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Electrodeposition is a convenient technique for the development of low cost materials for photovoltaic (PV) device processing. Using a single step electrodeposition route, several groups have fabricated CIS (CuInSe) and CIGS (CuInGaSe) films. One of the most important requirements for successful application of one-step electrodeposition film formation is the ability to control composition of the deposited films and to develop polycrystalline microstructures with a low surface roughness and high sintered density.

In this work, we are reporting results on the electrodeposition of the CuInSe2 thin films on molybdenum thin foil substrates. We have used an aqueous non-buffered electrolyte and a careful choice of deposition parameters to ensure a good quality and composition of the deposited films. In addition, CdS was replaced in the buffer layer with a wider bandgap Zn(S,O,OH) film obtained by chemical bath deposition. The deposited films were annealed in inert atmosphere at different temperatures. The influence of annealing temperature on the properties of the films is briefly discussed. Films were also characterized by photoelectrochemical and I-V measurements. Structural characterization was carried out by XRD and Raman spectroscopy. Results show the growth of good quality films with very uniform morphology and good chemical composition.

Among the next-generation solar cells, a predominant role is played by Dye sensitized solar cells (DSSC) based on ruthenium complexes as sensitizers. They take advantage of a photoelectrochemical system to transform solar radiation into electric energy. In fact, DSSCs represent a cost-effective alternative to traditional silicon-based photovoltaic devices and they do not require expensive and sophisticated apparatus for their fabrication. In this work, we have produced and tested ruthenium DSSCs. In particular, we have measured the main parameters of these cells, such as the electrical and power performances and the efficiency levels, at different irradiance levels and at different incident wavelengths. Our results show a maximum conversion efficiency between 11% and 12% in the range within 540 and 550 nm. The results are in a fairly good agreement with theoretical predictions, especially with regard to the dependence of the parameters on the irradiance levels. Nevertheless, there are some aspects that suggest the need for further and more detailed studies on the deterioration mechanisms and fabrication processes.

Electrodeposition is a convenient technique for the development of low cost materials for photovoltaic (PV) device processing. Using a single step electrodeposition route, several groups have fabricated CIS (CuInSe) and CIGS (CuInGaSe) films [1]. One of the most important requirements for successful application of one-step electrodeposition film formation, is the ability to control composition of the deposited films and to develop polycrystalline microstructures with a low surface roughness and high sintered density. In this preliminary work, CIS films were produced by single bath electrodeposition finding the optimal conditions in order to achieve a dense film with high crystallinity and uniform, flat surfaces, which are of critical importance for photovoltaic applications. Electrodeposition was carried out in the potentiostatic mode using a conventional three-electrode configuration.