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A number of reports have demonstrated the feasibility of oxide thin film transistors (TFTs) replacing silicon-based technology in active-matrix liquid-crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs). Among oxide materials, zinc tin oxide (ZTO) is being tipped off as an appropriate alternative for amorphous-silicon. ZTO tops its adversaries because it has a robust amorphous phase compared to ZnO and has a more simple composition compared to InGaZnO. Although ZTO TFTs showed their good performance, the stability issues of these devices have not yet been addressed. Because TFTs are used in display technology, the effect of light on their electrical performance is a vital matter that should be considered. Therefore, in this work, the effect of light illumination on the negative bias temperature instability (NBTI) of ZTO TFTs is investigated.

A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200°C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the “1” and “0” states is about 104.