Search

Probing the time evolution of the terahertz electric field within subwavelength dimensions plays a crucial role in observing the nanoscale lightwave interactions with fundamental excitations in condensed-matter systems and in artificial structures, such as metamaterials. Here, we propose a novel probing method for measuring terahertz electric potentials across nanogaps using a combination of optical and terahertz pulse excitations. To achieve this, we employ ring-shaped nanogaps that enclose a metallic island, allowing us to capture tunneling charges when subjected to terahertz electromagnetic pulse illumination. By controlling and manipulating the terahertz tunneling charges through a focused optical gate pulse, we can obtain the terahertz potential strength as a function of spatial coordinates and time delays between pulses. To accurately quantify the time evolution of terahertz electric potential across quantum barriers, we carefully calibrate the recorded nonlinear tunneling current. Its on-resonance and off-resonance behaviors are also discussed, providing valuable insights into the antenna's characteristics and performance. [ABSTRACT FROM AUTHOR]

Terahertz plasmonics is one of the fascinating research fields that includes diverse applications in nonlinear terahertz optics and nano-optics, as well as studies about strong localization and enhancement of millimeter waves. Recent advanced lithography techniques enable one to reach the confinement scale of electromagnetic waves down to subnanometer, which corresponds to wavelength/10 000 000. In particular, the strong electric-field enhancement in metal gaps can produce atomically strong field exceeding ∼10 MV/cm in a picosecond time scale. In this article, we review the strong localization and enhancement of electromagnetic waves in terahertz frequency ranges achieved by subwavelength metal structures. Based on understanding the underlying capacitive coupling and antenna effects, we focus on the field confinement and enhancement of various metal structures such as slit, slot antenna, and dipole antenna. We also give a brief introduction about near-field detection methods. [ABSTRACT FROM AUTHOR]

With recent advances in nanofabrication technology, various metallic gap structures with gap widths reaching a few to sub-nanometer, and even 'zero-nanometer', have been realized. At such regime, metallic gaps not only exhibit strong electromagnetic field confinement and enhancement, but also incorporate various quantum phenomena in a macroscopic scale, finding applications in ultrasensitive detection using nanosystems, enhancement of light–matter interactions in low-dimensional materials, and ultralow-power manipulation of electromagnetic waves, etc. Therefore, moving beyond nanometer to 'zero-nanometer' can greatly diversify applications of metallic gaps and may open the field of dynamic 'gaptronics.' In this paper, an overview is given on wafer-scale metallic gap structures down to zero-nanometer gap width limit. Theoretical description of metallic gaps from sub-10 to zero-nanometer limit, various wafer-scale fabrication methods and their applications are presented. With such versatility and broadband applicability spanning visible to terahertz and even microwaves, the field of 'gaptronics' can be a central building block for photochemistry, quantum optical devices, and 5/6G communications. [ABSTRACT FROM AUTHOR]

Photo‐excited graphene has a positive (semiconductor‐like) or negative (metal‐like) response depending on the Fermi level, which is tuned by gate control, doping, and growth. Both negative and positive photoconductive responses have a potential application as an ultrafast optical modulator in the control of light transmission. However, it is challenging to achieve a high on/off ratio in the photo‐excited graphene because of a small absorption of electromagnetic waves and a limitation of photo‐induced conductivity change. Here, the negative‐type high on/off ratio and ultrafast terahertz modulation are experimentally demonstrated using graphene/metal nanoslot antennas. When the graphene covers the nanoslot antennas, the terahertz waves are completely blocked (off‐state). This perfect extinction results from the enhanced intraband absorption in graphene by strong localized fields near the nanogap. However, once the optical pump is applied to the graphene/nanoslot antennas, terahertz transmission becomes recovered resonantly (on‐state) due to the photo‐induced transparency of graphene that leads to a distinctive modulation from off‐ to on‐resonance. Furthermore, the fast carrier relaxation induced by strong terahertz field‐driven carrier redistribution is responsible for the faster modulation of transient terahertz transmission. The results will open up pathways toward negative‐response terahertz modulation applications with high on/off ratio and ultrafast time scale. [ABSTRACT FROM AUTHOR]

Slot-type nanogaps have been widely utilized in transmission geometry because of their advantages of exclusive light funneling and exact quantification of near-field enhancement at the gap. For further application of the nanogaps in electromagnetic interactions with various target materials, complementary studies on both transmission and reflection properties of the nanogaps are necessary. Here, we observe an anomalous extinction of terahertz waves interacting with rectangular ring-shaped sub-30 nm wide gaps. Substrate works as an index matching layer for the nanogaps, leading to a stronger field enhancement and increased nonlinearity at the gap under substrate-side illumination. This effect is expressed in reflection as a larger dip at the resonance, caused by destructive interference of the diffracted field from the gap with the reflected beam from the metal. The resulting extinction at the resonance is larger than 60% of the incident power, even without any absorbing material in the whole nanogap structure. The extinction even decreases in the presence of an absorbing medium on top of the nanogaps, suggesting that transmission and reflection from nanogaps might not necessarily represent the absorption of the whole structure. [ABSTRACT FROM AUTHOR]

We demonstrate remarkably strong nonlinear terahertz (THz) effects in an intrinsic GaAs wafer patterned with a nanometer-width slot antenna array. The antenna near-field reaches 20 MV/cm due to the huge field enhancement in the plasmonic nano-structure (field enhancement factor, α ≅ 50). The THz fields are strong enough to generate high density free carriers (Ne > 1017 cm-3) via interband excitations associated with impact ionizations and thus to induce large absorption of the THz radiation (>35%). The nonlinear THz interactions take place in the confined region of nanometer-scale layer adjacent to the antenna. [ABSTRACT FROM AUTHOR]