Search

The current-induced perpendicular magnetization switching in $L1$ 0-FePt single layer and Ta/FePt bilayer thin films was investigated. Here, $L1$ 0-FePt (6 nm) single-layer film and Ta (1–5 nm)/FePt (6 nm) bilayer films were deposited on MgO substrate at 700 °C, showing good perpendicular anisotropy with out-of-plane coercivity of 7.5 kOe for FePt and around 5 kOe for Ta/FePt bilayers. It was found that the current-induced partial magnetization-based switching was realized with the spin–orbit torque (SOT) switching ratio of about 3% in all films. For adding the Ta capping layer, the critical current density is reduced and the stability of the switching loop is relatively better when compared to the single FePt layer. Furthermore, harmonic Hall voltage results demonstrate that the SOT efficiency ($\beta _{\mathrm {DL}}$) of FePt single layer is approximately 50 Oe/(107 A cm−2) and significantly higher than that of Ta/FePt bilayers, which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported earlier. More importantly, Ta/FePt bilayer structure exhibits very good memristive switching behavior, which is expected to be applied to the spin-synapse of neural networks in the future. [ABSTRACT FROM AUTHOR]

We report the spatio-temporal separation of electron and phonon thermal transports in nanostructured magnetic L10 FePt films at the nanometer length scale and the time domain of tens of picosecond, when heated with a pulsed laser. We demonstrate that lattice dynamics measured using the picosecond time-resolved laser pump/X-ray probe method on the FePt (002) and Ag (002) Bragg reflections from different layers provided the information of nanoscale thermal transport between the layers. We also describe how the electron and phonon thermal transports in nanostructured magnetic thin films were separated. [ABSTRACT FROM AUTHOR]

In order to improve the resistive switching performance of SiO2-based resistance random access memory (RRAM) devices, the evolution from pure oxide-based devices to metallic nanoparticle dispersed oxide-based devices is investigated in this paper. It is found that a high ratio of dispersed-oxide/pure-oxide and thin SiO2 film can increase the uniformity and endurance of RRAM devices. Pure TiN/SiO2/Au RRAM devices show large distributions and poor endurance for repeated resistive switching process, while the TiN/SiO2:FePt/SiO2/Au RRAM devices exhibit higher uniformity and better endurance. Moreover, the fluctuations and degradation of high-resistance state and low-resistance state are observed in the former devices; by increasing the ratio of dispersed-oxide/pure-oxide in TiN/SiO2/SiO2:FePt/SiO2/Au, high consistency resistive switching is obtained. It is believed that the random formation of conducting filaments (CFs) causes poor performance of RRAM devices, and with a higher ratio of dispersed-oxide/pure-oxide the morphology of CFs is controlled due to the local field enhancement. The results in this paper may provide a method of fabricating high-performance RRAM devices for industry application. [ABSTRACT FROM AUTHOR]

The band gap and optical properties (dielectric functions and optical constants) of Ge thin films with various thicknesses below 50 nm, which were synthesized with electron beam evaporation technique, have been determined using spectroscopic ellipsometry and UV-visible spectrophotometry. The optical properties are well described with the Forouhi–Bloomer model. Both the band gap and optical properties show a strong dependence on the film thickness. For film thickness smaller than ∼10 nm, a band gap expansion is observed as compared to bulk crystalline Ge, which is attributed to the one-dimensional quantum confinement effect. However, a band gap reduction was observed for thickness larger than ∼10 nm, which is explained in terms of the amorphous effect in the Ge layers. [ABSTRACT FROM AUTHOR]

The magnetism-induced ferroelectricity in the E-type orthorhombic HoMnO3 (o-HMO) films grown on Nb-doped and undoped SrTiO3(001) substrates was studied. The temperature dependent magnetization in these films evidently exhibits an antiferromagnetic ordering around 44 K and an anomalous second magnetic ordering along the c-axis near 35 K. Interestingly, at this anomalous transition temperature, an associated ferroelectric polarization was probed by the P-E hysteresis measurements, indicating the intimated coupling between the ferroelectric response and the reordering of Mn spins, which has never been disclosed previously by dielectric constant measurements. [ABSTRACT FROM AUTHOR]

A study of the electrical properties and spatial distribution of the ZnO:Al (AZO) thin films prepared by dc magnetron sputtering at low deposition temperature was presented, with emphasis on the origin of the resistivity inhomogeneity across the substrate. Various growth conditions were obtained by manipulating the growth temperature TS, total pressure PT, and ion-to-neutral ratio Ji/Jn. The plasma characteristics such as radial ion density and floating/plasma potential distribution over the substrate were measured by Langmuir probe, while the flux and energy distribution of energetic species were estimated through Monte Carlo simulations. The crystalline, stress and electrical properties of the films were found to be strongly dependent on TS and Ji/Jn. Under the low Ji/Jn (<0.3) conditions, the TS exerted a remarkable influence on film quality. The films prepared at 90 °C were highly compressed, exhibiting poor electrical properties and significant spatial distribution. High quality films with low stress and resistivity were produced at higher TS (200 °C). Similarly, at lower TS (90 °C), higher Ji/Jn (∼2) dramatically improved the film resistivity as well as its lateral distribution. Moreover, it indicated that the role of ion bombardment is dependent on the mechanism of dissipation of incident species. Ion bombardment is beneficial to the film growth if the energy of incident species Ei is below the penetration threshold Epet (∼33 eV for ZnO); on the other hand, the energy subimplant mechanism would work, and the bombardment degrades the film quality when Ei is over the Epet. The energetic bombardment of negative oxygen ions rather than the positives dominated the resistivity distribution of AZO films, while the nonuniform distribution of active oxygen played a secondary role which was otherwise more notable under conditions of lower TS and Ji/Jn. [ABSTRACT FROM AUTHOR]

A semicontinuum model is presented for nanostructured materials that possess a platelike geometry, such as ultra-thin films. In contrast to the classical continuum theory, the current model accounts for the discrete nature in the thickness direction. In-plane Young's modulus, and in-plane and out-plane Poisson's ratios are investigated with this model. It is found that the values of the Young's modulus and Poisson's ratios depend on the number of atom layers in the thickness direction and approach the respective bulk values as the number of atom layers increases. [ABSTRACT FROM AUTHOR]

Presents a study which examined the thermal stability of gallium nitride thin films grown on (001) aluminum[sub2]oxygen[sub3] and (0001)[subsilicon] 6 hydrogen-silicon carbide substrates. Experimental method; Results; Discussion.

Presents information on a study which proposed a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride on different orientations of sapphire substrates. Description of large-band gap semiconductors; Methodology of the study; Results and discussion.

Focuses on a study which examined thin aluminum nitride (AlN) films grown on different orientations of sapphire substrates by metalorganic chemical vapor deposition. Description of the crystal; Epitaxial relationship between AlN and gallium nitride films and sapphire substrates; Discussion on results; Interpretation of results using extended atomic distance mismatch.

The effects of postdeposition annealing on the structural properties of CoCrPt/Ti magnetic thin films were investigated. The improvement of out-of-plane coercivity and squareness resulted from enhancement of both the crystallinity and texture of the CoCrPt (002) peak. The initial growth region of the CoCrPt layer and the Ti underlayer greatly improved in structural and magnetic properties through annealing. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The structure and interface of Co[SUB74]Cr[SUB16]Pt[SUB10] (40 nm thick)/Ti (10 nm thick) films for perpendicular magnetic recording were studied using x-ray scattering and transmission electron microscopy. Improved out-of-plane coercivity and squareness resulted from the combined effects of higher crystallinity and better texture of the CoCrPt (002) film, and increased interface roughness. The relationship of sputtering pressure to the structural effects is discussed. [ABSTRACT FROM AUTHOR]

There have been a number of studies on the fabrication of Sn-doped gallium oxide (Ga2O3:Sn) films with both conductive and transparent properties using a variety of deposition methods. However, often, synthesis results in films that are not transparent. In this paper, we examine the mechanisms underlying these results in Ga2O3:Sn thin films prepared at various growth temperatures, Sn concentrations, and oxygen partial pressures. With X-ray absorption spectroscopy, transmission electron microscopy and energy dispersive spectroscopy, we find that when films are grown under the oxygen deficient conditions there are Ga sub-oxide and SnOx phases in the Ga2O3:Sn thin film. These Ga sub-oxide phases are only found in non-transparent films, and so we infer that the Ga sub-oxide is responsible for the non-transparency. These observations suggest that to obtain transparent Ga2O3:Sn, films deposition or subsequent annealing must be carefully controlled in both temperature and oxygen partial pressure to avoid the formation of Ga sub-oxide [ABSTRACT FROM AUTHOR]

ZnO nanorod arrays were prepared by a sol-gel method in the present work. The effects of doping concentration and annealing time on the morphologies of ZnO:Al (ZAO) layers were investigated to clearly explore the growth process of ZnO nanorods by designing gradient structures and adjusting the annealing time. The results show that the doping level in the films is a key factor for the formation of nanorods and they cannot form at a low doping level. Out-of-plane anisotropic grain growth instead of the traditional in-plane coarsening process is observed with increasing annealing time. The growth model of nanorods is proposed in terms of the surface diffusion and Ehrlich-Schwoebel barrier (ES barrier) theory. [ABSTRACT FROM AUTHOR]

Dislocations form in epitaxial thin films above a critical thickness, when the stress due to the film-substrate mismatch becomes excessive. This phenomenon has been extensively investigated in non-piezoelectric thin films. In piezoelectric films, the mismatch strain field and the electric field are coupled, and the critical thickness depends on an extra physical variable: the electric field. In this paper, the critical thickness for dislocation formation in a piezoelectric film is derived. The dependence of the critical thickness on the piezoelectric properties of the Al x Ga 1- x N/GaN system is then discussed. [ABSTRACT FROM AUTHOR]

Coupled thermal and carrier transports (electron/hole generation, recombination, diffusion and drifting) in laser photoetching of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley–Read–Hall) non-radiative recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature rises rapidly as the laser intensity exceeds 10[sup 5] W/m[sup 2] . Below a laser intensity of 10[sup 5] W/m[sup 2] , the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule heating. [ABSTRACT FROM AUTHOR]

Ti thin film is widely used as a diffusion barrier to impede the Al/Cu migrating to the Si substrate in the applications requiring high temperature processes such as high temperature sputtering and reflow developed for via-filling. To improve the bottom coverage without losing the excellent diffusion blockage and other electronic properties, the ionized metal plasma (IMP) deposition technique has been developed. This method has better control of the angular distribution on the substrate, and thus has been used to deposit Ti as diffusion barriers for the subquarter micron device applications. However, the formation mechanism of the epitaxy Ti thin film deposited by ionic metal plasma deposition is not clear. In this work, the epitaxy Ti thin film has been characterized by the transmission electron microscope. The mechanism of the epitaxy Ti thin film formation and also the crystallographic relationship between the Ti and A1 thin films in the IMP deposition have been analyzed in detail. The results show that the lattice image of the Ti layer in the sample as deposited has a square-block-like structure with the c axis perpendicular to the interfaces. This structure has anisotropic diffusion properties that can retard the diffusion of A1 across the Ti layer in the initial stage of the high temperature Al sputtering or reflow processes. [ABSTRACT FROM AUTHOR]

Epitaxial magnetoelectric Pb(Zr0.52Ti0.48)O3/SrRuO3/CoFe2O4 composite thin films are fabricated on SrTiO3 single crystal substrate by pulsed-laser deposition. x-ray diffraction study reveals their crystalline structure and epitaxial relationship, which is cubic on cubic without in-plane rotation. The good dielectric, ferroelectric, and magnetic properties for the heteroepitaxial films are obtained simultaneously under room temperature, and the magnetoelectric coupling effect is manifested by the magnetic-field-dependent ferroelectric characteristics and spectroscopic dielectric constant. [ABSTRACT FROM AUTHOR]

Zn1-xCdxO films (0≤=x≤=0.179) were grown on Si (001) substrates at 750 °C with a radio-frequency reactive magnetron sputtering method. Difference between the photoluminescence (PL) spectra taken at room temperature (RT) and at 12 K is reported and is deduced to be the result of PL emission from the ZnCdO phases with wurtzite and zinc blende structures. It is also found that the RT PL intensity is in inverse proportion to the carrier concentration in the films. Cd incorporation results in the transform of conductivity from p type to n type and a decrease of carrier mobility [ABSTRACT FROM AUTHOR]

Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was observed on Si (001) substrate at different temperatures ranging from room temperature to 750 °C. The epitaxial relationship was determined to be ZnO(001)∥Si(001) in the direction normal to the surface of the films with a deviated angle less than 3° and ZnO[100]∥Si[110] or ZnO[310]∥Si[110] in the plan view. Based on (2×1) reconstruction of Si (001), a heteroepitaxial model was suggested to discuss the influence of Si (001) substrate on the growth and morphology of ZnO films at different temperatures. [ABSTRACT FROM AUTHOR]

The phase miscibility of Co, Cr and Pt in oriented nanostructured CoCrPt magnetic thin films was investigated using anomalous x-ray scattering (AXS) from the (002) reflection and extended x-ray absorption fine structure (EXAFS) at Co K, Cr K and Pt LIII edges. The AXS measurements at Co K edge clearly showed the presence of Co in the crystalline region. However, Cr was not detected in the lattice. The EXAFS at Co K edge indicated that the nearest neighboring atoms of Co were mixed with 80% Co and 20% Pt, consistent with the results of EXAFS at Pt LIII edge. Our observations suggested that only Pt and Co were at the Co (002) lattice of the nanotextured CoCrPt thin films. This indicated that the AXS alone may not be reliable to determine the phase miscibility in textured thin films. Complementary information from the EXAFS was useful to understand the phase miscibility of nanoscale materials. [ABSTRACT FROM AUTHOR]

Epitaxial Fe[sub 50]Pt[sub 50] (30 nm) magnetic thin films were sputter-deposited on Cu (001) single crystal substrate. The fct L1[sub 0] ordered FePt (200)〈001〉Cu (002)〈100〉 epitaxial relationship was observed using high-resolution x-ray scattering. The L1[sub 0] ordered FePt film sputtered at 400 °C with well-controlled easy-axis distribution (full width at half-maximum=2.36°), small grain size (10 nm), and high in-plane coercivity (4.4 kOe) is a potential candidate for ultrahigh-density longitudinal magnetic recording media. [ABSTRACT FROM AUTHOR]

Local electron field emission properties of diamondlike carbon (DLC) films were measured by a probe method in 1 atmosphere ambient pressure, using the modified scanning tunneling microscopic (STM) system, and the diode method. In the STM probe method, the field emission was turn on at a low bias as +2.67 V. A large emission current of 40 nA was attained at +7 volt bias voltage and the emission current density was estimated as Jt=5 A/cm2. By contrast, the current–voltage (I–V) characteristics of the same DLC films measured by diode method in 10-6 Torr ambient pressure revealed that the electron field emission was produced for a 13.2 V/μm electric field, and a high emission current density of J=160 μA/cm2 was obtained for a E=20 V/μm electric field. The geometrical enhancement factor (α), evaluated from the Fowler–Nordheim plot was around α=30, which is larger than what would be expected from a planar surface. This can be interpreted as the evidence that electrons are emitted locally from spherical SP3 clusters. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We measured the emission of (In,Al) GaN films under high intensity optical pumping both in the direction parallel and perpendicular to the film growth. In the edge emission geometry we determine the gain magnitude from the variable stripe length method. We use the spontaneous emission collected perpendicular to the layer plane to calculate the spectral dependence of the gain. Finally, we compare the emission spectra with those obtained for high quality GaAs thin films and find that the observation of a stimulated emission peak perpendicular to the nitride layer plane is predominantly due to scattering of the in-plane stimulated emission. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Alternating multilayer diamond-like carbon (DLC) films [(Cr, N)-DLC/DLC] with different sp 3 contents in DLC layer have been prepared on YG8 (WC-Co) substrates by FCVA combined with DCVA technique. The structure was investigated by scanning electron microscopy and transmission electron microscopy. Chemical bonding was studied by Raman spectroscopy and X-ray photoelectron spectroscopy. Mechanical and tribological properties including residual stress, hardness, adhesion strength and wear resistance were evaluated by film stress tester, nanoindenter, scratch tester, ball-on-disk tribometer and surface profiler. The results showed that (Cr, N)-DLC layer had the composite structure of amorphous phase as base interspersed with a small amount of nano-crystals. The co-doping of Cr and N into DLC reduced the film's residual stress from − 1.62 GPa to − 0.99 GPa. For monolayer DLC, both the sp 3 content and residual stress decreased as the substrate's bias voltage increased in the range of − 100 V to − 600 V. And the decrease of sp 3 content contributed to an increase of the (Cr, N)-DLC/DLC films' toughness. In addition, the multilayer films presented good adhesion strength on YG8 substrates. The wear rates of all multilayer films belonged to the order of magnitude of 10 − 7 mm 3 /Nm. Prime novelty statement Multilayer films consisting of DLC and DLC co-doped with metal and nonmetal atoms [(Cr, N)-DLC/DLC multilayer films] have been prepared by FCVA combined with DCVA technique and investigated systematically. The composite structure of the (Cr, N)-DLC layer is based on amorphous phase and contains a small number of nano-crystalline compounds of chromium. [ABSTRACT FROM AUTHOR]

Highlights: [•] Two Co modified NiAl coatings have been prepared by a novel two-step process. [•] The addition of Co improves the corrosion resistance in sulphate salts. [•] The addition of Co reduces the corrosion resistance in chloride salts. [•] The enhancement in sulphate salt is due to the high melting point of Co-Co x S y . [•] In chloride salt the formation of volatile CoCl2 speeds up the corrosion rate. [ABSTRACT FROM AUTHOR]

Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using diluted tetrachlorosilane (SiCl4) with various hydrogen flow rates (Hf) by plasma enhanced chemical vapor deposition (PECVD) at a constant substrate temperature (Ts) as low as 120°C. Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), infrared spectra (IR) and spectroscopic ellipsometry (SE) were employed to investigate the microstructure and hydrogen bonding of the nc-Si:H films. Our results showed that the microstructure and hydrogen content of the films could be effectively tailored by the hydrogen flow rates, and a distinct transition from amorphous to nanocrystalline phase was observed with an increase of Hf. At an optimal preparation condition, a deposition rate was as high as 3.7nm/min and the crystallinity reached up to 64.1%. In addition, the effect of hydrogen on the low-temperature growth of nc-Si:H film was proposed in relation to the surface reaction of radicals and the hydrogen diffusion in the surface growing region. [Copyright &y& Elsevier]

Abstract: Tensile and fatigue tests of ultrathin Cu films were conducted using a micro-force testing system. Fatigue strength as a function of film thickness was measured under the constant total strain range control at a frequency of 10Hz. The experimental results exhibit that both yield strength and fatigue lifetime are dependent on film thickness. Fatigue damage behavior in the 100nm thick Cu films with nanometer-sized grains is different from that in the micrometer-thick Cu films with large grains observed before. A comparison of the present results with those reported in literatures is conducted. Possible fatigue strengthening mechanism in the ultrathin Cu films is discussed. [Copyright &y& Elsevier]

Abstract: Zinc oxide (ZnO) thin films were prepared by a sol–gel dip coating process. The present work focuses on the crystallization behavior of these films during heating. In particular, the cases of (a) change of heating temperature and (b) change of heating time are studied. The characterization of the films by various analytical methods shows a correlation between heating temperature and film structure. At lower heating temperatures, granular structure dominates the films, while the films feature a columnar grain growth at higher-heating temperatures. The transition from granular to columnar structure is studied by the variation of heating times at a fixed-heating temperature. The evolution mechanism of the microstructure has been discussed in terms of continuous growth of the grains aided by an enhanced diffusion process. [Copyright &y& Elsevier]

Abstract: The mechanism of oxidation protection of NiCoCrAlY overlay coatings on the orthorhombic Ti2AlNb-based alloy (O alloy) Ti–22Al–26Nb (at.%) is described. While the bare alloy exhibited poor oxidation resistance at 800°C, adding NiCoCrAlY coatings significantly improved the oxidation resistance. However, serious interdiffusion between the coatings and the substrate resulted in rapid degradation of the coating system. Several reaction layers were formed at the coating/substrate interface by interdiffusion, and non-protective scales mainly of Cr2O3 and TiO2 were formed due to the degradation of the coating. In order to solve this problem, an Al2O3/Al interlayer was sandwiched into the coating system as a diffusion barrier. The isothermal and cyclic oxidation protection of the multilayer coating system on the Ti–22Al–26Nb substrate was evaluated at 800 and 900°C. The results indicated that the interdiffusion was much suppressed, and the duplex coating system demonstrated improved oxidation resistance on the Ti–22Al–26Nb substrate, with a thin and adherent protective α-Al2O3 scale forming on the surface. [Copyright &y& Elsevier]

Abstract: A new method is applied to measure the fracture strength of a ceramic film on a substrate by in situ X-ray stress analysis combined with micro-tensile test. As an example, a TiN film was deposited on a steel substrate by multi-arc ion plating (MAIP). During the tensile test, the stresses in the loading and transverse directions of the TiN film were determined by an in situ X-ray stress analysis method, and the applied external strain of the film was measured by a strain gauge. According to the new analytical method described in this paper, the fracture strength of the TiN film can be determined directly, and the value is 7.01 GPa. After comparing the results of another TiN film deposited by plasma-assisted chemical vapor deposition (PACVD), which was previously studied by the authors, with those in this study, the influence of deposition technique on the plastic deformation ability of TiN films is also discussed. [Copyright &y& Elsevier]

Abstract: In this paper, we report different methods to reduce the sheet resistance of ZnO:Al (AZO) films on flexible substrates without degrading the optical transmittance in the visible range. Under proper bias, AZO films deposited on Al2O3-buffered flexible substrates showed a significant decrease of sheet resistance when compared with those deposited on bare polymer. The films with resistivity as low as 8.4×10−4 Ω cm and the optical transmittance about 80% have been obtained by improved methods. By calculating the Al doping efficiency and the mean free path of electrons, ionized impurity scattering was considered to be the dominant factor for the transport mechanism of carriers. [Copyright &y& Elsevier]

Abstract: NiCoCrAlYSiB coatings were obtained using an arc ion plating technique on a directionally solidified Ni-base superalloy. Thermal shock resistance of the bare and coated specimens were investigated by cycling between high temperature (900, 1000 and 1050°C) and room temperature (forced water quenching). The experienced attack during thermal shock cycling was studied by gravimetry, XRD, SEM and EDS. The results showed that bare alloys and coated specimens experienced aggravating oxidation under thermal shock cycling conditions. The coated specimens exhibited excellent thermal shock resistance and provided enough protective effect on the superalloys under thermal shock cycling conditions. The accelerated oxidation mechanism and crack formation and propagation in the coatings were also investigated. The accelerated oxidation can be attributed to the accelerating oxide formation and breakdown due to compressive stresses accumulation in the oxides due to oxide growth at high temperature and thermal mismatch during cooling. The formation and propagation of cracks formed in coatings can be attributed to tensile stresses in oxides generated by irreversible cyclic creep accumulation in the metallic coatings and the “wedging” effect of oxide protruded into the coatings. [Copyright &y& Elsevier]

Nitrogen doped diamond-like carbon films were deposited on Si (1 0 0) substrates by arc ion plating (AIP) technique under different N2 volume percentage in the gas mixture of Ar and N2. The deposited films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Raman spectra indicate that the ID/IG ratio increases with increasing the N2 volume percentage. XPS analysis shows a strong influence of the N2 volume percentage on the N atom concentration and the chemical bonding states in the deposited films. Nitrogen content of the deposited films increased with the increasing of N2 volume percentage. The maximum N concentration and N/C atomic ratio are up to 12.7 at.% and 0.162 at the 90 vol.% N2, respectively. From decomposition of XPS C 1s peaks, it shows that the nitrogen doped diamond-like carbon films consist of amorphous carbon–carbon bonding (sp2C—C and sp3C—C), N atoms bonded to sp3-hybridized C atoms (sp3C—N) and N atoms bonded to sp2-hybridized C atoms (sp2C—N). The total content of sp3 bonding decreases with increasing N2 volume percentage. XPS N 1s spectra show that there exist the N—sp2C and N—sp3C bonding in the deposited nitrogen doped diamond-like carbon films. As the N2 volume percentage increases, the N—sp3C bonding content increases, but the N—sp2C bonding content decreases. [Copyright &y& Elsevier]

NiCrAlY/YPSZ and NiCrAlY/NiAl/YPSZ thermal barrier coatings (TBCs) were successfully deposited by detonation spraying. The results indicated that the detonation sprayed TBCs included a uniform ceramic coat containing a few microcracks and a bond coat with a rough surface. The lamellar structure and the presence of cracks and impurities could reduce the thermal conductivity of the ceramic coat. Oxidation kinetics at 1000–1150 °C of detonation sprayed TBCs have been measured and discussed. The role of a Ni–Al intermediate layer in improving the oxidation resistance of duplex TBCs has also been studied. [Copyright &y& Elsevier]

Chromium oxide (Cr2O3) films were deposited on stainless steel substrate by arc ion plating (AIP) technique. The results show that the flow rate of oxygen and bias voltage affected the microstructure, surface morphology and chemical composition of Cr2O3 films. The hardness of stoichiometric Cr2O3 film obtained at flow oxygen rate of 130 sccm and a bias voltage of −200 V reaches a maximum value of 36 GPa, much higher than that of films obtained by other deposition methods. [Copyright &y& Elsevier]

• The magnetic properties and Gilbert damping constant α of NiFe films grown on different substrates at different sputtering temperatures were investigated. • With increasing the sputtering temperature, the NiFe gradually changed from amorphous to crystalline, and the chemical ordering increased. • The damping constant exhibited a slight decrease with increasing the mismatch strain. The magnetic properties and Gilbert damping constant α of NiFe films grown on different substrates at different sputtering temperatures were investigated. NiFe films with low Gilbert damping constant α of 0.0046 (TiN) and 0.0055 (MgO) at 500°C were obtained. It is found that the crystal structure and lattice mismatch strongly affected the Gilbert damping constant α. With increasing the sputtering temperature, the NiFe gradually changed from amorphous to crystalline, thus the chemical ordering increased, which would cause the decrease of the density of states at Fermi level (D (E F)) and the Gilbert damping constant α. Moreover, the damping constant exhibited a slight decrease with increasing the mismatch strain, which would be further proven by the spin resolved density of states for the NiFe films. This study may offer a fabrication method of the NiFe films with small damping constant α in the applications of the STT-MRAM device's area. [ABSTRACT FROM AUTHOR]