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The thermoreflectance method, which can measure thermal diffusivity in the cross-plane direction of thin films, mainly has two possible configurations; rear-heat front-detect (RF) and front-heat front-detect (FF) configuration. FF configuration is applicable to a wide variety of thin films including thin films deposited on opaque substrates, but this configuration has some problems in determination of the thermal diffusivity. One of the main problems is the effect of the penetration of pump beam and probe beam in thin film, which affects the initial temperature distribution near the sample's surface after pulse heating. Several studies have tried to analyze the effect but there have been no practical analytical solutions which can solve this problem in FF configuration. In this paper, we propose a new analytical solution which considers the penetration of pump beam and probe beam into thin film, and by applying Fourier expansion analysis which we developed in a previous study to thermoreflectance signals, we have determined the thermal diffusivity of thin film in the thermoreflectance method under FF configuration. We measured platinum thin films with different thickness under both FF and RF configuration and obtained consistent thermal diffusivity values from both configurations. [ABSTRACT FROM AUTHOR]

The thermoreflectance technique is one of the few methods which can measure thermal diffusivity of thin films as thin as 100 nm or thinner in the cross-plane direction. The thermoreflectance method under rear-heat front-detect configuration is sometimes called ultrafast laser flash method because of its similarity to laser flash method. Up to now it has typically only been possible to attempt to evaluate the interfacial thermal resistance between the thin films by preparing and measuring several samples with different thicknesses. In this study, a method to directly determine interfacial thermal resistance by a single measurement of a thin film on substrate is represented, by analyzing the shape of thermoreflectance signals with analytical solutions in frequency domain and time domain. Thermoreflectance signals observed from metallic thin films on sapphire substrate with different thickness steps were analyzed by Fourier analysis and fitted by analytical equations with four parameters: heat diffusion time across the first layer, ratio of virtual heat sources, characteristic time of cooling determined by interfacial thermal resistance and relative amplitude of the signal. Interface thermal resistance between the thin film and substrate was able to be determined reliably with smaller uncertainty. [ABSTRACT FROM AUTHOR]

The flash methods, which are the most popular transient methods for measuring the thermal diffusivity of solid materials, have evolved into ultrafast laser flash methods by using picosecond or nanosecond pulse lasers as a heating source and a thermo-reflectance technique such as high-speed thermometry. In conventional ultrafast laser flash methods, thermal diffusivity is determined by fitting an analytical equation after single pulse heating to observe thermo-reflectance signals, although actual thermo-reflectance signals are observed after periodic pulse heating. This paper presents an exact analytical solution of the temperature response expressed by Fourier series for one-dimensional heat diffusion after periodic pulse heating. These Fourier coefficients are directly related to the Laplace transformation of the temperature response after single pulse heating. The signal observed for a 100 nm thick platinum thin film on a fused quartz substrate was analyzed by this Fourier expansion analysis and fitted by analytical equations with three parameters: heat diffusion time across thin film, the ratio of heat effusion of the substrate to thin film, and the amplitude of the signal over the entire range of pulse interval in the time domain. Robustness in determining the thermal diffusivity of the thin film by the ultrafast laser flash method can be improved by this new analysis approach. [ABSTRACT FROM AUTHOR]

The crystallographic and transport properties of thin films fabricated by pulsed laser deposition and belonging to the Sm y (Fe x Ni1- x )4Sb12 filled skutterudite system were studied with the aim to unveil the effect exerted by temperature and duration of thermal treatments on structural and thermoelectric features. The importance of annealing treatments in Ar atmosphere up to 523 K was recognized, and the thermal treatment performed at 473 K for 3 h was selected as the most effective in improving the material properties. With respect to the corresponding bulk compositions, a significant enhancement in phase purity, as well as an increase in electrical conductivity and a drop in room temperature thermal conductivity, were observed in annealed films. The low thermal conductivity, in particular, can be deemed as deriving from the reduced dimensionality and the consequent substrate/film interfacial stress, coupled with the nanometric grain size. [ABSTRACT FROM AUTHOR]

In this work, we present the influence of Ga doping in Mg2Sn thin epitaxial films on sapphire (0001) substrates. Our results suggest that epitaxial nature is essential for achieving high mobility. Furthermore, we found that Ga incorporation influences the carrier concentration and acts as a phonon-scattering center. The optimal power factor and figure of merit values obtained were 1.49 × 10−3 W·m−1·K−1 and 0.08 at 300 K for Mg2Sn0.97Ga0.03. The values are in the same range as the bulk material of Mg-based II–IV semiconductors, suggesting that the combination of doping and epitaxial nature in thin films can be a promising route for miniaturization of thermoelectric devices based on Mg-based materials. [ABSTRACT FROM AUTHOR]

Filled skutterudites are currently studied as promising thermoelectric materials due to their high power factor and low thermal conductivity. The latter property, in particular, can be enhanced by adding scattering centers, such as the ones deriving from low dimensionality and the presence of interfaces. This work reports on the synthesis and characterization of thin films belonging to the Smy(FexNi1−x)4Sb12-filled skutterudite system. Films were deposited under vacuum conditions by the pulsed laser deposition (PLD) method on fused silica substrates, and the deposition temperature was varied. The effect of the annealing process was studied by subjecting a set of films to a thermal treatment for 1 h at 423 K. Electrical conductivity σ and Seebeck coefficient S were acquired by the four-probe method using a ZEM-3 apparatus performing cycles in the 348–523 K temperature range, recording both heating and cooling processes. Films deposited at room temperature required three cycles up to 523 K before being stabilized, thus revealing the importance of a proper annealing process in order to obtain reliable physical data. XRD analyses confirm the previous result, as only annealed films present a highly crystalline skutterudite not accompanied by extra phases. The power factor of annealed films is shown to be lower than in the corresponding bulk samples due to the lower Seebeck coefficients occurring in films. Room temperature thermal conductivity, on the contrary, shows values comparable to the ones of doubly doped bulk samples, thus highlighting the positive effect of interfaces on the introduction of scattering centers, and therefore on the reduction of thermal conductivity. [ABSTRACT FROM AUTHOR]

Thermoelectric thin films are of great interest for self-powering Internet of Things (IoT) nodes via energy harvesting. Heusler-type Fe 2 VAl attracts some attention for room-temperature thermoelectric applications. However, the large overall thermal conductivity leads to a poor performance that restricts the current investigations. Herein, we report a comprehensive study of structural, thermoelectric, and magnetic properties of Fe 2 V 0.9 Ti 0.1 Al thin films on quartz substrate, grown by magnetron sputtering. It is found that high-temperature annealing is more effective than the long-time annealing at the low temperatures to stabilize the L 2 1 type structure of Fe 2 VAl, leading to a much larger Seebeck coefficient and slightly higher thermal conductivity. More importantly, the significant off-stoichiometry phenomenon, namely Fe-rich composition, contributes to n-type conduction of thin films. Both the picosecond and nanosecond time-domain thermoreflectance techniques were employed to successfully measure the thin-film thermal conductivities, merely one-third of bulk material, demonstrating the effectiveness of utilizing nanostructuring to reduce the thermal conductivity of Fe 2 VAl. Moreover, magnetic susceptibility measurements reveal that thin films are ferromagnets, while the bulk sample is characterized by paramagnetism. Our finding sheds new light on the composition-structure-property relationship of Fe 2 VAl thin films for future related applications. Image, graphical abstract The significant off-stoichiometry of Ti doped Fe 2 VAl films in the L2 1 type structure grown on quartz substrate leads to the unexpected n-type conduction and strong ferromagetism, which are may be helpful for thermoelectric, magnetoelectronic, and also spintronic applications. [ABSTRACT FROM AUTHOR]

[Display omitted] • Multi-scale defects are induced due to heavy doping and residual stress. • The compressive-stressed films own better ZT compared with tensile-stressed films and bulk. • The ultra-low thermal conductivity κ = 0.44 W/mK is observed. • The breaking record of figure of merit ZT = 0.66 is reported in the delafossite material family. Defect engineering can effectively modulate the band structure of a thermoelectric (TE) material, thereby enhancing its power factor S2σ. Furthermore, residual stress engineering influences the film performance, especially in the planar technologies. For the TE Mg-doped CuCrO 2 -based materials, the limitations in achieving an outstanding figure of merit, ZT, arise from their characteristically low charge carrier mobility and high thermal conductivity. Herein, we propose a combination of defect engineering and stress engineering via heavy doping CuCr 1-x Mg x O 2 with × = 0.15 at different deposition temperatures to overcome the aforementioned limitations. Combining the compressive residual stress with multiscale defects (point defects, grain boundaries, and nano-inclusions) significantly reduces the thermal conductivity (κ) to 0.44 W/mK. The σ of the films shows a remarkable enhancement because of point defects introduced via heavy doping. Notably, the compressive-stressed films exhibit higher ZT values, compared to the tensile-stressed films. As a result, an outstanding approximated ZT of 0.66 is observed in the compressive-stressed CuCr 0.85 Mg 0.15 O 2 films, overcoming the limitations of its ZT value observed for the past two decades. [ABSTRACT FROM AUTHOR]

As the alternative for the high-performance thermoelectric semiconductors such as GeTe, PbTe, and other compounds with rare and expensive elements, the cost-effective and abundant sulfides have been considered as one of the promising materials and garnered intensive interest. In this study, a rarely reported metastable wurtzite-type phase of CuFeS 2 has been successfully obtained as thin film grown on quartz substrates via magnetron sputtering. Subsequent temperature-dependent depositions were performed to establish a phase transition between the metastable wurtzite and the chalcopyrite phase in the temperature range between room temperature and 473 K while maintaining the nominal composition ratio of CuFeS 2. The wurtzite metastable analogue can be recovered and stabilized when the temperature reached 573 K and above. Thermoelectric properties were evaluated and constituted the first experimental result of the inorganic CuFeS 2 thin film for thermoelectrics. The phase change between the wurtzite and chalcopyrite structure induced a significant effect on the thermoelectric properties associated with the lattice disorder and carrier scattering. The reduced thermal conductivity compared with bulk was demonstrated by the picosecond time-domain thermoreflectance method, which was found to be well correlated with the polycrystal sizes. The work provides new insight into synthesizing and manipulating the metastable wurtzite phase of the ternary I-III-VI for future applications in thermoelectrics, solar cells, and other electronic applications. [Display omitted] [ABSTRACT FROM AUTHOR]