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Data are presented to quantify the effect of the conduction band energy barrier (ΔEC,B) in the base region of the transistor laser on the minority carrier transport dynamics, recombination lifetime in the base region, and frequency response of the device. A greater ΔEC,B results in lower transistor current gain (β) and higher optical output power, indicating increased carrier confinement and recombination in the base. For a device with ΔEC,B = 41 meV, the measured bias-dependent optical frequency response and subsequent data fitting yield a short recombination lifetime of 30 ps in the base and a small resonance peak of 1.5 dB. A device with ΔEC,B = 82 meV exhibits a longer recombination lifetime of 70 ps and a larger resonance peak of 4dB. [ABSTRACT FROM AUTHOR]

A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold ITH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the 'fast' base recombination lifetime (τB < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f-3dB = 9.8 GHz at 15 °C for IB/ITH = 3.3 and 17 GHz at 0 °C for IB/ITH = 6.4. Under the same bias conditions, simultaneous electrical and optical 'open-eye' signal operations are demonstrated at 20 and 40 Gb/s data rate modulation. [ABSTRACT FROM AUTHOR]

Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (QW states, Δhν recombination radiation, sensitivity of Eλ0→Eλ1,λ0→λ1,λ0>λ1) on base-to-collector photon-assisted tunneling and laser operation. Transistor (electrical) and laser (optical) operation are locked and 'slide' up and down as a function of base current (IB), collector-base voltage (VBC or VCE), and the influence of QW bandfilling (with increased sensitivity at Eλ0→Eλ1) on photon-assisted base-collector tunneling. [ABSTRACT FROM AUTHOR]