1. Electron thermometry and refrigeration with doped silicon and superconducting electrodes.
- Author
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Buonomo, B., Leoni, R., Castellano, M. G., Mattioli, F., Torrioli, G., Di Gaspare, L., and Evangelisti, F.
- Subjects
SILICON ,ELECTRODES ,SUPERCONDUCTORS ,ALUMINUM - Abstract
We have fabricated and characterized at low temperature, down to 0.32 K, tunnel junctions made by a thin film of heavily doped silicon in contact with superconducting electrodes through Schottky barriers. Doped silicon films were chemical vapor deposited on silicon-on-insulator substrates and laterally dry etched in mesas. Aluminum or, alternatively, niobium contacts were deposited on the mesas. Below the superconducting critical temperature T[sub c], an energy gap opens in the superconductor and the current–voltage characteristics become nonlinear and strongly sensitive to temperature changes. We have also characterized the heavily doped silicon in terms of the electron–phonon thermal decoupling by cooling the electron gas by means of aluminum–silicon–aluminum structures. With Nb electrodes, we have observed an anomaly of the electrical differential conductance at zero voltage and a larger electron dissipation, as a result of a less opaque barrier. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2003
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