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For CoFeB/MgO-based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal. At high junction bias close to 1 V, the probability of magnetic switching in spin-torque-driven switches sometimes appears to decrease. This is shown to be due to a backhopping behavior occurring at high bias, and it is asymmetric in bias voltage, being more pronounced in the bias direction for antiparallel-to-parallel spin-torque switch, i.e., in the direction of electrons tunneling into the free layer. This asymmetry hints at processes involving hot electrons within the free-layer nanomagnet. [ABSTRACT FROM AUTHOR]

In some cases such as junctions with low magnetic thermal activation energy, the magnetization of the free layer in MgO-based magnetic tunnel junctions (MTJs) can back hop to its original direction after successful spin torque induced switching. The back-hopping is observed in both current directions corresponding to parallel-to-antiparallel and antiparallel-to-parallel switchings. For bias voltage pulses with increasing pulse width, the threshold voltage for back-hopping appears to decrease together with spin-torque switching and junction breakdown thresholds, but its rate of decrease is less. Increasing the anisotropy field Hk by increasing the MTJ aspect ratio can raise the threshold voltage of back-hopping significantly. [ABSTRACT FROM AUTHOR]

Key design parameters of 64 Mb STT-MRAM at 90-nm technology node are discussed. A design point was developed with adequate TMR for fast read operation, enough energy barrier for data retention and against read disturbs, a write voltage satisfying the long term reliability against dielectric breakdown and a write bit error rate below 10-9. A direct experimental method was developed to determine the data retention lifetime that avoids the discrepancy in the energy barrier values obtained with spin current- and field-driven switching measurements. Other parameters detrimental to write margins such as backhopping and the existence of a low breakdown population are discussed. At low bit-error regime, new phenomenon emerges, suggestive of a bifurcation of switching modes. The dependence of the bifurcated switching threshold on write pulse width, operating temperature, junction dimensions and external field were studied. These show bifurcated switching to be strongly influenced by thermal fluctuation related to the spatially inhomogeneous free layer magnetization. An external field along easy axis direction assisting switching was shown to be effective for significantly reducing the percentage of MTJs showing bifurcated switching. [ABSTRACT FROM AUTHOR]

Spin angular momentum transfer, or spin-transfer, describes the transfer of spin angular momentum between a spin-polarized current and a ferromagnetic conductor. The angular momentum transfer exerts a torque (spin-current induced torque, or spin-torque) on the ferromagnetic conductor. When its dimensions are reduced to less than 100 nm, the spin-torque can become comparable to the magnetic damping torque at a spin-polarized current of high current density (above 106 A/cm²), giving rise to a new set of current-induced dynamic excitation and magnetic switching phenomena. This has now been definitively observed in sub-100-nm current-perpendicular spin-valves and magnetic tunnel junctions, and appears promising as a basis for direct write-address of a nanomagnetic bit when the lateral bit size is reduced to well below 100 nm. An overview is presented in this paper of spin-transfer phenomena. The first part of the paper contains a brief introduction to spin-transfer, especially the characteristic dynamics associated with spin-torque. In the second part, several representative experiments are described. In the third part, a set of basic phenomenological models are introduced that describe experimental observations. The models also serve as a bridge for quantitative comparison between experiments and first-principles spin-polarized transport theory. In the last part of the paper, some device concepts based on spin-transfer-induced magnetic excitation and magnetic reversal are described. [ABSTRACT FROM AUTHOR]

Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model. [ABSTRACT FROM AUTHOR]

A correction to the article "Spin torque switching of perpendicular TA-CoFeB-MgO-based magnetic tunnel junctions" that was published in the March 30, 2016 issue is presented.

A pure spin current generated within a nonlocal spin valve can exert a spin-transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages across tunnel barriers that can suffer electrical breakdown. Here we report a quantitative measurement of this nonlocal spin torque using spin-torque-driven ferromagnetic resonance. Our measurement agrees well with the prediction of an effective circuit model for spin transport. Based on this model, we suggest strategies for optimizing the strength of nonlocal torque. [ABSTRACT FROM AUTHOR]