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The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is studied. As a result of this treatment followed by high-temperature annealing at the temperature 930 °C, considerable PL intensity growth and the small blueshift of PL peak position are observed in the porous, column-like structure films containing Si nanocrystals. A more intense shortwave band (peak position -- 540-560 nm) appears in the PL spectrum of these structures, in addition to the longwave band (760-780 nm). Both PL bands in treated samples are characterized by monomolecular radiative recombination, which can be attributed to annihilation of excitons in silicon nanocrystals embedded into oxide matrix (longwave band) and in carbon-enriched matrix near surface of oxide nanocolumns (shortwave band). The possibility to control the PL characteristics of the porous structures in a wide spectral range by above treatment is shown. [ABSTRACT FROM AUTHOR]

Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO2 layers is shown. [ABSTRACT FROM AUTHOR]