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Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counterpropagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This topological surface state crosses the bandgap of the TI and lives at the interface between the topological and a trivial material, such as vacuum. Despite its balanced perfection, it is rather useless for any practical applications. Instead, it takes the breaking of time-reversal symmetry (TRS) and the appearance of an exchange gap to unlock hidden quantum states. The quantum anomalous Hall effect, which has first been observed in Cr-doped (Sb,Bi)2Te3, is an example of such a state in which two edge channels are formed at zero field, crossing the magnetic exchange gap. The breaking of TRS can be achieved by magnetic doping of the TI with transition metal or rare earth ions, modulation doping to keep the electronically active channel impurity free, or proximity coupling to a magnetically ordered layer or substrate in heterostructures or superlattices. We review the challenges these approaches are facing in the famous 3D TI (Sb,Bi)2(Se,Te)3 family and try to answer the question whether these materials can live up to the hype surrounding them. [ABSTRACT FROM AUTHOR]

We present a nanoscale structural and density functional study of the Mn doped 3D topological insulator Bi2Te3. X-ray absorption near edge structure shows that Mn has valency of nominally 2+. Extended x-ray absorption fine structure spectroscopy in combination with electron energy loss spectroscopy (EELS) shows that Mn is a substitutional dopant of Bi and Te and also resides in the van derWaals gap between the quintuple layers of Bi2Te3. Combination of aberration-corrected scanning transmission electron microscopy and EELS shows that Mn substitution of Te occurs in film regions with increased Mn concentration. First-principles calculations show that the Mn dopants favor octahedral sites and are ferromagnetically coupled. [ABSTRACT FROM AUTHOR]

We investigate the magnetic properties of Ho-doped Bi2Te3 thin films grown by molecular beam epitaxy. Analysis of the polarized X-ray absorption spectra at the Ho M5 absorption edge gives an effective 4f magnetic moment which is ∼45% of the Hund's rule ground state value. X-ray magnetic circular dichroism (XMCD) shows no significant anisotropy, which suggests that the reduced spin moment is not due to the crystal field effects, but rather the presence of non-magnetic or antiferromagnetic Ho sites. Extrapolating the temperature dependence of the XMCD measured in total electron yield and fluorescence yield mode in a field of 7 T gives a Curie-Weiss temperature of ϑCW ≈ -30 K, which suggests antiferromagnetic ordering, in contrast to the paramagnetic behavior observed with SQUID magnetometry. From the anomaly of the XMCD signal at low temperatures, a Néel temperature TN between 10 K and 25 K is estimated. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2K with an effective magnetic moment of ~5 μB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling. [ABSTRACT FROM AUTHOR]

Topological insulator (TI) thin films of Bi [ABSTRACT FROM AUTHOR]

Abstract We studied the magnetodynamics of ferromagnetic films coupling across a topological insulator (TI) Bi 2 Se 3 layer using ferromagnetic resonance (FMR). TIs have attracted much attention across the physics community as they hold the potential for dissipationless carrier transport, extremely high spin-orbit torques, and are host to novel quantum effects. To investigate the coupling between the ferromagnetic (FM) layers, vector network analyzer (VNA)-FMR measurements of the resonance linewidth were performed as a function of bias field angle. By bringing the resonances of the two FM layers into close proximity, it was possible to observe antidamping torques that lead to a narrowing of linewidth, a characteristic of spin pumping. The element- and hence layer-specific technique of X-ray detected ferromagnetic resonance (XFMR) was used to circumvent the difficulty of obtaining accurate fits to the two overlapping resonances in close proximity. Our results confirm that the interaction across the TI is a dynamic exchange mediated by spin pumping, as opposed to a self-coupling of the surface state or similar, more unconventional mechanisms. [ABSTRACT FROM AUTHOR]

Magnetic doping of topological insulators (TIs) is a prerequisite for their application as spin-based devices. Using x-ray magnetic circular dichroism (XMCD) we investigate the influence of an ultralow coverage (~0.5% of a monolayer) of magnetic atoms on a TI substrate. For Fe and Co adatoms on Bi2Te3 at ~1.5 K we find an orbital-to-spin magnetic moment ratio of ~0.45. The magnetization curve of the Fe atoms recorded by XMCD is in quantitative agreement with a paramagnetic behavior with no indication of long-range magnetic order. The spectral shape of the XMCD indicates that the adatoms are weakly hybridized with the substrate and form narrowband states. The results show that the adatoms are not capable of breaking time-reversal symmetry. [ABSTRACT FROM AUTHOR]

Magnetic doping of topological insulators (TIs) is crucial for unlocking novel quantum phenomena, paving the way for spintronics applications. Recently, we have shown that doping with rare earth ions introduces large magnetic moments and allows for high doping concentrations without the loss of crystal quality, however no long range magnetic order was observed. In Dy-doped Bi 2 Te 3 we found a band gap opening above a critical doping concentration, despite the paramagnetic bulk behavior. Here, we present a surface-sensitive x-ray magnetic circular dichroism (XMCD) study of an in situ cleaved film in the cleanest possible environment. The Dy M 4 , 5 absorption spectra measured with circularly polarized x-rays are fitted using multiplet calculations to obtain the effective magnetic moment. Arrott–Noakes plots, measured by the Dy M 5 XMCD as a function of field at low temperatures, give a negative transition temperature. The evaporation of a ferromagnetic Co thin film did not introduce ferromagnetic ordering of the Dy dopants either; instead a lowering of the transition temperature was observed, pointing towards an antiferromagnetic ordering scenario. This result shows that there is a competition between the magnetic exchange interaction and the Zeeman interaction. The latter favors the Co and Dy magnetic moments to be both aligned along the direction of the applied magnetic field, while the exchange interaction is minimized if the Dy and Co atoms are antiferromagnetically coupled, as in zero applied field. [ABSTRACT FROM AUTHOR]

In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics. [ABSTRACT FROM AUTHOR]

Ferromagnetically doped topological insulators with broken time-reversal symmetry are a prerequisite for observing the quantum anomalous Hall effect. Cr-doped (Bi,Sb)2(Se,Te)3 is the most successful materials system so far, as it combines ferromagnetic ordering with acceptable levels of additional bulk doping. Here, we report a study of the local electronic structure of Cr dopants in epitaxially grown Bi2Se3 thin films. Contrary to the established view that the Cr dopant is trivalent because it substitutionally replaces Bi3+, we find instead that Cr is divalent. This is evidenced by the energy positions of the Cr K and L2,3 absorption edges relative to reference samples. The extended x-ray absorption fine structure at the K edge shows that the Cr dopants substitute on octahedral sites with the surrounding Se ions contracted by ▵ d=-0.36 Å, in agreement with recent band structure calculations. Comparison of the Cr L2,3 x-ray magnetic circular dichroism at T=5 K with multiplet calculations gives a spin moment of 3.64 μB/Crbulk, which is close to the saturation moment for Cr2+ d4. The reduced Cr oxidation state in doped Bi2Se3 is ascribed to the formation of a covalent bond between Cr d(eg) and Se p orbitals, which is favored by the contraction of the Cr-Se distances. [ABSTRACT FROM AUTHOR]

We have investigated the band structure at the Γ point of the three-dimensional topological insulator Bi2Se3 using magnetospectroscopy over a wide range of energies (0.55-2.2 eV) and in ultrahigh magnetic fields up to 150 T. At high energies (E>0.6 eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau-level dispersion becomes nonlinear. At higher energies around 0.99 and 1.6 eV, additional strong absorptions are observed with temperature and magnetic field dependences which suggest that they originate from higher band gaps. Spin-orbit splittings for the further lying conduction and valence bands are found to be 0.196 and 0.264 eV. [ABSTRACT FROM AUTHOR]

We report a study on the transition temperature TC of Cr-doped topological insulator thin films, where an increase in the ferromagnetic onset can provide a pathway towards low-power spintronics in the future. Arrott plots, measured by surface-sensitive x-ray magnetic circular dichroism at the Cr L2,3 edge as a function of field at various low temperatures, give a TC ≈7K for the pristine surface. This is comparable to the bulk value of the film, which means that there is no indication that the spontaneous magnetization is different near the surface. Evaporation of a thin layer of Co onto the pristine surface of the in-situ cleaved sample increases the ordering temperature near the surface to ~19K, while in the bulk it rises to ~10K. X-ray absorption spectroscopy shows that Cr enters the Bi2Se3 host matrix in a divalent state, and is unchanged by the Co deposition. These results demonstrate a straightforward procedure to increase the transition temperature of doped topological insulators. [ABSTRACT FROM AUTHOR]