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We report on the optical properties in the dielectric regime of gold nanostructured granular thin films fabricated through sputter deposition with a composite target at room temperature and over a wide photon energy range (0.62–4.13 eV) by means of Spectroscopic Ellipsometry. The thickness and the films effective optical constants are successfully determined using an approach based on multiple Gaussian oscillators. In the quasi-static regime, i.e., 2 R ≪ λ , and in the dipole approximation, examining the real and imaginary parts, ε 1 , ε 2 , of the dielectric function, it is shown that the dc optical conductivity is almost negligible ( σ = ωε 0 ε 2 ≪ 10 −5 Ω cm −1 ) and only the capacitive contribution holds for the electron-phonon relaxation in localized surface plasmon of the gold particles. Furthermore, we find that the resonant frequencies ω p becomes red-shifted when the particles are electromagnetically coupled to each other or when the surrounding medium dielectric constant, ε m , increases, thus exhibiting a wide spectral tuning range of 1.95–2.24 eV. [ABSTRACT FROM AUTHOR]

In this work, we have grown nanostructured vanadium dioxide (VO2) thin films by a spray pyrolysis coating method on glass pre-heated substrates at 450 °C and studied their optical and electronic properties. As-prepared film structure and morphology, with a thickness of ~ 400 nm, were examined by X-ray diffraction, Raman spectra, and atomic force microscopy (AFM), thus revealing a polycrystalline monoclinic M1 phase. On the other hand, the electrical resistance was measured as a function of the temperature in the range of 25 to 100 °C where a clear transition from the M1 phase at T = 25 °C to the metallic one (conductive phase) at ~ 60 °C was observed. This also confirms the stability of the M1 phase for T < 60 °C. The electronic properties and band structure were additionally investigated by the local density approximation (LDA) using the first principle of the Korringa-Kohn-Rostroker (KKR). As a result, our material showed a magnetic property, specifically an antiferromagnetic stabilization of the M1 phase. [ABSTRACT FROM AUTHOR]

• Un- and Ni-doped ZnO thin films are synthesized and characterized. • Experimental and theoretical characterizations demonstrate stabilization of a small p-Schottky barrier upon Ni doping. • Reduction in p-Schottky barrier is mainly due to amelioration in the surface uniformity and modulization in the relative alignment of band edges at the interfaces. Large contact resistance at metal-substrate/ZnO heterostructure interfaces prevents achieving highly efficient device performance. Herein, we present a systematic study on the effect of Ni-doping in the reduction of the Schottky contact barrier at metal-substrate/ZnO heterostructure. To this end, Ni-doped zinc oxide (Ni:ZnO) thin films were deposited on glass substrate by a spray technique with different Ni-doping concentrations. X-ray Diffraction and Atomic Force Microscopy (AFM) measurements showed that Ni-doping enhances the surface uniformity as compared to the undoped-ZnO films and significantly decreases the roughness (RMS) from 35 to 17 nm. Conductive Atomic Force Microscopy (C-AFM) with a Bruker's platinum coated probe (Pt-Ir) tip results in the stabilization of a p-type Schottky contact with a small height barrier of ~0.4 eV, which is among the smallest values reported in literature for ZnO thin films. Our first principle calculations, which are based on the relative alignment of the band edges of the components, also confirm the reduction in the Schottky barrier height by Ni-doping in line with the experimental tendency. Both experimental and theoretical results provide a robust evidence of the potential of stabilization of a small p-type Schottky contact at metallic-substrate/ZnO interface through a Ni-doping. [ABSTRACT FROM AUTHOR]

Presents an abstract of the study 'Magneto-Optic and Microwave Properties of Epitaxial Garnet Thin Film Heterostructures and Superlattices,' by R. Ramesh, T. Venkatesan, S. Lofland, M. Dominguez, S. M. Bhagat, B. M Simion, and G. Thomas.