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Using a multielement antenna, we have performed measurements of the angular dependence of propagating magnetostatic spin waves in a thin yttrium iron garnet film, both in-plane and out-of-plane, and compared the measurements with existing theoretical models. For most magnetic field directions, theory and experiments agree reasonably well. However, there is a range of magnetic field directions where differences between theory and experiment become large. [ABSTRACT FROM AUTHOR]

We report experiments which characterize spin wave propagation in a thin (111) yttrium iron garnet film for arbitrary angles between the in-plane magnetic field and the mode wavevectors. By measuring the magnetic field evolution of the phase of the wave traveling across the film, we deduce the frequency dependence of the wavevector, the dispersion relation, from which the mode velocity follows. Additionally, we observe multiple nodes in the regime of the propagating Damon-Eshbach mode; these arise from avoided crossings associated with the higher, exchange split, standing wave modes along the film normal, the positions of which correlate with the direct absorption measurements of their positions. This information allows a determination of the exchange parameter. Using this technique, we examine the nonreciprocity in spin wave propagation that results from an adjacent metal layer. [ABSTRACT FROM AUTHOR]

Presents a study which obtained the estimates of the deposition probability for plasma-deposited amorphous silicon films using a Monte Carlo technique. Experimental details; Description of the Monte Carlo method; Simulation results; Conclusions.

We describe a technique that permits broad-band, field-dependent ferromagnetic and electron paramagnetic resonance absorption measurements that is applicable to thin films and patterned micro-/nanostructured arrays and is based on a wire-wound meanderline approach. Techniques to prepare meanderlines and perform microwave measurements are described along with some demonstrations involving an electron paramagnetic resonance calibration/test material, 2,2-diphenyl-1-picryl-hydrazyl, and a ferromagnetic cobalt thin film. [ABSTRACT FROM AUTHOR]

The physical and electrical properties of (Pb,Sr)TiO3 (PSrT) films annealed by various techniques are systematically investigated in this study. The crystallinity and ferroelectricity of PSrT films can be enhanced by excimer laser annealing (ELA), but the effect only works on the upper region of films. On the other hand, PSrT films treated by rapid thermal annealing (RTA) can also improve crystallinity and ferroelectricity. However, the leakage current of films is seriously increased due to defects and interfacial diffusion induced by post-RTA at high temperature. As a result, the laser-assisted two-step annealing (post-ELA+RTA) is proposed in this work. It is found that PSrT films treated by post-ELA+RTA show improved crystallinity, better ferroelectric properties, higher dielectric constant, and lower leakage currents, which bring out the longer lifetime and higher breakdown field. [ABSTRACT FROM AUTHOR]

A patterned square silver antidot lattice on a thin uniform permalloy film facilitates direct coupling of a quasi-uniform microwave field to short wavelength magnetic modes. The resulting modes are studied as a function of both the magnitude and orientation (relative to the symmetry axes of the array) of an in-plane, external DC magnetic field. The observed modes are identified as surface spin waves with wavelengths matching the Fourier components of the silver array. [ABSTRACT FROM AUTHOR]

The compositional profile of the interface between plasma-deposited amorphous silicon (a-Si[ATOTHER]@B:[/ATOTHER]H) and silicon nitride (a-SiNx:H) thin films has been examined using high depth resolution Rutherford backscattering spectrometry. We have optimized the grazing exit angle geometry of the measurement using a model calculation which predicts a ∼20 Å interface depth resolution. The fundamental noise sources considered in the calculation are the energy straggling and angular divergence of ions traversing the target, detector noise, and geometrical effects. Experimentally, the major compositional change for both Si and N is found to take place within the interface depth resolution which is 18 Å. However, we find a tail of ∼3 at. % nitrogen extending through a 50-Å a-Si:H layer deposited on top of a-SiNx:H. Such a tail is not expected for the reverse order of layer deposition. The compositional asymmetry depending on the order of deposition is presumably associated with the reported asymmetry in the charge density at interfaces. The nitrogen contamination further implies that most a-Si:H/a-SiNx:H quantum well structures are in fact based on nitrogen alloyed a-Si:H layers. [ABSTRACT FROM AUTHOR]