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Abstract: Indium tin oxide (ITO) thin films were grown on the (112¯0) surface of sapphire using fast-pulse laser deposition. It was found that when the oxygen pressure was above 2.66 Pa, the growth was epitaxial with the [111] direction perpendicular to the substrate. The epitaxial relation and crystal quality were evaluated by using high-resolution X-ray diffraction, which showed distinct pendellösung oscillations in θ–2θ scan of the ITO(222) reflection. The in-plane orientation relationship, ITO [33¯0]//Al2O3 [5¯501] and ITO [1¯/4,3¯/4,1]//Al2O3 [0001], was identified by X-ray ϕ scan, where no other domains with different orientations could be detected. Good values of mobility, >30 cm2/Vs, and resistivity, ∼2×10−4 Ω cm, were measured by the Hall and van der Pauw methods at room temperature. [Copyright &y& Elsevier]

We have employed ferromagnetic resonance to obtain magnetic anisotropy information in a series of YIG/GGG superlattices and a single YIG thin film with temperature variations. The Curie temperature of these samples increases with the YIG layer thickness, reaching saturation beyond a specific YIG thickness. As temperature rises, the magnitude of the calculated magnetocrystalline anisotropy constant decreases while the uniaxial anisotropy constant exhibits growing behavior. [Copyright &y& Elsevier]

Examines the layer-by-layer deposition of La[sub 1.85]Sr[sub 0.15]CuO[sub x] thin films by pulsed laser ablation. Use of reflection high-energy electron diffraction to monitor the growth of the thin films; Combination of pulsed molecular oxygen with a continuous source of atomic oxygen; Oscillation of the intensity of the specular beam during the deposition.

Describes the growth of epitaxial zinc selenide (ZnSe) films of high crystalline quality using pulse laser deposition (PLD). Pattern of the ZnSe films; Display of Kikuchi lines and bands by the pattern; Presence of free and bound excitons, donor-acceptor pairs by photoluminescence at 10 K of the films.