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In this work, the following coatings were obtained by magnetron sputtering of (MoTaNbZrHf)SiB and SiBC targets: single-layer (MoTaNbZrHf)SiB, double- and multilayer (MoTaNbZrHf)SiB/SiBC, and nanocomposite (MoTaNbZrHf)-Si-BC coatings. Particular attention was paid to studying the effect of increased silicon content on the structure and oxidation resistance of developed coatings. Results showed that single-layer and nanocomposite coatings have a homogeneous structure with a uniform distribution of elements across the thickness. Double- and multilayer coatings contained (MoTaNbZrHf)-Si-B/Si-B-C layers with a thickness of 9.1/3.9 and 1.7/0.6 μm, respectively. Introduction of additional silicon-containing phases into the composition of (MoTaNbZrHf)-Si-B coatings led to a decrease in the specific mass change from –3.1 to 0.15–0.20 mg/cm2 at a temperature of 1000°C. Annealing at a temperature of 1500°C showed that the double-layer (MoTaNbZrHf)-Si-B/Si-B-C coatings have a minimum oxide layer thickness of 9.2 μm and a specific mass loss of 0.95 mg/cm2, which is 1.5 and 1.8 times lower than the values obtained for the single-layer (MoTaNbZrHf)-Si-B coating. At 1600°C, the single-layer (MoTaNbZrHf)-Si-B coating was completely oxidized, while the double- and multilayer (MoTaNbZrHf)-Si-B/Si-B-C coatings were partially preserved, which is due to the high silicon content in their composition. [ABSTRACT FROM AUTHOR]

This work is devoted to the production of a ceramic target (ZrSi2–ZrB2–MoSi2)/Cr by hot pressing of products of self-propagating high-temperature synthesis and deposition of coatings in the Zr–Si–Mo–B system by DC magnetron sputtering and high-power pulsed magnetron sputtering. The composition and structure of the initial powder mixtures, SHS products, a two-layer functionally graded target, and coatings deposited during its sputtering have been studied. It is shown that the developed target (ZrSi2–ZrB2–MoSi2)/Cr can be successfully used to obtain coatings with a dense homogeneous defect-free structure, including at high-energy sputtering regimes, peak current of 50 A, and peak power of 50 kW. [ABSTRACT FROM AUTHOR]