1. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs.
- Author
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Pellish, Jonathan A., Reed, Robert A., McMorrow, Dale, Vizkelethy, Gyorgy, Cavrois, Veronique Ferlet, Baggio, Jacques, Paillet, Philippe, Duhamel, Olivier, Moen, Kurt A., Phillips, Stanley D., Diestelhorst, Ryan M., Cressler, John D., Sutton, Akil K., Raman, Ashok, Turowski, Marek, Dodd, Paul E., Alles, Michael L., Schrimpf, Ronald D., Marshall, Paul W., and LaBel, Kenneth A.
- Subjects
SEMICONDUCTOR junctions ,BIPOLAR transistors ,HEAVY ions ,OSCILLOSCOPES ,BROADBAND communication systems - Abstract
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and highand low-energy broadbeam sources at the Grand Accélérateur National d'Ions Lourds, Caen, France, and the University of Jyväskyla, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET. [ABSTRACT FROM AUTHOR]
- Published
- 2009
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