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In this letter, we demonstrate an integrated negative capacitance oxide thin-film transistor (NC-OTFT) based on ferroelectric Hf0.5Zr0.5O2 (HfZrO) film. The buried-gated TiN/HfZrO/Al2O3 structure is developed with indium zinc oxide as its channel. The transfer characteristics are measured with 1.2-V supply voltage. The NC-OTFT 15-nm HfZrO/6-nm Al2O3 shows $2.5\times 10^{\textsf {7}}$ ON/OFF current ratio and 120-mV anticlockwise hysteresis. The subthreshold swing (SS) values of this NC-OTFT are lower than those of the control devices without HfZrO. The reverse SS shows sub-60 mV/decade about 2 orders of drain current. The minimal reverse and forward SS values are 52.8 and 74.1 mV/decade, respectively. The NC-OTFT with 8-nm HfZrO/6-nm Al2O3 is inspected with considerably narrower hysteresis of 50 mV. Its reverse and forward SS values reach as low as 63.6 and 69.8 mV/decade, respectively. The NC effect is observed in the gate-stack capacitance of the NC-OTFTs. This NC-OTFT is promising for low operating voltage and low power consumption applications. [ABSTRACT FROM AUTHOR]

Back-channel contamination induced amorphous silicon TFT deterioration is found to cause V-crosstalk failure during reliability test. An additive used in photoresist stripping process is linked to this phenomenon, and effective solutions in the aspect of process and material are verified by experiments and measurements. [ABSTRACT FROM AUTHOR]

A 17-inch full-color active matrix organic light-emitting diode (AMOLED) display has been developed, which combine with amorphous indium-gallium-zinc oxide (IGZO) thin film transistors and ink-jet printing technology. It was also proved that ink-jet printing technology can be used for large size AMOLED panel fabrication on IGZO thin film transistor backplane. [ABSTRACT FROM AUTHOR]

Integrated gate driver circuit with Oxide TFTs often suffers from the leakage current problem due to the depletion-mode TFT's characteristic. This paper analyzed the origin of circuit failure and proposed a leakage current cutting technique in which using output feedback to turn off the normally-on switches. The feedback scheme is designed not only within its own stage but across the neighboring stages. Compared with previous work, it avoids the degradation of the output caused by the feedback TFT, thus providing a more robust solution. The circuit is fabricated employing a-IGZO TFTs. The experiment result shows that the circuit works successfully with maximum −4.5V threshould voltage. [ABSTRACT FROM AUTHOR]