1. Insertion of Hafnium Interlayer to Improve the Thermal Stability of Ultrathin TiSi x in TiSi x /n + -Si Ohmic Contacts.
- Author
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Liu, Yaodong, Sun, Xianglie, Xu, Jing, Gao, Jianfeng, Liu, Jinbiao, Zhou, Xuebing, Li, Yongliang, Li, Junfeng, Wang, Wenwu, Ye, Tianchun, and Luo, Jun
- Subjects
OHMIC contacts ,THERMAL stability ,HAFNIUM ,THIN films ,X-ray photoelectron spectroscopy ,TRANSMISSION electron microscopy - Abstract
Serious agglomeration of ultrathin TiSix employed in source–drain (S–D) ohmic contacts after high-temperature annealing was manifested in previous work. This severely restricts its application in state-of-the-art DRAM peripheral 3-D FinFET transistors. In this work, the effects of hafnium (Hf) interlayer on the thermal stability of ultrathin TiSix in TiSix/n+-Si ohmic contacts were systematically studied. As-prepared ultrathin TiSix and TiSix/n+-Si ohmic contacts with 0-, 1-, 2-, and 3-nm Hf interlayers were characterized by means of specific contact resistivity ($\rho _{\text {c}}$), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). It is found that compared to the counterparts with 0-, 2-, and 3-nm Hf, the presence of 1-nm Hf interlayer is proven to be effective in enhancing the thermal stability of ultrathin TiSix significantly. With 1-nm Hf, amorphous HfO2, and Hf silicate are readily formed, which hinders the interdiffusion between Ti and Si atoms and resultant agglomeration of ultrathin TiSix films. This is thought to be responsible for such a remarkably enhanced thermal stability of ultrathin TiSix in TiSix/n+-Si ohmic contacts. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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