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Abstract: We present the growth of atomically flat topological crystalline insulator (TCI) SnTe films on Si(111) substrate by molecular beam epitaxy (MBE). The growth condition for achieving high quality SnTe film was established by a combination of reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) studies. In-situ angle resolved photoemission spectroscopy (ARPES) measurements elucidate the topological nature of the SnTe films. The electronic structure of SnTe films can be tuned by film thickness and Pb doping. The success in growing high quality SnTe thin films with tunable electronic structure is crucial for potential device applications. [Copyright &y& Elsevier]

Atomically flat thin films of topological semimetal Na3 Bi are grown on double-layer graphene formed on 6H–SiC(0001) substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for Na3 Bi thin films on double-layer graphene are successfully established. The band structure of Na3 Bi grown on graphene is mapped along Γ̄–M̄ and Γ̄–K̄ directions. Furthermore, the energy band of Na3 Bi at higher energy is uncovered by doping Cs atoms on the surface. [ABSTRACT FROM AUTHOR]