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We investigated the effect of H2S annealing for glass/Ag/Sn and glass/Ag/SnS precursor thin films deposited by vacuum evaporation. The glass/Ag/Sn and glass/Ag/SnS stacked precursors were deposited on soda-lime glass substrates at 300 °C. After the evaporation, the stacked precursors were annealed from 300 to 500 °C for 60 min in H2S atmosphere. A Ag8SnS6 thin films can be prepared with Ag2SnS3 and SnS2 crystals. The grain size of the crystals in the thin films using a glass/Ag/SnS stacked precursor was larger than that using a glass/Ag/Sn stacked precursor. The absorption coefficients and band-gap energy of Ag-Sn-S thin films with Ag8SnS6, Ag2SnS3, and SnS2 crystals were above 104 cm−1 and approximately 1.3 eV, respectively. [ABSTRACT FROM AUTHOR]

Abstract: We characterized AgInS2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400°C, diffraction peaks were observed only for the chalcopyrite AgInS2 phase. The chemical composition of the thin films annealed at 400°C was 26.5at% Ag, 23.8at% In, and 49.7at% S. PL spectra of the AgInS2 thin films at 10.7K showed peaks at 1.70, 1.80, and 1.83eV. The PL peak at1.80eV was attributed to sulfur deficiency. [Copyright &y& Elsevier]

(Cu,Ag)2SnS3 thin films and solar cells are prepared by sulfurization of KF/Sn/(Cu + Ag) stacked precursors in a sulfur and tin mixing atmosphere. Their properties are investigated. Stacked KF/Sn/(Cu + Ag) precursors are deposited on Mo/soda lime glass substrate by sequential evaporation of Cu + Ag, Sn elements, and KF. The molar ratios of the evaporation materials are held constant at (Cu + Ag):Sn = 1.0:0.6 and Ag/(Cu + Ag) = 0.05, and the KF/Cu molar ratio is changed from 0 to 0.05. The precursors are crystallized by annealing for 30 min at 570 °C in a sulfur and tin mixing atmosphere. The compositions are approximately constant, and the dependence of the composition ratio on the KF addition quantity is not observed. For all samples, the X‐ray diffraction patterns and the Raman spectra corresponding to CATS are obtained. The values of Voc increased with increasing KF/Cu molar ratio until KF/Cu = 0.03. The best solar cell in this study showed a Voc of 248 mV. [ABSTRACT FROM AUTHOR]

In this paper, we fabricated thin films composed of (Cu,Ag) 2 SnS 3 using a sulfurization process for photovoltaic devices. The stacked NaF / Sn / (Ag + Cu) precursor was deposited by sequential evaporation of Ag, Cu, and Sn elements and NaF followed by crystallization in a mixed sulfur/tin atmosphere for 30 min at 530 °C and 570 °C, respectively. The X-ray diffraction patterns in all samples exhibited several peaks near the diffraction line of the monoclinic Cu 2 SnS 3 (CTS) structure. Moreover, the lattice spacing increased according to Vegard's law as the [Ag] / ([Ag] + [Cu]) molar ratio in the films increased up to a value of approximately 0.05. Based on the results of scanning electron microscopy studies, the grain sizes for the produced thin films increased as the [Ag] / ([Ag] + [Cu]) molar ratio increased in the evaporation materials, while the performance of the solar cell fabricated with [Ag] / ([Ag] + [Cu]) = 0.05 and a sulfurization temperature of 570 °C corresponded to an open-circuit voltage of 244 mV, a short-circuit current density of 36.9 mA/cm 2 , a fill factor of 0.45, and an efficiency of 4.07%. [ABSTRACT FROM AUTHOR]