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Field-effect transistors (FETs) based on MoS2 nanotubes prepared in anodic aluminum oxide (AAO) templates have been fabricated and demonstrated in this work. MoS2 nanotubes were prepared by the thermal decomposition of (NH4)2MoS4 precursors in the AAO template. The diameter of the MoS2 nanotubes was approximately 80 nm, which corresponded to the size of the AAO template. Schottky-type FETs were prepared with Au and Pt electrodes, and the FETs exhibited n-type behavior, with on/off ratios that exceeded 103 at VSD = 0.5 V.

Two-dimensionally Ordered macroporous films have attracted attention for their potential application such as sensors and optoelectronic devices. Here, highly ordered ZnO nanonets film were successfully prepared by a facile method, which uses monolayer colloidal crystal template composed of polystyrene spheres and sol-gel spin-coating method. Furthermore, ZnO nanonets-based ultraviolet photodetector are constructed, which showed high on/off current ratio of 2.7 × 105 under 370 nm UV light illumination with an intensity of 0.85 mW/cm2.