1. Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET.
- Author
-
Valentin, Raphael, Bertrand, Guillaume, Puget, Sophie, Scheer, Patrick, Juge, André, Jaouen, Hervé, and Raynaud, Christine
- Subjects
METAL oxide semiconductor field-effect transistors ,SILICON-on-insulator technology ,GATE array circuits ,ELECTRIC contacts ,SIMULATION methods & models ,MATHEMATICAL models - Abstract
In this paper, we present the investigation of narrow-width effects (NWEs) on partially depleted (PD) silicon-on-insulator (SOI) with different gate shape topologies. Based on dc/ac measurements and TCAD simulations, it shows detailed clarifications of body-tied-induced NWEs. The overall study demonstrates relationship between gate shape topologies, body-tied shape, and electrical width of the transistor. Provided physical-based analytical models are able to capture peak GM and CGG as function of gate length, transistor width, physical gate-overlap width, and number of body tied. This results in improving the overall model accuracy of body contact and floating-body PD SOI MOSFETs. [ABSTRACT FROM PUBLISHER]
- Published
- 2011
- Full Text
- View/download PDF