1. Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy
- Author
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Jie Liu, Yao Ma, Mingmin Huang, Jiyuan Liu, Min Gong, Shaomin Wang, Youmei Sun, Zhimei Yang, Pengfei Zhai, and Yun Li
- Subjects
010302 applied physics ,Nuclear and High Energy Physics ,Materials science ,Annealing (metallurgy) ,Schottky barrier ,Recrystallization (metallurgy) ,Schottky diode ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Fluence ,Molecular physics ,symbols.namesake ,Swift heavy ion ,0103 physical sciences ,symbols ,Irradiation ,0210 nano-technology ,Raman spectroscopy ,Instrumentation - Abstract
It is especially important to study on the change of 4H-SiC physical properties by swift heavy ion irradiation (SHI) for the future application of SiC devices in extreme irradiation environment. Herein, 4H-SiC Schottky barrier diodes (SBDs) are irradiated by 1.9 GeV 209Bi ion beams without intentional heating. The cross-sectional Micro-Raman Spectroscopy (MRS) results clearly indicated that there are new vibration bands at low fluence. This is attributed to the formation of homonuclear bonds Si–Si and C–C within the SiC network to break down the Raman selection rules. At high fluence, there are only typical Raman data for 4H-SiC crystal and the disappearance of Si–Si and C–C bonds. In addition, it is observed that the interfacial structure is modified due to the silicon and carbon atomic migration during SHI process at the metal-semiconductor interface, and then reacting at high temperature annealing treatment. Furthermore, these results suggest that the evolution of recrystallization effect is varied with irradiation fluence by the cross-sectional MRS.
- Published
- 2020
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