uniform fluorinated alloy type interfacial layer on the surface of Li metal anodes is realized by an ex situ solution chemical modification method. The fluorinated alloy-type interfacial layer can effectively inhibit the growth of undesirable Li dendrites while enhancing the performance of Li metal anodes.

All solid-state lithium (Li) metal batteries (SSLMBs) are attractive for prospective electrochemical energy storage systems on account of their high energy densities and good safeties. However, the incompatible interface between the solid-state electrolyte and Li metal anode limits the ability of SSLMBs. Here, a three-dimensional (3D) electronic and ionic mixed conducting interlayer is proposed to improve the interfacial affinity in SSLMBs. The 3D electronic and ionic mixed conducting interlayer is composed of a Sn/Ni alloy layer-coated Cu nanowire (Cu@SnNi) network. The Li plating demonstrates that the Cu@SnNi network can possess fast Li+ ion transport channels from the Li metal to LiFePO4, acting as a stable interlayer between the Li metal and solid polymer electrolyte. Noticeably, the solid-state LiFePO4/Li cell with a Cu@SnNi interlayer exhibits an excellent rate capability (133 mA h g–1, 2 C; 100 mA h g–1, 5 C) in comparison to the low rate performance of the cell without the interlayer (117 mA h g–1...

Aluminum substitution in CuInSe2could have important implications for photovoltaic applications. To better understand the Al doping effects, we have performed density functional calculations on the CuInSe2chalcopyrite as well as on Al-doped derivative compounds with different concentrations using the generalized gradient approximation. The structural and electronic properties of the pure and Al-doped CuInSe2have been calculated. We find that the substitution of In by Al creates structural deformation, and the band gap of CuIn1-xAlxSe2broadens as Al content increases. These are further discussed with the analysis of lattice parameters, bond lengths and angles, and electronic structures changes.