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The aim of this work is to present a characterization of a new silicon carbide (SiC) neutron detector fabricated at the Institute of Microelectronics of Barcelona (IMB-CNM-CSIC). The device is based on a 50 μ m thick p-n diode built in a 4H-SiC wafer. Performance studies were carried out under different neutron energy spectra, including thermal and quasi-monoenergetic fast neutrons at the CNA HiSPANoS facility. We implemented a method for the fabrication of enriched LiF conversion layers to use for the detection of thermal neutrons. The detector was proven to be capable of being used for thermal neutron detection with conversion layers of 10B and LiF. A detection efficiency of 6 ± 1% was achieved with a 25 μ m thick LiF conversion layer. It was also confirmed that the device can be employed for the detection of recoil nuclei and protons produced by fast neutrons. The spectra obtained experimentally were compared with PHITS simulations. This work represents the first step towards the design and fabrication of new SiC neutron detectors in the IMB-CNM-CSIC clean room with potential applications in various scientific and technological fields. [ABSTRACT FROM AUTHOR]