Search

Dysprosium-doped lead zirconate titanate thin films (PbDyx(Zr0.40Ti0.60)1−(3x/4)O3) (x = 0%, 1%, 2%, 3%, 4%, 5%), abbreviated as PDZT, were prepared by sol–gel method. The effects of Dy doping on the crystal orientation, microstructure, and electrical properties of lead zirconate titanate (PZT) films were studied. X-ray diffraction (XRD) analysis shows that PDZT thin films with Dy concentration less than 3% exhibit (111) preferred orientation, and the samples doped with 3%, 4%, and 5% show (100) preferred orientation. Scanning electron microscope (SEM) analysis results show that all samples exhibit dense perovskite structure. With the increase of doping content, the electrical properties of PDZT films show a trend of first increasing and then decreasing. An enhanced residual polarization strength of 60.89 μC/cm2 and an improved relative dielectric constant of 943.1 at 0.1 kHz are obtained in 2% doped PDZT film. Moreover, the PZT film with 2% Dy doped also exhibits a significantly reduced leakage current density. [ABSTRACT FROM AUTHOR]

Multilayer PZT thin films composed of Pb1.10(Zr0.52,Ti0.48)O3 and Pb1.25(Zr0.52,Ti0.48)O3 films were deposited on Pt(111)/Ti/SiO2/Si(100) substrate coated by Pb1.10(Zr0.52,Ti0.48)O3 buffer layer using RF magnetron sputtering. The effect of variation of layer numbers of Pb1.10(Zr0.52,Ti0.48)O3 and Pb1.25(Zr0.52,Ti0.48)O3 thin films in multilayer PZT films was investigated. X-ray diffraction (XRD) analysis indicates all PZT films possess pure perovskite phase and (111) preferred orientation. For multilayer thin films, dense perovskite microstructures without obvious defects were observed using scanning electron microscope (SEM). Optimal dielectric properties with a εr of 1092 and a tanδ of 0.04 at 1 kHz were obtained in the PZT film with the maximum layer numbers (8-layer film, namely L-8). Well-saturated P–E was observed in L-8 film by a standard ferroelectric test system (Pr = 26.1 µC/cm2, Ec = 60.1 kV/cm). Moreover, a Lower leakage current density (J = 5.49 × 10−6 A/cm2 at 117 kV) was achieved in sample L-8. [ABSTRACT FROM AUTHOR]

Pb1.2−1.5xPrxZr0.52Ti0.48O3 (PPZT, x = 0%, 1%, 2%, 3%, 4%, 5%) thin films were prepared by sol–gel method on Pt(111)/Ti/SiO2/Si(100) substrates to investigate the effects of Pr doping on the crystalline structure, microstructure, dielectric properties, ferroelectric properties, and fatigue properties of PPZT thin films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that all the samples have completely perovskite structure with (100) preferred orientation. The maximum dielectric constant and remnant polarization were obtained in 2% Pr-doped film. The results of fatigue test revealed that the fatigue properties of PPZT films doped with Pr concentrations of 1% and 2% were significantly improved. [ABSTRACT FROM AUTHOR]

Pb1−x(LaxZryTi1−y)O3 (PLZT) (x = 0%, 2%, 4%; y = 0.45, 0.52, 0.60) thin films were fabricated by sol-gel process to investigate the effects of La-doped and Zr/Ti ratio on crystalline orientation, microstructure, and electrical properties of lead zirconate titanate films. The results of X-ray diffraction analysis showed that the orientation of the films with various La concentration change with the Zr/Ti ratio. The Zr-rich composition (y = 0.60) with the fixed 2% La doping concentration has the most (100) preferential orientation. Scanning electron microscope analysis showed that the films exhibit dense perovskite structure when the doping concentration was less than 4%. The maximum dielectric constant (1364.65 at 100 Hz), optimized ferroelectric properties, and a low leakage current density of 8.63 × 10−8 A cm−2 were obtained for 2% La-doped film with a Zr/Ti ratio of 60/40. The lowest value of coercive field (Ec) was generated in the film fabricated with a Zr/Ti ratio of 52/48 when the La doping concentration was 2%. Fatigue resistance was also improved with 2% La dopant for the films processed by a Zr/Ti ratio of 52/48 and 60/40. [ABSTRACT FROM AUTHOR]

Lead zirconate titanate (PZT) thin films deposited on Pt electrode and Pb1+x(Zr0.52,Ti0.48)O3(x = 0.10, 0.15, 0.25, 0.30) buffer layer have been prepared by sol-gel methods to investigate the effects of lead content in the buffer layer on crystalline orientation, electric and fatigue properties of PZT films. XRD and SEM showed that all films exhibited dense perovskite structure with (100) preferential orientation. The maximum dielectric constant (1571 at 100 Hz) was obtained in the PZT film with buffer layer containing 25% excess lead, which increased by 42.5% compared with the film without buffer layer. Fatigue resistance was improved by introducing buffer layer. [ABSTRACT FROM AUTHOR]

This paper describes the effects of pyrolysis temperature and film thickness before annealing on the orientation and microstructure of the lead zirconate titanate (PZT) thin films prepared by chemical solution deposition method (CSD). Different thickness of the pyrolytic films were obtained by repeating deposition and pyrolysis with different times. The orientation and microstructures of the PZT thin films were characterized by X-ray diffractometry (XRD) and field-emission scanning electron microscope (SEM). The results show that the thickness of the pyrolytic films was the principal factor that affects the crystalline structures in PZT thin films. [ABSTRACT FROM PUBLISHER]

0.3Pb(Mg 1/3 Nb 2/3)O 3 -0.7Pb(Zr 0.52 Ti 0.48)O 3 /Pb(Zr 0.52 Ti 0.48)O 3 (PMN-PZT/PZT) piezoelectric films have been deposited on Pt/Ti/SiO 2 /Si substrates via in-situ magnetron sputtering process. The purpose of this work was to investigate heterogeneous interfaces-dependent preferential orientation, micro-morphology, and piezoelectric behaviors of the PMN-PZT/PZT films. Uniform and dense columnar grains are observed by Scanning electron microscope (SEM) analysis as increasing the number of hetero-interfaces. For the film with five heterogeneous interfaces (H5), the superior ferroelectricity (2P r = 21.6 μC/cm2, 2 E c = 60 kV/cm) and dielectricity (ε r = 1012.1, tan δ = 0.022 at 1 kHz) are obtained, which arises from highly dense columnar grain and the influence of heterogeneous interface strain. Moreover, an excellent piezoelectric constant e 31 of 8.2C/m2 is achieved in H5 film, which is 3.5 times larger than that of PZT film. It is expected that this study will simulates the design and synthesis of new functional materials, and provides a guidance for actuators device fabrication and applications. [ABSTRACT FROM AUTHOR]

Lead zirconate titanate (PZT) films have been deposited on Ti–Pt/Ti/SiO 2 /Si(100) alloy substrates by sol-gel process. The purpose of the present study was to examine the Ti content in the Ti–Pt alloy layers-dependent preferred orientation and electrical behaviors of PZT films. X-ray diffraction (XRD) shows that Ti–Pt alloy electrodes induces texture transition from (100) to (111), and the maximum peak of (100) and minimum peak of (111) are obtained in the sample on Ti–Pt alloy layer with a sputtering power of 12.5 W/150 W. The film deposited on Ti–Pt alloy layer with a sputtering power of 12.5 W/150 W exhibits a reduced oxygen vacancies concentration, which results in a maximum ε of 1224.25, an enhanced 2 P r of 40.5 μC/cm2, and a relative decreased 2 E c of 108 kV/cm. Therefore, it can be concluded that the Ti–Pt alloy layers with an appropriate Ti content play a very critical role for the preferred orientation, microstructure, and improved electrical properties of the PZT films. [ABSTRACT FROM AUTHOR]

Ferroelectric multilayered thin film structures consisting of Pb 1.25 (Zr 0.52 ,Ti 0.48)O 3 and Pb 1.1 (Zr 0.52 ,Ti 0.48)O 3 have fabricated on Pt/Ti/SiO 2 /Si substrates by sol-gel synthesis. The effect of various layer ratios (m/n) of Pb 1.25 (Zr 0.52 ,Ti 0.48)O 3 and Pb 1.1 (Zr 0.52 ,Ti 0.48)O 3 thin films on the properties of PZT films were investigated. X-ray photoelectron spectroscopy (XPS) reveals that oxygen vacancies were suppressed by altering m/n. Dense perovskite structures were observed by Scanning electron microscope (SEM) analysis. Dielectric properties were enhanced significantly in the multilayered films. Especially, the ε r reaches 1873 at 1 kHz with a tanδ of 0.082 for the sample with a m/n of 1/3. Moreover, improved ferroelectricity (2 P r = 36.2 μC/cm2, 2 E c = 78 kV/cm), reduced leakage current density (2.91 × 10−7 A/cm2 at 185 kV/cm), and well fatigue resistance were obtained for the film (m/n = 1/3). [ABSTRACT FROM AUTHOR]

Pb(Zr 0·52 Ti 0.48)O 3 films have been deposited on Pt/Ti/SiO 2 /Si (100) substrates by radio frequency (RF) magnetron sputtering method based on a sol-gel derived Pb(Zr 0.30 ,Ti 0.70)O 3 (PZT) seed layer. Oxygen partial pressure-dependent crystal texture and electrical performance of PZT thin films, under the fixed Ar flow and sputtering pressure during deposition, were investigated. X-ray diffraction (XRD) analysis indicates that the major phase was transformed from perovskite phase containing little pyrochlore phase to pure perovskite phase with increasing oxygen partial pressure during sputtering. Atomic force microscopy (AFM) shows that the film processed by an O 2 /Ar composition of 10/90 demonstrated a compact and smooth surface. Dense perovskite structure without defects at the interface between seed layer and PZT film was observed utilizing Scanning electron microscope (SEM). Enhanced dielectricity (ε = 920.3, tan δ = 0.02 at 1 kHz) and ferroelectricity (2 P r = 22.8 μCcm−2, 2 E c = 97.9 kV/cm) were generated in the film processed with an O 2 /Ar composition of 10/90. Moreover, current-voltage (J-V) characteristic was also improved significantly with an O 2 /Ar composition of 10/90. • Crack-free PZT film with thickness of 1 μm prepared by RF method based on seed layer. • Film with a O 2 /Ar ratio of 10/90 demonstrated a compact and smooth surface. • Dense perovskite structure without defects at interface of seed layer and PZT film. • Improved dielectric and ferroelectric properties of films with a 10/90 O 2 /Ar ratio. [ABSTRACT FROM AUTHOR]

Lead zirconate titanate (Pb(Zr 0.60 Ti 0.40)O 3) thin films were deposited on Pt/Ti/SiO 2 /Si (100) substrates by radio frequency (RF) magnetron sputtering method based on sol-gel derived Pb 1+x (Zr 0.40 ,Ti 0.60)O 3 (x = 0.1, 0.15, 0.2, 0.25, 0.3) seed layer. X-ray diffraction (XRD) analysis shows that the degree of (100) preferred orientation first increased and then decreased with increased x values. Scanning electron microscope (SEM) analysis shows the films with seed layer exhibited dense perovskite structure. X-ray photoelectron spectroscopy (XPS) analysis reveals that x value had a significant influence on the oxygen vacancies and chemical state of lead element. Optimal dielectric properties with a permittivity of 916.4 and a loss factor of 0.027 at 100 Hz were obtained in PZT film with a seed layer of x = 0.2. A symmetric hysteresis loop with a larger remnant polarization 2 P r (39.2 μCcm−2) and relatively lesser 2 E c (109 kVcm−1) was obtained in film deposited on a Pb 1.2 (Zr 0.40 ,Ti 0.60)O 3 seed layer. Moreover, the film with a seed layer of x = 0.2 exhibited excellent piezoelectric properties. • Pb(Zr 0.60 Ti 0.40)O 3 thin films prepared based on Pb 1+x (Zr 0.40 ,Ti 0.60)O 3 seed layer. • Pb content in seed layer plays a critical role in improving orientation of PZT films. • Pb content in seed layer has a significant influence on the oxygen vacancies. • Improved dielectric and J-V properties of films with a seed layer of x = 0.2. • Enhanced displacement of micro-actuator by using PZT films with seed layer. [ABSTRACT FROM AUTHOR]