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A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12., Comment: 46 pages including 17 figures

The model strongly correlated electron system Ho0.8Lu0.2B12 which demonstrates a cooperative Jahn-Teller instability of the boron sub-lattice in combination with rattling modes of Ho(Lu) ions, dynamic charge stripes and unusual antiferromagnetic (AF) ground state has been studied in detail at low temperatures by magnetoresistance, magnetization and heat capacity measurements. Based on received results it turns out that the angular H-fi-T magnetic phase diagrams of this non-equilibrium AF metal can be reconstructed in the form of a Maltese cross. The dramatic AF ground state symmetry lowering of this dodecaboride with fcc crystal structure can be attributed to the redistribution of conduction electrons which leave the RKKY oscillations of the electron spin density to participate in the dynamic charge stripes providing with extraordinary changes in the indirect exchange interaction between magnetic moments of Ho3+ ions and resulting in the emergence of a number of various magnetic phases. It is also shown that the two main contributions to magnetoresistance in the complex AF phase, the (i) positive linear on magnetic field and the (ii) negative quadratic component can be separated and analyzed quantitatively, correspondingly, in terms of charge carrier scattering on spin density wave (5d) component of the magnetic structure and on local 4f-5d spin fluctuations of holmium sites., Comment: 45 pages, 16 figures

Separating between ordinary (OHE) and anomalous (AHE) Hall effect in the paramagnetic phase of Mn$_{1-x}$Fe$_{x}$Si reveals OHE sign inversion associated with the hidden quantum critical (QC) point $x^*\sim0.11$. The semimetallic behavior at intermediate Fe content leads to verifiable predictions in the field of fermiology, magnetic interactions and QC in Mn$_{1-x}$Fe$_{x}$Si. The change of electron and hole concentrations is considered as a driving force for tuning the QC regime in Mn$_{1-x}$Fe$_{x}$Si via modifying of RKKY exchange interaction within the Heisenberg model of magnetism., 5 pages, 4 figures, 1 supplement

Based on low temperature resistivity, heat capacity and magnetization investigations we show that the unusually strong suppression of superconductivity in Lu$_x$Zr$_{1-x}$B$_{12}$ BSC-type superconductors in the range $x$$, Comment: 4 pages, 6 figures

The magnetic inhomogeneity of the A-phase in MnSi chiral magnet is identified for the first time from the precise measurements of transverse magnetoresistance (MR) anisotropy. The area inside the A-phase (A-phase core) corresponds to isotropic MR having no confinement to the MnSi crystal lattice. Per contra, the MR becomes anisotropic both on the border of the A-phase and in other magnetic phases, the strongest magnetic scattering being observed when external magnetic field applied along [001] or [00-1] directions. We argue here that the established MR features prove the presence of two different types of the skyrmion lattices inside the A-phase, and the dense skyrmion state of the A-phase core is built from individual skyrmions similar to Abrikosov-type magnetic vortexes., Comment: 5 pages, 3 figures

The magnetoresistance (MR) $\Delta \rho/\rho$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $\Delta\rho/\rho$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-\Delta \rho/\rho$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$\mu_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $\Delta \rho/\rho$$\sim$$\mu_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $\mu_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $\Delta\rho/\rho=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components., Comment: 25 pages, 19 figures

The magnetization field and temperature dependences in the paramagnetic phase of Mn1-xFexSi solid solutions with x, 21 page, 7 figures; submitted to PRB

The angular, temperature and magnetic field dependences of Hall resistance roH for the rare-earth dodecaboride solid solutions Tm1-xYbxB12 have been studied in a wide vicinity of the quantum critical point (QCP) xC~0.3. The measurements performed in the temperature range 1.9-300 K on high quality single crystals allowed to find out for the first time in these fcc compounds both an appearance of the second harmonic contribution in ro2H at QCP and its enhancement under the Tm to ytterbium substitution and/or with increase of external magnetic field. When the Yb concentration x increases a negative maximum of a significant amplitude was shown to appear on the temperature dependences of Hall coefficient RH(T) for the Tm1-xYbxB12 compounds. Moreover, a complicated activation type behavior of the Hall coefficient is observed at intermediate temperatures for x>0.5 with activation energies Eg~200K and Ea~55-75K in combination with the sign inversion of RH(T) at low temperatures in the coherent regime. The density of states renormalization effects are analyzed within the variation of Yb concentration and the features of the charge transport in various regimes (charge gap formation, intra-gap manybody resonance and coherent regime) are discussed in detail in Tm1-xYbxB12 solid solutions., 38 pages including 10 figures, 70 references

Hall effect was studied on the single crystals of antiferromagnets PrB$_6$ and NdB$_6$ at temperatures 2K$, Comment: 17 pages,7 figures

The work presents experimental results of precision magnetoresistance dr(H,T) measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6 and substitutional solid solutions CeCu6-xAux (x=0.1 and 0.2) and Ce(Al0.95M0.05)2 (M - Co, Ni). The research was performed in a wide range of temperatures (1.8-30K) and magnetic fields (up to 80 kOe). The data analysis indicates that the most consistent interpretation of magnetoresistance of both paramagnetic and magnetically ordered Ce-based systems with strong electron correlations can be obtained through the approach developed by K.Yosida (Phys.Rev., 107, 396(1957)) that considers charge carrier scattering on localized magnetic moments in metallic matrix. Within this approach local magnetic susceptibility hiloc(H,T0)=(1/H d(dr/r)/dH)1/2 has been estimated directly from the magnetoresistance data dr/r=f(H,T0). As a result, two additional contributions to magnetoresistance in Ce-based magnetic intermetallides have been established and classified. The procedure allowed to determine the peculiarities of magnetic phase ht diagram as well as to reveal the electron density of states renormalization effects in a wide vicinity of quantum critical point in the archetypal Ce-based systems with strong electron correlations.

Precision measurements of the Hall effect have been carried out for both archetypal heavy fermion compound - CeCu6 and exemplary solid solutions CeCu6-xAux (x= 0.1 and 0.2) with quantum critical behavior. The experimental results have been obtained by technique with a sample rotation in magnetic field in the temperature range 1.8-300K. The experiment revealed a complex activation type dependence of the Hall coefficient RH(T) in CeCu6 with activation energies Ea1/kB = 110K and Ea2/kB = 1.5K in temperature ranges 50-300K and 3-10K, respectively. Microscopic parameters of charge carriers transport (effective masses, relaxation time) and localization radii ap1,2* of heavy fermions (ap1*(T>50K)= 1.7 A and ap2*(T

Precision measurements of charge transport parameters (resistivity, Hall and Seebeck coefficients) have been carried out on high-quality single-crystals of cerium hexaboride in a wide temperature range 1.8-300 K. It is shown that in the temperature interval of 5 K < T < T* = 80 K the magnetic contribution in resistivity obeys the power law rm = T -1/n, which corresponds to the regime of weak localization of charge carriers with the critical index 1/n = 0.39 +- 0.02. In the same temperature interval an asymptotic behavior of thermopower S = -lnT is found together with an essential decrease of the charge carriers mobility in CeB6. A negative Hall coefficient anomaly has been detected at liquid helium temperatures. The data obtained are compared with the results predicted by the Kondo-lattice model and discussed also in terms of the theory of excitonic ferromagnetism.

High precision measurements of the Hall effect have been carried out for archetypal heavy fermion compound - CeAl3 in a wide range of temperatures 1.8-300K. For the first time a complex activated behavior of the Hall coefficient in CeAl3 with activation energies Ea1/kB=220K and Ea2/kB=3.3K has been observed in the temperature intervals 50-300K and 10-35K respectively. At temperatures below the maximum of the Hall effect T