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Abstract: AlN thin films with different orientation degrees, i.e., (0002) textured, (0002) textured with traces of non-(0002) components, and randomly oriented, were deposited by radio frequency magnetron sputtering. The films were comprehensively characterized using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The dependence of orientation degree on the nitrogen partial pressure during the deposition processes was revealed. Based on microstructural analysis with high-resolution transmission electron microscopy and photoluminescence measurements, the correlation between the orientation degree and photoluminescence was investigated. It was suggested that the defects induced in large-angle grain boundaries were possibly responsible for the enhanced non-band-edge emission. [Copyright &y& Elsevier]

Examines the effect of Y[sub 2]O[sub 3] precipitates on critical current anisotropy in YBa[sub 2]Cu[sub 3]O[sub 7-x] thin films prepared by plasma-enhanced metalorganic vapor deposition. Use of the four-probe technique to measure the critical current density; Comparison of magnetic field positions in copper oxide planes; Function of precipitates as effective pinning centers.

Examines the thin films of yttrium-rich YBa[sub 2]Cu[sub 3]O[sub 7-x] with c-axis orientation prepared by plasma-enhanced chemical vapor deposition. Identification of yttria precipitates; Distribution of the yttria precipitates in the matrix; Effectiveness of the precipitates as flux pinning centers.

Prepares single-crystalline epitaxial YBa[sub 2]Cu[sub 3]O[sub 7-x] thin films by a plasma-enhanced metalorganic chemical vapor deposition (MOCVD). Formation of the films on lanthanum aluminum oxide substrates; Degree of epitaxial crystallinity of the films; Applications of MOCVD.

Studies oxygen decomposition in highly c-axis oriented YBa[sub 2]Cu[sub 3]O[sub 7-x] thin films deposited by plasma-enhanced metalorganic chemical vapor deposition. High transition temperature exhibited; Copper-rich precipitates on the surface; Reduction in transport properties observed in stoichiomeric films.

Discusses the preparation of YBCO superconducting thin films by metalorganic chemical vapor deposition process. Resistivity and magnetic susceptibility measurements of the as-deposited films; Measurement of the critical current densities by direct current transport method; Growth of films epitaxially with the c axis perpendicular to the surface of the substrate.

Reports that an in situ microwave plasma-enhanced metalorganic chemical vapor deposition process was used to fabricate highly c-axis oriented YBa[sub 2]Cu[sub 3]O[sub 7-x] superconducting thin films on metallic Ag substrates. Deposition of the films at a reduced substrate temperature.

Three different FeCoNi(CuAl) 0.2 alloy films sputtered with Ti were prepared using magnetron sputtering: single sputtering films of FeCoNi(CuAl) 0.2 target, co-sputtering films of FeCoNi(CuAl) 0.2 /Ti targets, and alternating sputtering composite films of FeCoNi(CuAl) 0.2 /Ti targets. SEM, XRD, AFM and nano indentation analysis showed that with the increase in Ti content and change in sputtering mode, the main phase structure of the film changed from FCC to BCC. The hardness and elastic modulus of FeCoNi(CuAl) 0.2 /Ti target co-sputtered films reached 7.33 GPa and 145 GPa, respectively. This can be attributed to the large atomic radius of Ti dissolved in the FeCoNi(CuAl) 0.2 system that caused phase transformation and significant lattice distortion. • Three types of FeCoNi(CuAl) 0.2 high entropy alloy films were prepared using different sputtering processes. • The introduction of Ti reduced the crystallinity of the alloy and caused changes in the phase structure from FCC to BCC. • These results indicated that the Ti solution caused significant lattice distortion and solution strengthening. [ABSTRACT FROM AUTHOR]