Search

A new two-element phase-locked loop (PLL)-coupled array for the implementation of millimeter-wave (mm-wave) and subterahertz (sub-THz) phased arrays is presented. This architecture avoids using lossy phase shifter to create the required phase shift between the adjacent elements in a phased-array system. The required phase shift is generated by utilizing a dual nested loop PLL. The two PLL loops work together to stabilize the frequency and create the required phase shift. Moreover, it can be scaled simply by adding more unit cells to the architecture. A 112–121-GHz two-element phased array is designed and fabricated in a standard 65-nm CMOS process. It consumes 147-mW power and provides a phase shift of 46.7° ranging from 58.53° to 105.2° at 117 GHz. [ABSTRACT FROM AUTHOR]

This article presents a 230-GHz wideband harmonic voltage-controlled oscillator (VCO) with large output power based on a compact and low-loss structure of coupled standing wave oscillators. In order to boost the output power, oscillators are coupled together without adding extra passive loss to the circuit. Transistors with inductive drain impedances provide the necessary negative resistance to the oscillators while simultaneously acting as active variable capacitors for frequency tuning and generate the desired second-harmonic power through their nonlinearities. Transmission lines at the drains are responsible for creating the inductive impedance as well as coupling adjacent oscillators and routing and combining the output power. Therefore, the circuit has a compact structure that minimizes passive losses. A varactor-less frequency tuning scheme is used and allows for wideband operation without sacrificing the output power. In addition to oscillator coupling and minimizing the losses, the output power has been boosted by engineering the harmonic impedance that is seen by the transistors in the circuit. The prototype chip was implemented in a 65-nm CMOS process. The output power of the VCO covers 219–238 GHz frequency band (8.35% tuning range) and delivers 3.4-dBm maximum output power. The minimum measured phase noise is −105.8 dBc/Hz (at 10-MHz offset) while consuming 195 mW from a 1.5-V supply. [ABSTRACT FROM AUTHOR]

In this paper, a 0.34-THz $2\times 2$ phased array integrated circuit is presented, which demonstrates a new approach for implementing phased arrays in the millimeter-wave (mm-wave)/terahertz (THz) spectrum. The circuit structure consists of four unit standing wave oscillators. In each cell, fundamental frequency ($f_{0}$) and odd harmonics are systematically cancelled, while the desired fourth harmonics ($4f_{0}$) are combined and radiated by on-chip patch antennas. A phase-shifter-less mechanism is employed based on combining standing and traveling waves to create the required phase shift between the sources for beam steering. The transistors provide negative resistance to the circuit and generate the desired fourth harmonics through nonlinearity. Simultaneously, transistors are employed as active variable capacitors for varactor-less frequency tuning. The implemented phased array is capable of independent wideband frequency tuning and 2-D wide-angle beam steering. The circuit is fabricated in a 0.13- $\mu \text {m}$ SiGe BiCMOS process and is measured to have 52-GHz/15.1% frequency tuning range from 318 to 370 GHz and 128°/53° 2-D beam-steering angle. The chip consumes 310–640 mW power from a 1.5-V supply with −6.8-dBm maximum radiated power and minimum −93.1-dBc/Hz phase noise at 10-MHz offset. To the best of our knowledge, this paper has the largest bandwidth among fully integrated THz radiator/phased arrays as well as the widest angle beam steering among fully integrated THz phased arrays. [ABSTRACT FROM AUTHOR]

In this paper, we present a new architecture for implementation of millimeter-wave (mm-wave) and terahertz (THz) radiator arrays based on standing-wave properties. This structure is a continuous distributed coherent array that avoids lossy and parasitic coupling networks. Moreover, it can be scaled simply by extending the size of the structure and replicating the unit cell. The absence of coupling parasitics in addition to the unique characteristics of standing waves allows us to extend the tuning range without using varactors. The 0.34-THz four-element radiator array is designed and fabricated in a 130-nm SiGe BiCMOS process using microstrip transmission lines as the standing-wave mediums and on-chip patch antennas to radiate the desired fourth harmonic of the oscillation. The circuit was measured with no post processing or silicon lens and has 5.9% frequency tuning range (332.5–352.8 GHz) with less than 6-dB output power variation across the band. It consumes 425-mW power from 1.8-V supply and the radiated power is −10.5 dBm at center frequency with −98.2 dBc/Hz phase noise at 10-MHz offset frequency. [ABSTRACT FROM PUBLISHER]

A voltage controlled oscillator (VCO) incorporating a system of coupled oscillators with two active mode switching (AMS) blocks is presented. The AMS blocks excite the main VCOs to operate in two distinct frequency bands. An overlap between the two frequency bands has extended the tuning range of the VCO. By turning the AMS blocks off, low-loss and low-capacitance behaviors of these blocks result in wide tuning range and high harmonic output power at high millimeter-wave frequencies. On the other hand, by turning the AMS blocks on, their loss-canceling and capacitance-tuning behaviors yield to higher power and wider tuning range with a lower center frequency. By having sufficient frequency overlap between the two modes, the implemented VCO achieves record tuning range of 20.7% at 190.5 GHz with a maximum output power of –2.1 dBm. This tuning range is significantly higher than reported silicon-based VCOs with center frequencies higher than 120 GHz. [ABSTRACT FROM PUBLISHER]

A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and a divider with three-phase injection is introduced. The CAV provides frequency tunability, enhances harmonic power, and buffers/injects the VCO fundamental signal from/to the divider. The locking range of the divider is vastly improved due to the fact that the three-phase injection introduces larger allowable phase change and injection power into the divider loop. Implemented in 90 nm SiGe BiCMOS, the synthesizer achieves a phase-noise of –77.8 dBc/Hz (–82.5 dBc/Hz) at 100 kHz (1 MHz) offset with a crystal reference, and an overall locking range of 280.32–303.36 GHz (7.9%). [ABSTRACT FROM AUTHOR]

A highly efficient push–push voltage-controlled oscillator (VCO) with a new inductive frequency tuning topology for (sub) terahertz frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base-degenerated transistor. The variable inductor exhibits high quality factor and high tuning range due to the tunable transistor transconductance via bias current. Fabricated in a 0.13-\mu\m SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and an output power of -7.2 dBm at 201.5 GHz. The dc power consumption of the VCO is 30 mW, resulting in a high dc to RF power efficiency of 0.6% and a figure of merit (FoMT) of -165, which is the highest FoM for any silicon-based VCO reported to date at this frequency range. To demonstrate the functionality of the tuning technique, three VCO prototypes at different oscillation frequencies, including one operating in the 222.7–229-GHz range, are implemented and measured. [ABSTRACT FROM PUBLISHER]

We introduce a novel frequency tuning method for high-power terahertz sources in CMOS. In this technique, multiple core oscillators are coupled to generate, combine, and deliver their harmonic power to the output node without using varactors. By exploiting the theory of nonlinear dynamics, we control the coupling between the cores to set their phase shift and frequency. Using this method, two high-power terahertz VCOs are fabricated in a 65 nm LP bulk CMOS process. The first one has a measured output power of 0.76 mW at 290 GHz with 4.5% tuning range and the output power of the second VCO is 0.46 mW at 320 GHz with 2.6% tuning range. The output power of these signal sources is 4 orders of magnitude higher than previous CMOS VCOs and is even higher than VCOs implemented in compound semiconductors with much higher cut-off frequencies. [ABSTRACT FROM AUTHOR]