Search

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates., Here, the authors characterize the spectroscopic and transport properties of heterojunctions composed of quasi-metallic and semiconducting graphene nanoribbons (GNRs) with different widths, showing a predominant quantum tunnelling mechanism. The GNR heterojunctions can also be used to realize adsorbate sensors with high sensitivity.

We present laser-induced photothermal synthesis of atomically precise graphene nanoribbons (GNRs). The kinetics of photothermal bottom-up GNR growth are unravelled by in situ Raman spectroscopy carried out in ultrahigh vacuum. We photothermally drive the reaction steps by short periods of laser irradiation and subsequently analyze the Raman spectra of the reactants in the irradiated area. Growth kinetics of chevron GNRs (CGNRs) and seven atoms wide armchair GNRs (7-AGNRs) is investigated. The reaction rate constants for polymerization, cyclodehydrogenation, and interribbon fusion are experimentally determined. We find that the limiting rate constants for CGNR growth are several hundred times smaller than for 7-AGNR growth and that interribbon fusion is an important elementary reaction occurring during 7-AGNR growth. Our work highlights that photothermal synthesis and in situ Raman spectroscopy are a powerful tandem for the investigation of on-surface reactions.

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work highlights that charge transfer, zone folding of graphene bands and the covalent bonding between C and Cs atoms are at the origin of the flat energy band formation. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas., 22 pages, 4 Figures

The photoluminescence from aligned 7-atom wide armchair-edge graphene nanoribbons coupled to plasmonic nanoantennas was recently observed to display blinking. Photoluminescence blinking is a hallmark of emission from single quantum emitters. Here we explore the origin of the blinking. We study the influence of the local field enhancement in the vicinity of nanoantennas on the photoluminescence blinking. We observe a clear correlation between the blinking amplitudes and the plasmonic enhancement. For non-resonant metal nanostructures the blinking vanishes almost completely. Our results allow us to conclude that the blinking is an intrinsic feature of the emission from the graphene nanoribbons. This is in contrast to the case of single-molecule surface-enhanced Raman scattering, where it is known that ballistic charge transfer between plasmonic nanoparticles and the molecule under study critically contributes to the blinking.

The random phase approximation (RPA) systematically overestimates the magnitude of the correlation energy and generally underestimates cohesive energies. This originates in part from the complete lack of exchange terms that would otherwise cancel Pauli exclusion principle violating (EPV) contributions. The uncanceled EPV contributions also manifest themselves in form of an unphysical negative pair density of spin-parallel electrons close to electron-electron coalescence. We follow considerations of many-body perturbation theory to propose an exchange correction that corrects the largest set of EPV contributions, while having the lowest possible computational complexity. The proposed method exchanges adjacent particle/hole pairs in the RPA diagrams, considerably improving the pair density of spin-parallel electrons close to coalescence in the uniform electron gas (UEG). The accuracy of the correlation energy is comparable to other variants of second-order screened exchange (SOSEX) corrections although it is slightly more accurate for the spin-polarized UEG. Its computational complexity scales as [Formula: see text] or [Formula: see text] in orbital space or real space, respectively. Its memory requirement scales as [Formula: see text].

Scanning tunneling microscopy and spectroscopy are used to image the charge density wave at the surface of cleaved ${\mathrm{VSe}}_{2}$ and to probe its local density of states at 5 K. The main features in the spectrum are linked to the contributions of the $p$-like and $d$-like bands of ${\mathrm{VSe}}_{2}$ found in angle-resolved photoemission spectroscopy and tight-binding calculations. Different from previous tunneling spectroscopy work, we find a narrow partial gap at the Fermi level that we associate with the charge density wave phase. The energy scale of the gap found in the experiment is in good agreement with the charge density wave transition temperature of ${\mathrm{VSe}}_{2}$, under the assumption of weak electron-phonon coupling, consistent with the Peierls model of Fermi surface nesting. The role of defects is investigated, which reveals that the partial gap in the density of states and hence the charge density wave itself is extremely stable, though the order, phase, and amplitude of the charge density waves on the surface are strongly perturbed by defects.

We present a comprehensive benchmark study of the adsorption energy of a single water molecule on the (001) LiH surface using periodic coupled cluster and quantum Monte Carlo theories. We benchmark and compare different implementations of quantum chemical wave function based theories in order to verify the reliability of the predicted adsorption energies and the employed approximations. Furthermore we compare the predicted adsorption energies to those obtained employing widely used van der Waals density-functionals. Our findings show that quantum chemical approaches are becoming a robust and reliable tool for condensed phase electronic structure calculations, providing an additional tool that can also help in potentially improving currently available van der Waals density-functionals.

A setup for the preparation of oriented Au(111)/mica thin films of ∼100 nm thickness as an active substrate for graphene nanoribbon growth is shown. Low-energy electron diffraction shows that the Au(111) thin films have a single crystallographic orientation over the whole surface area. Graphene nanoribbons are synthesized by the bottom-up approach via surface polymerization of precursor molecules that are evaporated onto the catalytically active Au(111)/mica substrate. The graphene nanoribbons are investigated by a combination of resonance Raman, X-ray photoemission spectroscopy, and near-edge X-ray absorption fine structure spectroscopy confirming a nanoribbon quality equal to nanoribbons grown on commercially available single-crystal Au(111) substrates. The present work, therefore, establishes the insitu preparation of Au(111)/mica as an inexpensive and simple method to prepare substrates of desired shape and thickness for surface polymerization reactions which are of interest to a growing community of researchers working on graphene nanoribbons.

The opening of a band gap in graphene nanoribbons induces novel optical and electronic properties, strongly enhancing their application potential in nanoscale devices. Knowledge of the optical excitations and associated relaxation dynamics are essential for developing and optimizing device designs and functionality. Here we report on the optical excitations and associated relaxation dynamics in surface aligned 7-atom wide armchair graphene nanoribbons as seen by time-resolved spontaneous Stokes and anti-Stokes Raman scattering spectroscopy. On the anti-Stokes side we observe an optically induced increase of the scattering intensity of the Raman active optical phonons which we assign to changes in the optical phonon populations. The optical phonon population decays with a lifetime of ∼2 ps, indicating an efficient optical-acoustic phonon cooling mechanism. On the Stokes side we observe a substantial decrease of the phonon peak intensities which we relate to the dynamics of the optically induced exciton population. The exciton population shows a multi-exponential relaxation on the hundreds of ps time scale and is independent of the excitation intensity, indicating that exciton-exciton annihilation processes are not important and the exsistence of dark and trapped exciton states. Our results shed light on the optically induced phonon and exciton dynamics in surface aligned armchair graphene nanoribbons and demonstrate that time-resolved spontaneous Raman scattering spectroscopy is a powerful method for exploring quasi-particle dynamics in low dimensional materials.

We employ ultra-high vacuum (UHV) Raman spectroscopy in tandem with angle-resolved photoemission (ARPES) to investigate the doping-dependent Raman spectrum of epitaxial graphene on Ir(111). The evolution of Raman spectra from pristine to heavily Cs doped graphene up to a carrier concentration of 4.4*10^14cm^-2 is investigated. At this doping graphene is at the onset of the Lifshitz transition and renormalization effects reduce the electronic bandwidth. The optical transition at the saddle point in the Brillouin zone then becomes experimentally accessible by ultraviolet (UV) light excitation which achieves resonance Raman conditions in close vicinity to the van Hove singularity in the joint density of states. The position of the Raman G band of fully doped graphene/Ir(111) shifts down by ~60cm^-1. The G band asymmetry of Cs doped epitaxial graphene assumes an unusual strong Fano asymmetry opposite to that of the G band of doped graphene on insulators. Our calculations can fully explain these observations by substrate dependent quantum interference effects in the scattering pathways for vibrational and electronic Raman scattering.

We report on the synthesis and spectroscopic characterization of alkali metal intercalated ZrSe2 single crystals. ZrSe2 is produced by chemical vapour transport and then Li is intercalated. Intercalation is performed from the liquid phase (via butyllithium) and from the vapour phase. Raman spectroscopy of intercalated ZrSe2 reveals phonon energy shifts of the Raman active A1g and Eg phonon modes, the disappearance of two-phonon modes and new low wavenumber Raman modes. Angle-resolved photoemission spectroscopy is used to perform a mapping of the Fermi surface revealing an electron concentration of 4.7 × 1014 cm−2. We also perform vapour phase intercalation of K and Cs into ZrSe2 and observe similar changes in the Raman modes as for the Li case.

The phase diagrams of correlated systems like cuprates or pnictides high-temperature superconductors are characterized by a topological change of the Fermi surface under continuous variation of an external parameter, the so-called Lifshitz transition. However, the large number of low-temperature instabilities and the interplay of multiple energy scales complicate the study of this phenomenon. Here we first identify the optical signatures of a pressure-induced Lifshitz transition in a clean elemental system, black phosphorus. By applying external pressures above 1.5 GPa, we observe a change in the pressure dependence of the Drude plasma frequency due to the appearance of massless Dirac fermions. At higher pressures, optical signatures of two structural phase transitions are also identified. Our findings suggest that a key fingerprint of the Lifshitz transition in solid state systems, and in absence of structural phase transitions, is a discontinuity of the Drude plasma frequency due to the change of Fermi surface topology.

We couple photoluminescent semiconducting 7-atom wide armchair edge graphene nanoribbons to plasmonic nanoantenna arrays and demonstrate an enhancement of the photoluminescence and Raman scattering intensity of the nanoribbons by more than an order of magnitude averaged over large areas, and by three orders of magnitude in the hot spots of plasmonic antennas. The increase in signal allows us to study Raman spectra with high signal-to-noise ratio. Using plasmonic enhancement we are able to detect the off-resonant Raman scattering from the modified radial breathing-like mode (RBLM) due to physisorbed molecules, the 3rd order RBLM, and C-H vibrations. We find excellent agreement between experimental data and simulations describing the spectral dependence of the enhancement and modifications of the polarization anisotropy. The strong field gradients in the optical near-field further allow us to probe the subwavelength coherence properties of the phonon modes in the nanoribbons. We theoretically model this considering a finite phonon correlation length along the GNR direction. Our results allow estimating the correlation length in graphene nanoribbons.

The effect of lithium atoms' evaporation on the surface of monolayer MoS2 grown on SiO2/Si substrate is studied using ultrahigh vacuum (∼10−11 mbar) Raman and circularly polarized photoluminescence spectroscopies, at low lithium coverage (up to ∼0.17 monolayer). With increasing Li doping, the dominant E12g and A1g Raman modes of MoS2 shift in energy and broaden. Additionally, non zone-center phonon modes become Raman active. This regards, in particular, to double resonance Raman scattering processes, involving longitudinal acoustic phonon modes at the M and K points of the Brillouin zone of MoS2 and defects. It is also accompanied by a significant decrease in the overall intensity and the degree of circular polarization of the photoluminescence spectrum. The observed changes in the optical spectra are understood as a result of electron doping by lithium atoms and disorder- activated intervalley scattering of electrons and holes in the electronic band structure of monolayer MoS2.

© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.

© 2017 American Chemical Society. We demonstrate the alignment-preserving transfer of parallel graphene nanoribbons (GNRs) onto insulating substrates. The photophysics of such samples is characterized by polarized Raman and photoluminescence (PL) spectroscopies. The Raman scattered light and the PL are polarized along the GNR axis. The Raman cross section as a function of excitation energy has distinct excitonic peaks associated with transitions between the one-dimensional parabolic subbands. We find that the PL of GNRs is intrinsically low but can be strongly enhanced by blue laser irradiation in ambient conditions or hydrogenation in ultrahigh vacuum. These functionalization routes cause the formation of sp3 defects in GNRs. We demonstrate the laser writing of luminescent patterns in GNR films for maskless lithography by the controlled generation of defects. Our findings set the stage for further exploration of the optical properties of GNRs on insulating substrates and in device geometries.

The properties of all materials arise largely from the quantum mechanics of their constituent electrons under the influence of the electric field of the nuclei. The solution of the underlying many-electron Schrodinger equation is a ‘non-polynomial hard’ problem, owing to the complex interplay of kinetic energy, electron–electron repulsion and the Pauli exclusion principle. The dominant computational method for describing such systems has been density functional theory. Quantum-chemical methods—based on an explicit ansatz for the many-electron wavefunctions and, hence, potentially more accurate—have not been fully explored in the solid state owing to their computational complexity, which ranges from strongly exponential to high-order polynomial in system size. Here we report the application of an exact technique, full configuration interaction quantum Monte Carlo to a variety of real solids, providing reference many-electron energies that are used to rigorously benchmark the standard hierarchy of quantum-chemical techniques, up to the ‘gold standard’ coupled-cluster ansatz, including single, double and perturbative triple particle–hole excitation operators. We show the errors in cohesive energies predicted by this method to be small, indicating the potential of this computationally polynomial scaling technique to tackle current solid-state problems. Recent developments that reduce the computational cost and scaling of wavefunction-based quantum-chemical techniques open the way to the successful application of such techniques to a variety of real-world solids. Computational descriptions of solid-state materials are currently dominated by methods based on density functional theory. An attractive and potentially more accurate approach would be to adopt the wavefunction-based methods of quantum chemistry, although these have not received as much attention because of the computational complexities involved. Now George Booth and colleagues show how recent developments that serve to reduce the computational cost and scaling of such quantum-chemical techniques open the way to their successful application to a variety of real-world solids.

We present a simple, robust and black-box approach to the implementation and use of local, periodic, atom-centered Gaussian basis functions within a plane wave code, in a computationally efficient manner. The procedure outlined is based on the representation of the Gaussians within a finite bandwidth by their underlying plane wave coefficients. The core region is handled within the projected augment wave framework, by pseudizing the Gaussian functions within a cut-off radius around each nucleus, smoothing the functions so that they are faithfully represented by a plane wave basis with only moderate kinetic energy cutoff. To mitigate the effects of the basis set superposition error and incompleteness at the mean-field level introduced by the Gaussian basis, we also propose a hybrid approach, whereby the complete occupied space is first converged within a large plane wave basis, and the Gaussian basis used to construct a complementary virtual space for the application of correlated methods. We demonstrate that these pseudized Gaussians yield compact and systematically improvable spaces with an accuracy comparable to their non-pseudized Gaussian counterparts. A key advantage of the described method is its ability to efficiently capture and describe electronic correlation effects of weakly bound and low-dimensional systems, where plane waves are not sufficiently compact or able to be truncated without unphysical artefacts. We investigate the accuracy of the pseudized Gaussians for the water dimer interaction, neon solid and water adsorption on a LiH surface, at the level of second-order M\{o}ller--Plesset perturbation theory.

The electronic properties and surface structures of K-doped graphene supported on Ir(111) are characterized as a function of temperature and coverage by combining low-energy electron diffraction, angle-resolved photoemission spectroscopy, and density functional theory (DFT) calculations. Deposition of K on graphene at room temperature (RT) yields a stable $(\ensuremath{\surd}3\ifmmode\times\else\texttimes\fi{}\ensuremath{\surd}3)$ R30\ifmmode^\circ\else\textdegree\fi{} surface structure having an intrinsic electron doping that shifts the graphene Dirac point by ${E}_{D}=1.30\phantom{\rule{0.16em}{0ex}}\mathrm{eV}$ below the Fermi level. Keeping the graphene substrate at 80 K during deposition generates instead a $(2\ifmmode\times\else\texttimes\fi{}2)$ phase, which is stable until full monolayer coverage. Further deposition of K followed by RT annealing develops a double-layer K-doped graphene that effectively doubles the K coverage and the related charge transfer, as well as maximizing the doping level $({E}_{D}=1.61\phantom{\rule{0.16em}{0ex}}\mathrm{eV})$. The measured electron doping and the surface reconstructions are rationalized by DFT calculations. These indicate a large thermodynamic driving force for K intercalation below the graphene layer. The electron doping and Dirac point shifts calculated for the different structures are in agreement with the experimental measurements. In particular, the ${\mathrm{K}}_{4s}$ bands are shown to be sensitive to both the K intercalation and periodicity and are therefore suggested as a fingerprint for the location and ordering of the K dopants.

The alternating cluster process is a Poisson process the rate of which is modulated by an underlying two-state process. We derive the power spectral density of the alternating cluster process; besides random noise we obtain excess noise due to the impact of modulation.

The growth process of inner-shell tubes from C 60 peapods and ferrocene (FeCp 2 ) filled single-wall carbon nanotubes was studied with Raman spectroscopy and X-ray diffraction (XRD). In the peapod case, it is shown that the Raman signal of the fullerenes decays about a factor five faster than the XRD peak of the 1D fullerene chain. The growth of the inner-shell tubes coincides well with the 1D chain decay. In the FeCp 2 case, the inner tubes grow already at 600 °C in about one hour. Additionally, even for the same starting material, the inner-outer tube pair distribution is different than for C 60 based inner tubes.

We have synthesized double wall carbon nanotubes (DWNTs) with few defects and little amorphous carbon by hot wall chemical vapor deposition (CVD) of alcohol. Catalysts for the DWNT growth were made from cobalt and molybdenum acetates. Scanning electron microscopy, transmission electron microscopy, multi frequency resonance Raman spectroscopy and optical absorption spectroscopy were used for characterization of the product with regard to DWNT yield, the nanotube diameter distribution, defect concentration and amorphous carbon content. Base pressures lower than 1 × 10 −5 mbar in the CVD reactor considerably suppress defects in the DWNTs. Optimized growth conditions for DWNT formation are presented.

The synthesis of high quality isotope engineered SWCNT by means of laser ablation and the use of Pt-Rh-Re catalyst mixtures has been established. Optical absorption and Raman spectroscopy as well as transmission electron microscopy are utilized to characterize the obtained SWCNTs with regard to purity and yield. The absence of any ferromagnetic materials, as well as the remarkably low abundance of amorphous carbon renders this material ideal for magnetic studies. The controlled augmentation of 13 C is conveniently confirmed by phonon softening and broadening observed in Raman spectroscopy. Isotope labelling at constant sample quality was achieved in the whole range from 1% 13 C up to 98% 13 C.

We discuss here how the trigonal warping effect of the electronic structure is relevant to optical processes in graphite and carbon nanotubes. The electron-photon, electron-phonon, and elastic scattering matrix elements have a common factor of the coefficients of Bloch wave funtions of the A and B atoms in the graphite unit cell. Because of the three fold symmetry around the Fermi energy point (the K or K′ point), the matrix elements show a trigonal anisotropy which can be observed in both resonance Raman and photoluminescence spectroscopy. This anisotropy is essential for understanding the chirality dependence of the Raman intensity and the optical response of single wall carbon nanotubes.

The second order Raman signals around the G′-band region of graphite and carbon nanotubes have been investigated at more than 15 excitation laser lines. Two distinct Raman bands have been observed around 2700 cm−1; a prominent one is due to the so-called G′-band and the other is a weak band around 2450 cm−1. Both two bands can be from the double resonance process involving two phonons around the K-point in the phonon dispersion of a two-dimensional graphite. The 2450 cm−1-band has exhibited little power dependence, whereas the intensity of G′-band has shown large photon energy dependence as already reported. The 2450 cm−1-band and the G′-band correspond to non-dispersive q = 0 and fully-dispersive q = 2k, respectively. From the phonon dispersion and the corresponding phonon frequency, the 2450 cm−1-band can be assigned as an overtone mode of LO phonon (i.e. 2LO). This is revealed by calculated Raman spectra of graphite with proper electron–phonon matrix elements. The present study is the first report on the origin and assignment of the 2450 cm−1-band, which is based on the double resonance Raman scattering.

The electron–phonon (e–ph) interaction and the relaxation time of photo-excited electrons are calculated in graphite within the tight-binding scheme. The e–ph matrix element thus obtained, shows anisotropy in k-space. The calculated relaxation time is of the same order of magnitude as the experimental one. Moreover, below an energy close to the Fermi energy, the absorption rate exceeds the emission rate, which indicates that graphite can emit far infra-red electro-magnetic waves by absorbing heat. We also compare this result with Planck's formula for black-body radiation.

We calculated the resonance condition for the radial breathing Raman mode for single wall carbon nanotube (SWNT) bundles for light polarization parallel and perpendicular to the tube axis. The radial breathing modes that are not observed in isolated SWNTs, but are observed in SWNT bundles, are assigned to a resonance process for light with perpendicular polarization. Asymmetry between the valence and conduction π energy bands becomes essential for obtaining resonance conditions. We find that due to a high joint density of states, armchair SWNTs have the largest optical transition intensities.

The optical absorption matrix element as a function of one-dimensional (1D) wave vector k, and subband index μ of a single wall carbon nanotube is given analytically for linearly polarized light with polarization parallel to the nanotube axis. For armchair nanotubes, it is found that the optical transitions for non-degenerate A symmetry bands are forbidden over the whole 1D k region and the transitions for all other bands are also forbidden at the k = 0 point. Near the Fermi level, the absorption for all metallic nanotubes is found to be approximately zero. For both metallic and semiconducting nanotubes, it is found that the absorption matrix element has a maximum absolute value at the van Hove singularity (vHS) k point around the Fermi energy for each band. The absorption dependence on diameter and chiral angle is also presented for semiconducting nanotubes. For light polarization perpendicular to the nanotube axis, on the other hand, the absorption for nanotubes is generally weak near a vHS.

We investigate the N = 9 atoms wide armchair-type graphene nanoribbons (9-AGNRs) by performing a comprehensive spectroscopic and microscopic characterization of this novel material. In particular, we use X-ray photoelectron, near edge X-ray absorption fine structure, scanning tunneling, polarized Raman and angle-resolved photoemission (ARPES) spectroscopies. The ARPES measurements are aided by calculations of the photoemission matrix elements which yield the position in k space having the strongest photoemission cross section. Comparison with well-studied narrow N = 7 AGNRs shows that the effective electron mass in 9-AGNRs is reduced by two times and the valence band maximum is shifted to lower binding energy by ∼0.6 eV. In polarized Raman measurements of the aligned 9-AGNR, we reveal anisotropic signal depending upon the phonon symmetry. Our results indicate the 9-AGNRs are a novel 1D semiconductor with a high potential in nanoelectronic applications.

We report on the evaluation of the distribution of diameters for nanotube samples with a wide variation of mean diameters. Such results were obtained from a detailed analysis of the radial breathing mode Raman response and compared to results obtained from an evaluation of optical spectra and X-ray diffraction pattern. The evaluation of the Raman data needs a well refined analysis as the experimental analysis exhibits a rather complicated and oscillating relation between response and exciting laser. Both, an exact calculation where the density of states was considered explicitly and an approximate calculation were applied. Both models used for the analysis are able to explain several unexpected results from the experiment such as the oscillating behavior of the spectral moments, unusual discontinuities in the first moments of the Raman response for excitation in the IR, a fine structure for the response in optics and Raman, and an up shift of the RBM frequency as compared to qualified ab initio calculations. In detail the first moment and the variance of the spectra were used for the evaluation of the diameter distribution. To obtain good results between experimental and theoretical oscillation pattern the transition energy between the first two van Hove singularities had to be scaled up which is considered as a result from coulomb interaction of the electrons in the tubular material. On the other hand the analysis does not only allow to determine the mean value and the width of the diameter distribution but yields also a value for the average bundle diameters or, alternatively, the strength of the tube-tube interaction. The model used for the analysis of the Raman data is also appropriate to analyze the optical response, at least for the spectral range from 0.5 eV to 3.5 eV. The fine structure in the response for the transitions between the three lowest van Hove singularities is well reproduced and the mean tube diameters and their distribution is obtained in very good agreement with the results from the Raman analysis. From the X-ray analysis the same mean values and comparable distributions for the tube diameters were received whereas the bundle diameters could not be retained with high precision in this case.

1/f fluctuations have been extensively observed in various fields including both biology and physics. Recently, a cluster point process has been successfully applied to modeling the physically and the physiologically observed series of events which exhibit 1/f fluctuations. In this paper, the higher-order spectra up to the 3rd order are derived for the general cluster point processes whose primary and secondary processes are renewal according to the heuristic shot noise approach. As far as the cluster point process whose primary process is Poissonian, the results coincide with those obtaind by the probability generating functional. In the context of 1/f fluctuations, the power spectral densities (PSD) and the bispectra are given for varied parameters, especially for the power law distribution of cluster size. In addition to the rising landscape in the lower frequency range, these 2nd- and 3rd-order spectra are shown to have undulating structures that reflect the periodicity of event occurrence within the clusters, which indicates that there are quadratic correlations between the dominant frequency components that construct the 1/f profile in the PSD. Although several point process models that can produce the 1/f PSD have been proposed, the bispectra could be a possible measure for selecting an appropriate model from these candidates and may contribute to identifying the generation mechanism of the 1/f fluctuation.

We investigate, with high-resolution angle-resolved photoemission spectroscopy, the spectral function of potassium-doped quasi-free-standing graphene on Au. Angle-dependent x-ray photoemission and density functional theory calculations demonstrate that potassium intercalates into the graphene/Au interface, leading to an upshift of the K-derived electronic band above the Fermi level. This empty band is what makes this system perfectly suited to disentangle the contributions to electron-phonon coupling coming from the pi band and K-derived bands. From a self-energy analysis we find an anisotropic electron-phonon coupling strength lambda of 0.1 (0.2) for the K Gamma (K M) high-symmetry directions in momentum space, respectively. Interestingly, the high-energy part of the Eliashberg function which relates to graphene's optical phonons is equal in both directions but only in K M does an additional low-energy part appear. (Less)

We report high-resolution scanning tunneling microscopy and spectroscopy of hydrogenated, quasi-free-standing graphene. For this material, theory has predicted the appearance of a midgap state at the Fermi level, and first angle-resolved photoemission spectroscopy (ARPES) studies have provided evidence for the existence of this state in the long-range electronic structure. However, the spatial extension of H defects, their preferential adsorption patterns on graphene, or local electronic structure are experimentally still largely unexplored. Here, we investigate the shapes and local electronic structure of H impurities that go with the aforementioned midgap state observed in ARPES. Our measurements of the local density of states at hydrogenated patches of graphene reveal a hydrogen impurity state near the Fermi level whose shape depends on the tip position with respect to the center of a patch. In the low H concentration regime, we further observe predominantly single hydrogenation sites as well as extended multiple C-H sites in parallel orientation to the lattice vectors, indicating an adsorption at the same graphene sublattice. This is corroborated by ARPES measurements showing the formation of a dispersionless hydrogen impurity state which is extended over the whole Brillouin zone.

There has been considerable recent interest in density functionals incorporating random phase approximation (RPA) ground-state correlation. By virtue of its full nonlocality, RPA correlation is compatible with exact Hartree-Fock-type exchange and describes van der Waals interactions exceptionally well [B. G. Janesko et al., J. Chem. Phys. 130, 081105 (2009); J. Chem. Phys. 131, 034110 (2009)]. One caveat is that RPA correlation contains one-electron self-interaction error, which leads to disturbingly large correlation energies in the stretched bond situation of, e.g., H(2)(+), He(2)(+), or Ne(2)(+). In the present work, we show that inclusion of second-order screened exchange rectifies the aforementioned failure of RPA correlation. We present a large number of molecular benchmark results obtained using full-range as well as long-range corrected hybrids incorporating second-order screened exchange correlation. This correction has a generally small, and sometimes undesirable, effect on RPA predictions for chemical properties, but appears to be very beneficial for the dissociation of H(2)(+), He(2)(+), and Ne(2)(+).

PACS number s : 71.38. k, 71.10. w, 79.60. i.-- et al., The two-dimensional mapping of the phonon dispersions around the K point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at K.We observe an almost degeneracy of the three TO-, LA-, and LO-derived phonon branches and a strong phonon trigonal warping. Correlation effects renormalize the Kohn anomaly of the TO mode, which exhibits a trigonal warping effect opposite to that of the electronic band structure. We determined the electron-phonon coupling constant to be 166 eV/Å 2 in excellent agreement to GW calculations. These results are fundamental for understanding angle-resolved photoemission, doubleresonance Raman and transport measurements of graphene-based systems., A.G. acknowledges an APART grant from the Austrian Academy of Sciences and a Marie Curie Reintegration grant ECO-GRAPHENE from the EU. J.S. acknowledges support from Spanish MICINN Grants No. MAT2007-60087 and No. ENE2008-04373 and Generalitat de Catalunya Grant No. 2005SGR00535 . A.R. and L.W. are funded by Spanish MEC Grant No. FIS2007-65702-C02-01 , “Grupos Consolidados UPV/EHU and DIPC del Gobierno Vasco” IT- 319-07 and EC-I3 ETSF project Contract No. 211956 .

The full three-dimensional dispersion of the pi bands, Fermi velocities, and effective masses are measured with angle-resolved photoemission spectroscopy and compared to first-principles calculations. The band structure by density-functional theory underestimates the slope of the bands and the trigonal warping effect. Including electron-electron correlation on the level of the GW approximation, however, yields remarkable improvement in the vicinity of the Fermi level. This demonstrates the breakdown of the independent electron picture in semimetallic graphite and points toward a pronounced role of electron correlation for the interpretation of transport experiments and double-resonant Raman scattering for a wide range of carbon based materials.

The mesencephalic reticular formation (MRF) neurons are regarded as contributing to the activation of the celebral cortex. In this paper, the statistical features of single neuronal activities in MRF of cat during dream sleep are investigated; the neuronal spike train exhibits 1/f fluctuations. Counting statistics is applied to the neuronal spike train giving rise to a variance/mean curve which follows at μ-law. For an interpretation of these findings, the clustering Poisson process is applied which not only gives rise to at μ-law but also suggests a generation mechanism. The MRF neuronal activities are closely fitted by the clustering Poisson process and the underlying statistical parameters can be estimated. These findings strongly suggest that neuronal activities can be interpreted as superposition of randomly occuring clusters ( = bursts of spikes).

The low energy electron dispersion in graphite is measured by angle-resolved photoemission spectroscopy. The measured photoemission intensity maxima are compared to a tight-binding calculation of the electronic band structure. We observe a strong trigonal warping of the equi-energy contour which is well reproduced by the calculations. Furthermore we clearly show that the concept of Dirac Fermions breaks down for AB stacked graphite.

We regard a metallic resistor for temperatures T ≫ Θ D (= Debye temperature); under this condition, electron–phonon scattering is the dominant scattering mechanism. We investigate the noise properties under the supposition that phonon scattering is an intermittent process. Intermissions may be caused by an interaction between different phonon modes giving rise to a short break down of a mode. Due to such an intermittent behavior, we obtain — besides thermal noise — a 1/f noise component. Under equilibrium conditions, the 1/f noise term disappears. Under an applied electric field, the electrons are accelerated between collisions resulting in an additional 1/f noise component which can be compared with Hooge's relation. The predicted Hooge coefficient is α ≈ 3 ⋅ 10-3(τ off /τs)2 with τs being the mean electron phonon scattering time and τ off being the mean off-time ( = intermission). We also find 1/f fluctuations in the square of thermal noise suggesting that an applied current only probes 1/f fluctuations which are already present under equilibrium conditions.

In this Letter, we report the effects of strain on the electronic properties of single-wall carbon nanotubes. When we normalize the electronic transition energies to the corresponding values obtained for unstrained tubes, we obtain that, regardless of the tube diameter, all the data collapse onto universal curves following an n - m = constant family pattern. In the case of metallic tubes, quantum interference effects on the Raman cross section are predicted for strained tubes when the energies of the lower and the upper components have nearly the same values. Experimental evidence for the strain-induced Raman cross section changes is observed in single nanotube spectroscopy.

This paper presents an accurate analysis of (i) the electronic transition energies ${E}_{22}^{S}$ and ${E}_{11}^{M}$, (ii) the radial breathing mode (RBM) frequencies ${\ensuremath{\omega}}_{\mathrm{RBM}}$, and (iii) the corresponding RBM intensities from 40 small-diameter single-wall carbon nanotubes (SWNTs) in the diameter range $0.7l{d}_{t}l1.3\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$. The electronic transition energies $({E}_{ii})$ are initially considered from nonorthogonal tight-binding total-energy calculations. To account for ${d}_{t}$-dependent many-body effects, a logarithmic correction, as proposed by Kane and Mele, is applied to both ${E}_{22}^{S}$ and ${E}_{11}^{M}$. The remaining discrepancies between the experimental and theoretical ${E}_{ii}$ values are shown to be proportional to the chirality-dependent effective masses of electrons and holes, as obtained from the electron energy dispersion relations. Chirality dependent screening effects are also identified in metallic SWNTs. For the RBM frequencies, a small deviation from the linear $1∕{d}_{t}$ behavior is observed, and this deviation is analyzed based on a chirality-dependent mode softening effect due to nanotube curvature. For those interested in sample characterization, the $(n,m)$ dependence of the resonance intensities is also addressed, the experimental results being compared with theoretical predictions based on matrix elements calculations. This analysis suggests that the (7,5), (7,6), and (6,5) SWNTs are more abundant in sodium dodecyl sulfate wrapped HiPco SWNTs in aqueous solution, in agreement with results previously reported for SWNTs grown by the CoMoCAT or alcohol methods.

Experiments show that the $D$ bands of bundles of single wall carbon nanotubes have a fine structure, apparently consisting of more than one subband. Using the double resonance theory, we calculate for the first time the $D$ band for a sample of a given diameter distribution for seven different laser excitation energies in a wide range. In addition, a detailed theoretical explanation for the fine structure of the $D$ band is provided. The calculated results agree well with experiments and show that the main factors in determining the fine structure are an enhanced trigonal warping of the phonon dispersion, the presence of a diameter distribution in the sample, and\char22{}most importantly\char22{}the resonance from the Van Hove singularities.

The one-dimensional structure of carbon nanotubes leads to quantum confinement of the wave vectors for the electronic states, thus making the double resonance Raman process selective, not only of the magnitude, but also of the direction of the phonon wave vectors. This additional selectivity allows us to reconstruct the phonon dispersion relations of 2D graphite, by probing individual single wall carbon nanotubes of different chiralities by resonance Raman spectroscopy, and using different laser excitation energies. In particular, we are able to measure the anisotropy, or the trigonal warping effect, in the phonon dispersion relations around the hexagonal corner of the Brillouin zone of graphite.

In this work, we discuss the resonant Raman process in nanographites and carbon nanotubes, relating the most important Raman features to a first‐order (single resonance) or a second‐order (double resonance) process. We also show that, in the case of 1D systems, the term “resonance” has a more strict meaning and occurs when the energy of the photon does not simply coincide with the energy of a possible electron‐hole pair, but rather matches the separation between van Hove singularities in the valence and conduction bands.

The behavior of the disorder-induced D band in the Raman spectrum of single-wall carbon nanotubes (SWCNT's) was investigated both theoretically and experimentally. The measured maximum position of the D band for SWCNT bundles exhibits an oscillation superimposed on a linear shift, when the laser excitation energy ${E}_{\mathrm{laser}}$ varies in the range of 1.6--2.8 eV. We have shown theoretically by explicit integrations for the resonant Raman cross section that the D-band intensity of an isolated SWCNT has a sharp maximum when ${E}_{\mathrm{laser}}$ of either the incoming or the scattered photon matches a van Hove singularity in the joint density of states. This ``resonance'' must be considered in addition to the double resonance from a scattering by an impurity. Calculating the D band of a superposition of all the 114 SWCNT's within a given diameter range, both the shift and the oscillation in the experimentally observed spectra were reproduced.

The disorder induced D band and its overtone, the D* band (not disorder induced, sometimes also called G’) in the Raman spectrum of single wall carbon nanotubes (SWCNTs) were investigated theoretically and experimentally. The measured peak positions vs. laser excitation energy (Elaser) exhibit an oscillation superimposed on a linear shift. We have shown theoretically that the D‐band intensity of an isolated SWCNT has a sharp maximum when Elaser of either the incoming or the scattered photon matches a van Hove (vH) singularity in the joint density of states. Calculating the D and D* bands of a bundle of over 100 different SWCNTs both the shift and the oscillation in the experimental spectra were reproduced.

The possible semiconducting device use of single wall carbon nanotubes (SWNTs) requires a technique for the determination of the exact structure of the nanotubes assembled in the device configuration. Raman spectroscopy has been established as a precise and non-destructive tool for the characterization of graphitic nanostructures. Double resonance theory, which is used to explain the dispersive nature of the Raman bands, has attracted much attention for its potential use for the characterization of the electronic and phonon spectra of these nanostructures. Dispersive features in the Raman spectra of low dimensional graphitic materials, such as carbon nanotubes, can be used to measure directly the anisotropy, or the trigonal warping effect, in the phonon dispersion relations about the hexagonal corner of the Brillouin zone (BZ) of graphite.