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Environmentally-friendly bio-organic materials have become the centre of recent developments in organic electronics, while a suitable interfacial modification is a prerequisite for future applications. In the context of researches on low cost and biodegradable resource for optoelectronics applications, the influence of a 2D nanostructured transparent conductive electrode on the morphological, structural, optical and electrical properties of nucleobases (adenine, guanine, cytosine, thymine and uracil) thin films obtained by thermal evaporation was analysed. The 2D array of nanostructures has been developed in a polymeric layer on glass substrate using a high throughput and low cost technique, UV-Nanoimprint Lithography. The indium tin oxide electrode was grown on both nanostructured and flat substrate and the properties of the heterostructures built on these two types of electrodes were analysed by comparison. We report that the organic-electrode interface modification by nano-patterning affects both the optical (transmission and emission) properties by multiple reflections on the walls of nanostructures and the electrical properties by the effect on the organic/electrode contact area and charge carrier pathway through electrodes. These results encourage the potential application of the nucleobases thin films deposited on nanostructured conductive electrode in green optoelectronic devices. [ABSTRACT FROM AUTHOR]

We demonstrated that doping or covering with Au nanoclusters boosts gas sensing effectiveness of optical metal oxide sensors. The sensing response of pulsed laser deposited ZnO films as sensing element was tested by m-line technique for low concentration (1000 ppm) of butane in environmental N2. The optical interrogation was performed for three types of coatings: undoped ZnO, undoped ZnO structures partially covered with Au nanoclusters, or obtained from Au (0.5 wt %) doped ZnO targets. Nanocluster coating tripled the sensitivity, while doping resulted in an increase of up to 45% as compared with simple structures. [ABSTRACT FROM AUTHOR]

The structure, chemical composition, and optical properties of tungsten trioxide thin films grown by pulsed laser deposition were investigated. An ultraviolet KrF* excimer laser (λ=248 nm, τFWHM≅20 ns, ν=2 Hz) was used for irradiation of tungsten trioxide targets in oxygen atmosphere. Our research focused on the effect of the ambient gas pressure and substrate temperature on the chemical composition, crystalline status, and optical properties of the obtained thin films. To this end, the films were studied by x-ray diffractometry Raman spectroscopy, and energy dispersive x-ray spectroscopy. Optical transmittance measurements were performed with a double beam spectrometer within the 400–1200 nm range. The films deposited at oxygen pressure values higher than 10 Pa and substrate temperatures above 300 °C consist of crystalline tungsten trioxide. Their average transmittance in the visible-infrared spectral region reaches about 85% appropriate for the envisaged applications. [ABSTRACT FROM AUTHOR]

In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10 Ω) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq). [ABSTRACT FROM AUTHOR]

We have investigated the effect of thermal annealing on the structure of single and stacked phase change memory films based on SnSe and GaSb. Samples were prepared by pulsed laser deposition and investigated by X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD) methods. Electrical resistance versus temperature investigations showed crystallisation temperatures of 292°C and 198°C for SnSe and GaSb single films, respectively. Above the transition temperature, GaSb crystallises into a face-centered cubic structure, whereas SnSe has an orthorhombic arrangement. Annealing at three temperatures (160°C, 250°C and 350°C) of the SnSe\GaSb stacked films promotes bond breaking, atom diffusion between the two layers and formation of new phases. At 160°C, GaSb films crystallise partially and no effect is observed on the crystallinity of SnSe films. After 250°C, rhombohedral SnSb emerges in addition to GaSb complete crystallisation. A major, completely new, body-centered orthorhombic unindexed quaternary Ga-Sn-Sb-Se phase formation was observed in the samples annealed at 350°C. The GaSb crystallites are fully dissolved and we have observed the formation of a minor hexagonal SnSe2 phase. The analysis of EXAFS data, measured at Se and Ga K-edges, revealed changes in the local atomic environment as a function of the annealing temperature. A tetrahedral configuration is obtained for the Ga atoms in both as-deposited and annealed samples, whereas Se is mostly bivalent in the amorphous samples and has an octahedral arrangement in crystalline SnSe. Our results show that inter-layer diffusion should always be considered and evaluated when designing memory cells composed of stacked phase change chalcogenide films. [ABSTRACT FROM AUTHOR]

Thin amorphous films based on gallium-chalcogen (Ga-Ch), namely Ga2S3, Ga2Se3, Ga2Te3, and GaTe have been prepared by pulsed laser deposition (PLD). The films were characterized by X-ray diffraction, extended X-ray absorption fine structure (EXAFS), energy-dispersive X-ray spectroscopy (EDX), optical transmission spectroscopy, ellipsometry, and electrical measurements. Structural measurements showed that Ga is threefold coordinated, except the Te-based alloys were, it seems, only twofold coordinated, while the chalcogen is usually twofold coordinated. In all the compositions, layered and chain-like structures are assumed. The bandgaps range between 1.09 eV for Ga2Te3 and 2.21 eV for Ga2Se3. [ABSTRACT FROM AUTHOR]

Thin ZrC films (<500 nm), grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser, were irradiated by 800 keV Ar ion at room temperature under a fixed flux of 10 11 cm 2 s −1 with fluences ranging from 1 × 10 14 at/cm 2 to 2 × 10 15 at/cm 2 . Glancing incidence X-ray diffraction, X-ray reflectivity, transmission electron microscopy and nanoindentation investigations were used to study the structural modifications in the films' density, composition and mechanical properties induced by irradiation. After irradiation, the lattice parameter and crystallite size slightly increased, while the films' density decreased. Significant decreases in nanohardness and Young modulus values were also measured after irradiation at 1 × 10 14 at/cm 2 and 1 × 10 15 at/cm 2 fluences. No further major decreases were observed for a fluence of 2 × 10 15 at/cm 2 . Scanning transmission electron microscopy and energy dispersive X-ray analysis showed a decrease in the Zr/C values in the irradiated film from surface towards the Si substrate. [ABSTRACT FROM AUTHOR]

The use of amorphous and transparent oxides is a key for the development of new thin film transistors and displays. Recently, indium zinc oxide (IZO) was shown to exhibit high transparency in the visible range, low resistivity, and high mobility. Since the properties and the cost of these films depend on the In/(In + Zn) values, the measurement of this ratio is paramount for future developments and applications. We report on accurate analysis of the elemental composition of IZO thin films synthesized using a Combinatorial Pulsed Laser Deposition technique. The monitoring of the thin films elemental composition by Laser-Induced Breakdown Spectroscopy was chosen in view of further in situ and real-time technological developments and process control during IZO fabrication. Our analytical approach is based on plasma modeling, the recorded spectra being then compared to the spectral radiance computed for plasmas in local thermal equilibrium. The cation fractions measured were compared to values obtained by complementary measurements using energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. Spectroscopic ellipsometry assisted the scientific discussion. A good agreement between methods was found, independently of the relative fraction of indium and zinc that varied from about 65 to 90 and 35 to 10 at%, respectively, and the measurement uncertainties associated to each analytical method. [ABSTRACT FROM AUTHOR]

Highlights: [•] ZrC and ZrN films were grown by pulsed laser deposition on Si wafers at 500°C. [•] AES investigations results indicated that films contain less than 2% O in bulk. [•] Uniaxial reciprocating sliding tests found a friction coefficient of around 0.3 and a wear rate of only 4.5×10−6 mm3/Nm for the ZrN films. [ABSTRACT FROM AUTHOR]

Highlights: [•] TiN and ZrN films were grown by pulsed laser deposition. [•] XPS results indicated that films contain C atoms bonded into metallic carbide. [•] Films containing carbon exhibited higher hardness values. [Copyright &y& Elsevier]

Abstract: The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (In Ga Zn1−x O1+0.5x−δ ) with various (In+Ga)/(In+Ga+Zn) and Ga/(In+Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration. [Copyright &y& Elsevier]

Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5×10−4 Ωcm. In addition to these excellent electrical and optical characteristics the films grown at 8cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications. [Copyright &y& Elsevier]

Abstract: The paper presents the optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films with various In/(In+Zn) ratios obtained by Pulsed Laser Deposition. Thickness results obtained from simulations of X-ray Reflectivity and Spectroscopic Ellipsometry data were very similar. The dependence of density on stoichiometry resembles the corresponding dependence of the refractive index in the transparency range. A free carrier absorption was noted in the visible spectral range, leading to a weak absorbing thin transparent conductive oxide. On the other hand, the refractive index is smaller than those of based oxides (ZnO and In2 O 3), and counterbalance therefore the weak light absorption. [Copyright &y& Elsevier]

Abstract: Indium zinc oxide films were grown from targets with two different In atomic concentration [In/(In+Zn)] of 40% and 80% by the pulsed laser deposition technique on glass substrates from room temperature up to 100°C. X-ray diffraction and reflectometry investigations showed that films were amorphous and dense. Thin films (thickness<100nm) exhibited higher optical transmittance and resistivities than thick films (thickness>1000nm), probably caused by a significant decrease of oxygen vacancies due to atmosphere exposure. Films deposited from the In rich target under an oxygen pressure of 1Pa exhibited optical transmittance higher than 85%, resistivities around 5–7×10−4 Ωcm and mobilities in the 47–54cm2/Vs range. [Copyright &y& Elsevier]

Thin arsenic-selenium-antimony films (AsSe)Sb ( x=0,5,10,15 mol.%) have been deposited on glass substrates by vacuum thermal evaporation (VTE) and pulsed laser deposition (PLD) techniques from the corresponding bulk glassy materials. The refractive index and the film thickness have been determined from the optical transmission spectra by modified Swanepoel method. The optical band gap calculated using the Tauc's approximation showed a narrowing as a function of the increased Sb content from 1.74 eV to 1.53 eV in the VTE films and from 1.64 eV to 1.42 eV in the PLD films. The refractive index of the Sb-doped films strongly increased with the Sb content and reached the largest value for the PLD films. The results verify that both techniques are suitable for deposition of thin glassy films with high optical quality. [ABSTRACT FROM AUTHOR]

Indium Zinc Oxide compositional libraries were fabricated by combinatorial pulsed laser deposition technique on glass substrate at room temperature. Two pairs of targets with In atomic concentrations, In/(In+Zn), of 28 at.% and 56 at.% or 42 at.% and 70 at.% were employed. A high transparency was observed for all the coatings with transmittance values better than 95%. The maximum thicknesses of the samples, inferred by spectroscopic ellipsometry, were within the 174-310 nm range for the simple PLD films, whereas in case of combinatorial PLD coatings were 341 or 467 nm. Energy dispersive X-ray spectroscopy revealed that In content in the combinatorial films was in the 27-52 at. % range. From atomic force microscopy histograms we evidenced a decrease of the RMS roughness down to 1 nm with the increase of the In content. As a result of the compositional library studies two minimum values of the electrical resistivity were identified at 2.3×10-3 Ω·cm and 8.6 ×10-4 Ω·cm, which correspond to 28.8-29.5 at.% and 44-49 at% range of Indium content. [ABSTRACT FROM AUTHOR]

Abstract: Functionalized implants represent an advanced approaching in implantology, aiming to improve the biointegration and the long-term success of surgical procedures. We report on the synthesis of hydroxyapatite (HA) thin films on polymethylmetacrylate (PMMA) substrates – used as cranio-spinal implant-type structures – by two alternative methods: pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (MS). The deposition parameters were optimized in order to avoid the substrate overheating. Stoichiometric HA structures were obtained by PLD with incident laser fluences of 1.4–2.75J/cm2, pressures of 30–46.66Pa and 10Hz pulses repetition rate. The MS depositions were performed at constant pressure of 0.3Pa in inert and reactive atmospheres. SEM-EDS, XRD, FTIR and pull-out measurements were performed assessing the apatitic-type structure of the prepared films along with their satisfactory mechanical adhesion. Cell viability, proliferation and adhesion tests in osteosarcoma SaOs2 cell cultures were performed to validate the bioactive behaviour of the structures and to select the most favourable deposition regimes. For PLD, this requires a low fluence of 1.4J/cm2, reduced pressure of water vapours and a 100°C/4h thermal treatment. For MS, the best results were obtained for 80% Ar+20% O2 reactive atmosphere at low RF power (∼75W). Cells grown on these coatings exhibit behaviour similar to those grown on the standard borosilicate glass control: increased viability, good proliferation, and optimal cell adhesion. In vitro tests proved that HA/PMMA neurosurgical structures prepared by PLD and MS are compatible for the interaction with human bone cells. [Copyright &y& Elsevier]

Abstract: The aim of this study was to obtain biomimetic inorganic–organic thin films as coatings for metallic medical implants. These contain hydroxyapatite, the inorganic component of the bony tissues, and a natural biopolymer – silk fibroin – added in view to induce the surface functionalization. Hydroxyapatite (HA), silk fibroin (FIB) and composite HA–FIB films were obtained by Matrix Assisted Pulsed Laser Evaporation (MAPLE) in order to compare their physical and biological performances as coatings on metallic prostheses. We used an excimer laser source (KrF*, λ =248nm, τ =25ns) operated at 10Hz repetition rate. Coatings were deposited on quartz, Si and Ti substrates and then subjected to physical (FTIR, XRD, AFM, SEM) analyses, correlated with the results of the cytocompatibility in vitro tests. The hybrid films were synthesized from frozen targets of aqueous suspensions with 3:2 or 3:4 weight ratio of HA:FIB. An appropriate stoichiometric and functional transfer was obtained for 0.4–0.5J/cm2 laser fluence. FTIR spectra of FIB and HA–FIB films exhibited distinctive absorption maxima, in specific positions of FIB random coil form: 1540cm−1 amide II, 1654cm−1 amide I, 1243cm−1 amide III, while the peak from 1027cm−1 appeared only for HA and composite films. Osteosarcoma SaOs2 cells cultured 72h on FIB and HA–FIB films showed increased viability, good spreading and normal cell morphology. The well-elongated, flattened cells are a sign of an appropriate interaction with the MAPLE FIB and composite HA–FIB coatings. [Copyright &y& Elsevier]

This paper presents a study of two monomeric structures containing functional groups with different electronegativities [NH/NH-NH and NO2] and two different polymeric structures prepared by the copolymerisation of maleic anhydride and methylmethacrylate/maleic anhydride and vinyl benzyl chloride, and subsequent functionalization with 2,4 dinitroaniline. Thin films have been prepared by Matrix Assisted Pulsed Laser Evaporation (MAPLE) and UV-VIS, FTIR, Raman and Photoluminescence Spectroscopy have been used to comparatively investigate the properties of the synthesised compounds. We have evidenced the second harmonic emission (SHG), process sustained by the asymmetry of the chemical structure, which is correlated with the crystallization in non-centrosymmeric structures. [ABSTRACT FROM AUTHOR]

Abstract: ZrC films were grown on (100) Si substrates by the pulsed laser deposition (PLD) technique using a KrF excimer laser working at 40Hz. The nominal substrate temperature during depositions was set at 300°C and the cooling rate was 5°C/min. X-ray diffraction investigations showed that films deposited under residual vacuum or under 2×10−3 Pa of CH4 atmosphere were crystalline, exhibiting a (200)-axis texture, while those deposited under 2×10−2 Pa of CH4 atmosphere were found to be equiaxed and with smaller grain size. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed the usual high oxygen contamination of carbides. Once the topmost 2–4nm region was removed, the oxygen concentration rapidly decreased, down to around 3–8% only in bulk. Simulations of the X-ray reflectivity (XRR) curves indicated a smooth surface morphology, with roughness values below 1nm (rms) and films density values of around 6.30–6.45g/cm3, very close to the bulk density. The growth rate, estimated from thickness measurements by XRR was around 8.25nm/min. Nanoindentation results showed for the best quality ZrC films a hardness of 27.6GPa and a reduced modulus of 228GPa. [Copyright &y& Elsevier]

Abstract: ZrC thin films were grown on (100) Si substrates by the pulsed laser deposition (PLD) technique using a high-repetition rate excimer laser working at 40 Hz. The substrate temperature during depositions was set at 300 °C and the cooling rate was 5 °C/min. X-ray diffraction investigations showed that the films were crystalline. Films deposited under residual vacuum or 2×10−3 Pa of CH4 atmosphere exhibited a (200)-axis texture, while those deposited under 2×10−2 Pa of CH4 atmosphere were found to be equiaxed. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES), showed the usual high oxygen contamination of carbides. Once the topmost −3–5 nm region was removed, the oxygen concentration rapidly decreased, being around 3–4% only in bulk. Scanning electron microscopy (SEM) investigations showed a smooth, featureless surface morphology, corroborating the roughness values below 1 nm (rms) obtained from simulations of the X-ray reflectivity (XRR) curves. From the same simulations we also estimated films mass density values of around 6.32–6.57 g/cm3 and thicknesses that correspond to a deposition rate of around 8.25 nm/min. Nanoindentation results showed a hardness of 27.6 GPa and a reduced modulus of 228 GPa for the best quality ZrC films deposited under an atmosphere of 2×10−3 Pa CH4. [Copyright &y& Elsevier]

Abstract: The extension of pulsed laser deposition to the synthesis on Ti substrates of β-tricalcium phosphate (β-TCP) coatings doped with manganese is reported. Targets sintered from two crystalline Mn-doped β-TCP powders (with the composition Ca2.9Mn0.1(PO4)2 and Ca2.8Mn0.2(PO4)2) were ablated with an UV KrF* (λ =248nm, τ ∼7ns) laser source. X-ray diffraction and energy dispersive X-ray spectroscopy investigations showed that the films, while prevalently amorphous, had a Ca/P ratio of about 1.50–1.52. Scanning electron microscopy analyses revealed a rather homogeneous aspect of the coatings which were molded to the relief of the chemically etched Ti substrate. Fluorescence microscopy was applied to test the proliferation of mesenchymal stem cells grown on the obtained biostructures. Our investigations found that, even 14 days after cultivation, the synthesized films were not cytotoxic. On the contrary, they showed excellent bioactivity, as demonstrated by the neat spread of the cells over the entire surface of Mn-doped β-TCP. When tested in osteoprogenitor cell culture, the Ca2.8Mn0.2(PO4)2 samples revealed a higher potential for proliferation and better viability compared with Ca2.9Mn0.1(PO4)2. [Copyright &y& Elsevier]

Abstract: Anatase phase titanium dioxide (TiO2) thin films were grown by pulsed laser deposition on 〈001〉 SiO2 substrates. An UV KrF* (λ =248nm, τ FWHM ≅20ns, ν =2Hz) excimer laser was used for the irradiation of the TiO2 targets. The substrates were kept at room temperature or heated during the film deposition at values within the 100–500°C range. The crystalline quality of the films and their chemical composition were investigated by X-ray diffractometry and energy dispersive X-ray spectroscopy. The optical properties were studied by a double beam spectrophotometer in the spectral range of 400–1200nm. At substrate temperatures higher than 300°C, the structure of the deposited thin films changes from poorly to well crystallised, corresponding to the tetragonal TiO2 anatase phase. The average optical transmittance in the visible-infrared spectral range of the films is higher than 85% which makes them suitable for sensor applications. [Copyright &y& Elsevier]

Abstract: Chromium dioxide is a very suitable compound for spintronic devices. It is ferromagnetic at room temperature (T c =395K) and has a half-metallic band structure. CrO2 has been theoretically predicted to be100% spin polarized at the Fermi level. For some applications in spintronics low deposition temperatures are required. However, the fabrication of single phase thin films of CrO2 at low temperature is quite difficult due to its metastable character. In this work we report our experiments to deposit thin films of chromium oxides by reactive pulsed laser deposition (RPLD). RPLD experiments were performed with a UV KrF* excimer laser source (τ FWHM ≥20ns, λ =248nm) in different conditions regarding the target, the substrate temperature, the atmosphere inside the deposition chamber and the laser fluence. In order to prevent the reduction of CrO2 to Cr2O3 in thin films preserved in ambient conditions some of the samples were capped with gold in situ using the same set-up. The composition and morphology of the deposited films were characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. A higher and stable content of CrO2 in the deposited films was evidenced in the case of samples capped with Au. Subsequent analysis performed after 4 months showed no difference in the content of the film. [Copyright &y& Elsevier]

We report on the successful deposition of high quality type I fibrilar collagen thin films by Matrix assisted pulsed laser evaporation (MAPLE). Thin films deposition was performed in a N2 ambient (20 Pa) using a KrF* laser source (λ=248 nm,τ≥20 ns) operated at a repetition rate of 3 Hz, the incident laser energy at a value within the range (20-35) mJ , and the laser spot area was (3.5-18.5)±0.1 mm2. The collagen films were deposited on double face polished <100> single crystalline Si wafers and characterized by Fourier transform infrared spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy. We demonstrate that our thin films are composed of collagen, with no impurities and the roughness can be controlled by the deposition conditions. [ABSTRACT FROM AUTHOR]

Thin organic films based on poly-methyl-methacrylate (PMMA) polymer have been obtained by pulsed laser deposition (PLD) on silicon substrates. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy (RS). We observed that the film composition and structure depend on the laser fluence and on the temperature of the substrate during deposition. [Copyright &y& Elsevier]

Hydroxyapatite (HAp) is one of the most widely studied materials for utilization in the development of artificial implants. Research is mainly aimed at the production and modification of HAp coatings for simplification of the deposition process, cost reduction, and increase in biocompatibility. In this paper, the authors deposited HAp synthetic microparticles by means of matrix-assisted pulsed laser evaporation (MAPLE) on Ti6Al4V alloy plate substrates and obtained uniform HAp coatings without further treatment or modifications. The authors utilized a tunable pulsed laser to adjust its wavelength to the selected solvents, in order to optimize the process for deposition speed and quality. The following solvents were used as matrices: deionized water, isopropyl alcohol, and a 3:2 mixture of isopropanol:acetonitrile. Obtained coatings were examined by means of scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and profilometry in order to evaluate coating quality, uniformity, and structural integrity. MAPLE deposition allowed the acquisition of approx. 200 nm thick coatings for water and isopropanol matrices and approx. 320 nm for isopropanol:acetonitrile matrix, which indicates an increase in deposition rate by 37%. The obtained coatings meet requirements for further biocompatibility testing, material modification, and composite synthesis. [ABSTRACT FROM AUTHOR]

Nowadays, the development of devices based on organic materials is an interesting research challenge. The performance of such devices is strongly influenced by material selection, material properties, design, and the manufacturing process. Usually, buckminsterfullerene (C60) is employed as electron transport material in organic photovoltaic (OPV) devices due to its high mobility. However, considering its low solubility, there have been many attempts to replace it with more soluble non-fullerene compounds. In this study, bulk heterojunction thin films with various compositions of zinc phthalocyanine (ZnPc), a perylene diimide derivative, or C60 were prepared by matrix-assisted pulsed laser evaporation (MAPLE) technique to assess the influence of C60 replacement on fabricated heterostructure properties. The investigations revealed that the optical features and the electrical parameters of the organic heterostructures based on this perylene diimide derivative used as an organic acceptor were improved. An increase in the JSC value (4.3 × 10−4 A/cm2) was obtained for the structures where the perylene diimide derivative acceptor entirely replaced C60 compared to the JSC value (7.5 × 10−8 A/cm2) for the heterostructure fabricated only with fullerene. These results are encouraging, demonstrating the potential of non-fullerene compounds as electron transport material in OPV devices. [ABSTRACT FROM AUTHOR]

Fabrication aspects of PdO thin films and coatings are reviewed here. The work provides and organizes the up-to-date information on the methods to obtain the films. In recent years, the interest in Pd oxide for different applications has increased. Since Pd can be converted into PdO, it is instructive to pay attention to the preparation of the pure and the alloyed Pd films, heterostructures, and nanoparticles synthesized on different substrates. The development of PdO films is presented from the early reports on coatings' formation by oxidation of Pd foils and wires to present technologies. Modern synthesis/growth routes are gathered into chemical and physical categories. Chemical methods include hydrothermal, electrochemical, electroless deposition, and coating methods, such as impregnation, precipitation, screen printing, ink jet printing, spin or dip coating, chemical vapor deposition (CVD), and atomic layer deposition (ALD), while the physical ones include sputtering and cathodic arc deposition, laser ablation, ion or electron beam-induced deposition, evaporation, and supersonic cluster beam deposition. Analysis of publications indicates that many as-deposited Pd or Pd-oxide films are granular, with a high variety of morphologies and properties targeting very different applications, and they are grown on different substrates. We note that a comparative assessment of the challenges and quality among different films for a specific application is generally missing and, in some cases, it is difficult to make a distinction between a film and a randomly oriented, powder-like (granular), thin compact material. Textured or epitaxial films of Pd or PdO are rare and, if orientation is observed, in most cases, it is obtained accidentally. Some practical details and challenges of Pd oxidation toward PdO and some specific issues concerning application of films are also presented. [ABSTRACT FROM AUTHOR]

The structure, composition and corrosion properties of thin films synthesized using the Pulsed Laser Deposition (PLD) technique starting from a three high entropy alloy (HEA) AlCoCrFeNix produced by vacuum arc remelting (VAR) method were investigated. The depositions were performed at room temperature on Si and mirror-like polished Ti substrates either under residual vacuum (low 10−7 mbar, films denoted HEA2, HEA6, and HEA10, which were grown from targets with Ni concentration molar ratio, x, equal to 0.4, 1.2, and 2.0, respectively) or under N2 (10−4 mbar, films denoted HEN2, HEN6, and HEN10 for the same Ni concentration molar ratios). The deposited films' structures, investigated using Grazing Incidence X-ray Diffraction, showed the presence of face-centered cubic and body-centered cubic phases, while their surface morphology, investigated using scanning electron microscopy, exhibited a smooth surface with micrometer size droplets. The mass density and thickness were obtained from simulations of acquired X-ray reflectivity curves. The films' elemental composition, estimated using the energy dispersion X-ray spectroscopy, was quite close to that of the targets used. X-ray Photoelectron Spectroscopy investigation showed that films deposited under a N2 atmosphere contained several percentages of N atoms in metallic nitride compounds. The electrochemical behavior of films under simulated body fluid (SBF) conditions was investigated by Open Circuit Potential (OCP) and Electrochemical Impedance Spectroscopy measurements. The measured OCP values increased over time, implying that a passive layer was formed on the surface of the films. It was observed that all films started to passivate in SBF solution, with the HEN6 film exhibiting the highest increase. The highest repassivation potential was exhibited by the same film, implying that it had the highest stability range of all analyzed films. Impedance measurements indicated high corrosion resistance values for HEA2, HEA6, and HEN6 samples. Much lower resistances were found for HEN10 and HEN2. Overall, HEN6 films exhibited the best corrosion behavior among the investigated films. It was noticed that for 24 h of immersion in SBF solution, this film was also a physical barrier to the corrosion process, not only a chemical one. [ABSTRACT FROM AUTHOR]

This study investigates the morphological changes induced by femtosecond (fs) laser pulses in arsenic trisulfide (As2S3) thin films and gold–arsenic trisulfide (Au\As2S3) heterostructures, grown by pulsed laser deposition (PLD). By means of a direct laser writing experimental setup, the films were systematically irradiated at various laser power and irradiation times to observe their effects on surface modifications. AFM was employed for morphological and topological characterization. Our results reveal a clear transition threshold between photoexpansion and photoevaporation phenomena under different femtosecond laser power regimes, occurring between 1 and 1.5 mW, irrespective of exposure time. Notably, the presence of a gold layer in the heterostructure minimally influenced this threshold. A maximum photoexpansion of 5.2% was obtained in As2S3 films, while the Au\As2S3 heterostructure exhibited a peak photoexpansion of 0.8%. The study also includes a comparative analysis of continuous-wave (cw) laser irradiation, confirming the efficiency of fs laser pulses in inducing photoexpansion effects. [ABSTRACT FROM AUTHOR]

In many electro-optical devices, the conductive layer is an important key functional element. Among others, unique indium tin oxide (ITO) contacts take priority. ITO structure is widely used as the optical transparent and electrically conductive material in general optoelectronics, biosensors and electrochemistry. ITO is one of the key elements in the liquid crystal (LC) displays, spatial light modulators (SLMs) and LC convertors. It should be mentioned that not only the morphology of this layer structure but also the surface features play an important role in the study of the physical parameters of the ITO. In order to switch the surface properties (roughness, average tilt angle and surface free energy) of the ITO via the laser-oriented deposition (LOD) method, carbon nanotubes (CNTs) were implanted. In the LOD technique, the CO2 laser (λ = 10.6 μm, P = 30 W) with the control electric grid was used. The switching of the deposition conditions was provided via the varying electrical strength of the control grid in the range of 100–600 V/cm. The diagnostics of the surfaces were performed using AFM analysis and wetting angle measurements. The components of the surface free energy (SFE) were calculated using the OWRK method. The main experimental results are as follows: the roughness increases with a rise in the electric field strength during the deposition of the CNTs; the carbon nanotubes provide a higher level of the dispersive component of SFE (25.0–31.4 mJ/m2 against 22.2 mJ/m2 in the case of pure ITO); the CNTs allow an increase in the wetting angle of the 5CB liquid crystal drops from 38.35° to 58.95°. Due to the possibility of the switching properties of the ITO/CNT surfaces, these modifications have potential interest in microfluidics applications and are useful for the liquid crystal's electro-optics. [ABSTRACT FROM AUTHOR]

In this study, a sol-gel film based on lead sulfide (PbS) quantum dots incorporated into a host network was synthesized as a special nanostructured composite material with potential applications in temperature sensor systems. This work dealt with the optical, structural, and morphological properties of a representative PbS quantum dot (QD)-containing thin film belonging to the Al2O3–SiO2–P2O5 system. The film was prepared using the sol-gel method combined with the spin coating technique, starting from a precursor solution containing a suspension of PbS QDs in toluene with a narrow size distribution and coated on a glass substrate in a multilayer process, followed by annealing of each deposited layer. The size (approximately 10 nm) of the lead sulfide nanocrystallites was validated by XRD and by the quantum confinement effect based on the band gap value and by TEM results. The photoluminescence peak of 1505 nm was very close to that of the precursor PbS QD solution, which demonstrated that the synthesis route of the film preserved the optical emission characteristic of the PbS QDs. The photoluminescence of the lead sulfide QD-containing film in the near infrared domain demonstrates that this material is a promising candidate for future sensing applications in temperature monitoring. [ABSTRACT FROM AUTHOR]

We report a study related to the influence of heat treatment (up to 300 °C) on the structure of GaSb\GeTe, SnSe\GeTe and GaSb\SnSe stacked phase change memory films and of their counterparts with Hf thin film barrier between the layers. Samples were prepared by pulsed laser deposition and investigated by X-ray reflectometry and X-ray diffraction in order to evaluate the inter-films diffusion and the temperature threshold where this process is initiated. The thickness and mass density variations of films after each heat treatment, as well as the efficiency of hafnium barrier film, to eliminate potential atomic diffusion issues, were investigated. [ABSTRACT FROM AUTHOR]

The use of MAPLE synthesized thin films based on BG and VD3 for improving the osseointegration and corrosion protection of Ti-like implant surfaces is reported. The distribution of chemical elements and functional groups was shown by FTIR spectrometry; the stoichiometry and chemical functional integrity of thin films after MAPLE deposition was preserved, optimal results being revealed especially for the BG+VD3_025 samples. The morphology and topography were examined by SEM and AFM, and revealed surfaces with many irregularities, favoring a good adhesion of cells. The thin films' cytotoxicity and biocompatibility were evaluated in vitro at the morphological, biochemical, and molecular level. Following incubation with HDF cells, BG57+VD3_ 025 thin films showed the best degree of biocompatibility, as illustrated by the viability assay values. According to the LDH investigation, all tested samples had higher values compared to the unstimulated cells. The evaluation of cell morphology was performed by fluorescence microscopy following cultivation of HDF cells on the obtained thin films. The cultivation of HDF's on the thin films did not induce major cellular changes. Cells cultured on the BG57+VD3_025 sample had similar morphology to that of unstimulated control cells. The inflammatory profile of human cells cultured on thin films obtained by MAPLE was analyzed by the ELISA technique. It was observed that the thin films did not change the pro- and anti-inflammatory profile of the HDF cells, the IL-6 and IL-10 levels being similar to those of the control sample. The wettability of the MAPLE thin films was investigated by the sessile drop method. A contact angle of 54.65° was measured for the sample coated with BG57+VD3_025. Electrochemical impedance spectroscopy gave a valuable insight into the electrochemical reactions occurring on the surface. [ABSTRACT FROM AUTHOR]

Zirconium (Zr) thin films were deposited on silicon using pulsed laser deposition (PLD) with two laser wavelengths (1064 nm and 532 nm) and varying substrate temperatures (25 °C, 300 °C, and 500 °C) and laser fluences (0.25, 0.5, 1.0 J/cm2). Results indicate that smoother films were obtained with 1064 nm and surface roughness increased with higher fluences. Optimal crystalline films were obtained at 300 °C. XRD, SEM, and AFM analysis revealed distinct patterns and peaks related to laser parameters. The growth mechanisms of a Zr film were computed based on a well-known continuum model of thin film growth. Our simulations agree with experimental observations. The study highlights crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films. [ABSTRACT FROM AUTHOR]

This article aims to study the modification in the structural, optical and electrical properties of indium oxide thin film after gamma irradiation and estimation of sensitivity for gamma sensing applications. The thin film of indium oxide was deposited on a 450 °C preheated glass substrate using the spray pyrolysis technique. The deposited thin film of molar concentration 0.15 M and thickness of around 600 nm was irradiated with different gamma doses (100 Gy, 200 Gy, 300 Gy and 400 Gy). The optical properties of the irradiated film are studied using UV–Visible spectroscopy. Transmittance increased after irradiation up to 200 Gy and beyond that, it decreased. Indium oxide is an n-type semiconductor which exhibits both direct and indirect transitions. Both direct and indirect bandgap energy are calculated using Tauc's plot. Extinction coefficient and refractive index variation with irradiation were also estimated. Photoluminescence study confirmed the gamma-induced defect formation and annihilation for an irradiation dose of 400 Gy and 200 Gy, respectively. Resistivity also decreased up to 200 Gy and beyond that, it increased. The sensitivity of the deposited film was estimated from the electrical measurements, and it lies between 10.7 and 53.4 mA/cm2/Gy. [ABSTRACT FROM AUTHOR]

It is common knowledge that using different oxygen contents in the working gas during sputtering deposition results in fabrication of indium zinc oxide (IZO) films with a wide range of optoelectronic properties. It is also important that high deposition temperature is not required to achieve excellent transparent electrode quality in the IZO films. Modulation of the oxygen content in the working gas during RF sputtering of IZO ceramic targets was used to deposit IZO-based multilayers in which the ultrathin IZO unit layers with high electron mobility (μ-IZO) alternate with ones characterized by high concentration of free electrons (n-IZO). As a result of optimizing the thicknesses of each type of unit layer, low-temperature 400 nm thick IZO multilayers with excellent transparent electrode quality, indicated by the low sheet resistance (R ≤ 8 Ω/sq.) with high transmittance in the visible range ( T ¯ > 83%) and a very flat multilayer surface, were obtained. [ABSTRACT FROM AUTHOR]

TiO2–SiO2 nanocomposite thin films have gained the attention of the scientific community due to their unique physical and chemical properties. In this paper, we report on the fabrication and characterization of a TiO2–SiO2 nanocomposite disk-shaped target. The target was used for the deposition of TiO2–SiO2 nanocomposite thin films on fluorine-doped tin oxide/glass substrates using the pulsed laser deposition (PLD) technique. The thicknesses of the thin films were fixed to 100 nm, and the deposition temperature ranged from room temperature to 300 °C. As revealed by the microstructural and morphological characterizations revealed, the TiO2–SiO2 nanocomposite thin films are amorphous and display homogeneous distribution. The determined values of the indirect optical band gap range from 2.92 to 3.07 eV, while those of the direct optical band gap lie between 3.50 and 3.55 eV. Additionally, as the deposition temperature decreases, the light transmission increases in the visible and in the ultraviolet ranges, which is suitable for flexible perovskite solar cells. This research can uncover new insights into the fabrication of amorphous TiO2–SiO2-based nanostructured thin films using the PLD technique for perovskite solar cell technology. [ABSTRACT FROM AUTHOR]

This study is focused on the fabrication of thin films of hydroxypropyl methylcellulose (HPMC) and ethyl cellulose (EC) polymer blends impregnated with captopril via matrix assisted pulsed laser evaporation (MAPLE) for the design of transdermal patches. The laser engineered polymer blend: captopril films are evaluated for physicochemical characteristics such as film morphology, chemistry of the films surface, drug content, and in vivo animal irritancy and skin sensitivity studies. The morphological investigation of the MAPLE fabricated coatings, i.e., by atomic force microscopy reveals that the morphology and topography of the polymer: drug films may be tuned by adjusting the HPMC: EC ratio in the MAPLE target. In addition, by tuning the HPMC: EC ratio in the as-deposited MAPLE films, it is possible to adjust the drug release profile. The Fourier-transform infrared spectroscopy investigation showed no interaction between captopril and the polymers (HPMC: EC) used. The skin irritation studies carried out on rabbits, showed no noticeable skin reactions, thus pointing out the compatibility of captopril with both the polymer blend and with the skin. In addition, no skin sensitization was noted among the guinea pigs that were challenged with the MAPLE fabricated transdermal patches. To sum up, the application of matrix-assisted pulsed laser evaporation for the fabrication of hydrophilic: hydrophobic polymer blends shows that there is great potential for the development of transdermal drug delivery system of captopril. [ABSTRACT FROM AUTHOR]

Nanocomposite films based on macrocyclic compounds (zinc phthalocyanine (ZnPc) and 5,10,15,20-tetra(4-pyridyl) 21H,23H-porphyrin (TPyP)) and metal oxide nanoparticles (ZnO or CuO) were deposited by matrix-assisted pulsed laser evaporation (MAPLE). 1,4-dioxane was used as a solvent in the preparation of MAPLE targets that favor the deposition of films with a low roughness, which is a key feature for their integration in structures for optoelectronic applications. The influence of the addition of ZnO nanoparticles (~20 nm in size) or CuO nanoparticles (~5 nm in size) in the ZnPc:TPyP mixture and the impact of the added metal oxide amount on the properties of the obtained composite films were evaluated in comparison to a reference layer based only on an organic blend. Thus, in the case of nanocomposite films, the vibrational fingerprints of both organic compounds were identified in the infrared spectra, their specific strong absorption bands were observed in the UV–Vis spectra, and a quenching of the TPyP emission band was visible in the photoluminescence spectra. The morphological analysis evidenced agglomerated particles on the composite film surface, but their presence has no significant impact on the roughness of the MAPLE deposited layers. The current density–voltage (J-V) characteristics of the structures based on the nanocomposite films deposited by MAPLE revealed the critical role played by the layer composition and component ratio, an improvement in the electrical parameters values being achieved only for the films with a certain type and optimum amount of metal oxide nanoparticles. [ABSTRACT FROM AUTHOR]

After (In1−xGdx)2O3 powder with a wide x range of 0 to 10 at.% was chemically produced, (In1−xGdx)2O3 thin films were evaporated under ultra-vacuum using an electron beam apparatus. We investigated the influence of the Gd doping concentration on the magnetic, optical, electrical, and structural properties of the resultant In2O3 deposits. The produced Gd-doped In2O3 films have a cubic In2O3 structure without a secondary phase, as shown by the X-ray diffraction results. Additionally, the chemical analysis revealed that the films are nearly stoichiometric. A three-layer model reproduced the spectroscopic ellipsometer readings to determine the optical parameters and energy gap. The E g o p t changed toward the lower wavelength with growing the Gd doping in (In1−xGdx)2O3 films. The E g o p t in the (In1−xGdx)2O3 films was observed to increase from 3.22 to 3.45 eV when the Gd concentration climbed. Both carrier concentration and hall mobility were found during the Hall effect studies. It was possible to construct the heterojunction of Ni (Al)/n-(In1−xGdx)2O3/p-Si/Al. At voltages between −2 and 2 volts, investigations into the dark (cutting-edge-voltage) characteristics of the produced heterojunctions were made. The oxygen vacancies and cationic defects in the lattice caused by the uncompensated cationic charges resulted in significant magnetism and ferromagnetic behavior in the undoped In2O3 films. The (In1−xGdx)2O3 films, however, displayed faint ferromagnetism. The ferromagnetism seen in the (In1−xGdx)2O3 films was caused by oxygen vacancies formed during the vacuum film production process. Metal cations created ferromagnetic exchange interactions by snatching free electrons in oxygen. [ABSTRACT FROM AUTHOR]

The purpose of this study was to investigate the interactions between microorganisms, including the planktonic and adherent organisms, and biopolymer (polyvinylpyrrolidone), flavonoid (quercetin dihydrate and resveratrol)-biopolymer, and silver nanoparticles-biopolymer composite thin films that were deposited using matrix assisted pulsed laser evaporation (MAPLE). A pulsed KrF * excimer laser source was used to deposit the aforementioned composite thin films, which were characterized using Fourier transform infrared spectroscopy (FT-IR), infrared microscopy (IRM), scanning electron microscopy (SEM), Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The antimicrobial activity of thin films was quantified using an adapted disk diffusion assay against Gram-positive and Gram-negative bacteria strains. FT-IR, AFM and SEM studies confirmed that MAPLE may be used to fabricate thin films with chemical properties corresponding to the input materials as well as surface properties that are appropriate for medical use. The silver nanoparticles and flavonoid-containing films exhibited an antimicrobial activity both against Gram-positive and Gram-negative bacterial strains demonstrating the potential use of these hybrid systems for the development of novel antimicrobial strategies. [ABSTRACT FROM AUTHOR]

The effects of 800 keV Ar ion irradiation on thin nanocrystalline SiC films grown on (100) Si substrates using the pulsed laser deposition (PLD) technique were investigated. On such PLD grown films, which were very dense, flat and smooth, X-ray reflectivity, glancing incidence X-ray diffraction and nanoindentation investigations were easily performed to evaluate changes induced by irradiation on the density, surface roughness, crystalline structure, and mechanical properties. Results indicated that the SiC films retained their crystalline nature, the cubic phase partially transforming into the hexagonal phase, which had a slightly higher lattice parameter then the as-deposited films. Simulations of X-ray reflectivity curves indicated a 3% decrease of the films density after irradiation. Nanoindentation results showed a significant decrease of the hardness and Young's modulus values with respect to those measured on as-deposited films. Raman and X-ray photoelectron spectroscopy investigations found an increase of the C C bonds and a corresponding decrease of the Si C bonds in the irradiated area, which could explain the degradation of mechanical properties. [ABSTRACT FROM AUTHOR]

In this research work, ITO thin film with 100 nm thickness was produced on a glass slide substrate by using the Thermionic Vacuum Arc (TVA) technique. After the deposition process, ITO thin film was annealed at 300, 400, and 480 °C in O2 ambient for 1 h. The effect of annealing temperatures on the optical, structural, and surface properties of the ITO thin film was investigated. Changes in the annealed ITO thin film characteristics were observed. The XRD results analysis showed a crystallization of the ITO thin films along (222) and (440) diffraction peaks after the annealing process. The band gap energy for the as-deposited ITO thin film was estimated as 3.82 eV, which increased from 3.96 to 4.11 eV for the annealed ITO thin films. The FESEM and AFM images of ITO thin films show a homogenous deposition, smooth, granular, and dense form. The CA mean of the as-deposited and annealed ITO thin films was measured in the range of 88°–33°. The experimental results showed that different annealing temperatures influenced the structural, optical, surface morphology and wettability properties of the ITO thin films. [ABSTRACT FROM AUTHOR]