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Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 µm wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots present a promising solution here, offering distinct advantages, such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 µm, a low dark current of only 106 nA, and a bandwidth of 1.1 MHz under a −3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 µm wavelength range.

We present the current state of the art in micro-transfer printing for heterogeneously integrated silicon photonic integrated circuits. The versatility of the technology is highlighted, as is the way ahead to make this technology a key enabler for next-generation photonic systems-on-chip.

We present an elegant and effective approach for the design of adiabatic waveguide couplers tailored for the heterogeneous integration of photonic building blocks. This method empowers users to incorporate the shortest taper(s) in their designs, while upholding optimal coupling efficiency. The technique assesses mode overlap between a minimum of two waveguides within the cross-section of any heterogeneous material stack, determining the necessary waveguide cross-sectional dimension to achieve optimal coupling efficiency. Two illustrative design applications are showcased and compared to a linear, concave, and convex taper for reference: a SiN-to-polymer structure exhibiting a 40% coupling improvement and a Si-to-GeSi structure having a 2.2 up to 5 times shorter length.

We report a waveguide-integrated BP/MoTe2 PN heterojunction photodetector. It presents ultralow dark currents and high responsivities, which has potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits.

Abstract 2D materials are considered for applications that require strong light-matter interaction because of the apparently giant oscillator strength of the exciton transitions in the absorbance spectrum. Nevertheless, the effective oscillator strengths of these transitions have been scarcely reported, nor is there a consistent interpretation of the obtained values. Here, we analyse the transition dipole moment and the ensuing oscillator strength of the exciton transition in 2D CdSe nanoplatelets by means of the optically induced Stark effect (OSE). Intriguingly, we find that the exciton absorption line reacts to a high intensity optical field as a transition with an oscillator strength F S t a r k that is 50 times smaller than expected based on the linear absorption coefficient. We propose that the pronounced exciton absorption line should be seen as the sum of multiple, low oscillator strength transitions, rather than a single high oscillator strength one, a feat we assign to strong exciton center-of-mass localization. Within the quantum mechanical description of excitons, this 50-fold difference between both oscillator strengths corresponds to the ratio between the coherence area of the exciton’s center of mass and the total area, which yields a coherence area of a mere 6.1 nm2. Since we find that the coherence area increases with reducing temperature, we conclude that thermal effects, related to lattice vibrations, contribute to exciton localization. In further support of this localization model, we show that F S t a r k is independent of the nanoplatelet area, correctly predicts the radiative lifetime, and lines up for strongly confined quantum dot systems.

Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs.

Over the last few years, there has been rapid development in demonstrating stimulated Brillouin scattering in chip-integrated optical waveguides. Most of the work has focused on finding good materials for achieving net gain, however, rather than on exploring novel waveguide designs. In this paper, we have used genetic algorithms to explore a wide range of possible waveguide shapes to achieve high gain in silicon and silicon oxide based integrated platforms. The result is a range of novel waveguide designs operating over a wide range of mechanical frequencies. Several of the waveguides found have a simulated gain in excess of 108 (Wm)−1, far above anything previously demonstrated.

A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 × 0.65 mm2 for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved.

For possible applications of colloidal nanocrystals in optoelectronics and nanophotonics, it is of high interest to study their response at low excitation intensity with high repetition rates, as switching energies in the pJ/bit to sub-pJ/bit range are targeted. We develop a sensitive pump-probe method to study the carrier dynamics in colloidal PbS/CdS quantum dots deposited on a silicon nitride waveguide after excitation by laser pulses with an average energy of few pJ/pulse. We combine an amplitude modulation of the pump pulse with phase-sensitive heterodyne detection. This approach permits to use co-linearly propagating co-polarized pulses. The method allows resolving transmission changes of the order of 10−5 and phase changes of arcseconds. We find a modulation on a sub-nanosecond time scale caused by Auger processes and biexciton decay in the quantum dots. With ground state lifetimes exceeding 1 μs, these processes become important for possible realizations of opto-electronic switching and modulation based on colloidal quantum dots emitting in the telecommunication wavelength regime.

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

A novel fiber Bragg grating (FBG) interrogator is demonstrated based on an optimized arrayed waveguide grating (AWG) filter. The AWG response is optimized to achieve large crosstalk between the output channels, which allows simultaneous detection of multiple FBG peaks, using centroid signal processing techniques, without constraints on the minimum FBG peak spectral width. The measured interrogator resolution is 2.5 pm, and the total measurement range is 50 nm. The device is fabricated in a silicon-on-insulator platform and has a footprint of only 2.2 × 1.5 mm. A novel approach to minimize the polarization dependence of the device is proposed and experimentally demonstrated.