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In this study, transparent Li–N co-doped ZnSnO (ZTO: (Li, N)) thin film transistors (TFTs) with a staggered bottom-gate structure were fabricated by radio frequency magnetron sputtering at room temperature. Emphasis was placed on investigating the effects of post-annealing temperature on their physical and electrical properties. An appropriate post-annealing temperature contributes not only to achieving good quality thin films, but also to improving the electrical performance of the ZTO: (Li, N) TFTs. The ZTO: (Li, N) TFTs annealed at 675 °C showed the best electrical characteristics with a high saturation mobility of 26.8 cm 2 V −1 s −1 , a threshold voltage of 6.0 V and a large on/off current ratio of 4.5×10 7 . [ABSTRACT FROM AUTHOR]

The preparation and electrical properties of ZnO: (Li,N) thin film transistors were studied in this work. The Li–N dual doped ZnO films, as the active layers with thickness varied from 20 to 60 nm, were deposited on SiO 2 /n-type Si substrates by radio frequency magnetron sputtering. The transistor with 30-nm-thick ZnO: (Li,N) film shows the best performance with a field effect mobility of 33.6 cm 2 /V.s, a threshold voltage of −6 V and an on/off current ratio of 1.08 × 10 8 . And the time-dependent instability of the device was studied. The mobility increases to 41.5 cm 2 /V after 120 days, and then decreases to 31.2 cm 2 /V after 180 days, accompanied by a negative shift of threshold voltage and a decrease of on/off ratio as day increases. The main cause of the instability may be the adsorption of humidity from ambient air. [ABSTRACT FROM AUTHOR]

InZnLiO thin film transistors with the bottom gate structure were fabricated by radio frequency magnetron sputtering. The structure of InZnLiO channel layers were studied by SEM and XRD. The electrical properties on the effect of the annealing temperature were investigated. As the annealing temperature increased, the field effect mobility and the on/off current ratio increased observably, and the threshold voltage was shifted to the negative direction. But when the temperature was too high, the electrical properties of InZnLiO TFTs deteriorated significantly. In all, the transistor annealed at 950 °C exhibited the best performance, with a field effect mobility of 63.1 cm 2 /V s, an on/off current ratio of 6.9 × 10 6 , and a threshold voltage of 0.2 V. [ABSTRACT FROM AUTHOR]