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Doping with various elements to the MgO film is better suited for increasing secondary electron emission coefficient γ. This allows the evolution of the luminous efficacy and the lifespan of the plasma-related devices. The resistance against ion sputtering is another critical issue for the prolongation of the lifespan. This research focuses on the effect of H-, Graphite -, Na-, Fe-and Zn -ion-doping on sputtering yields and numbers of vacancies created in MgO as a function of ion energy and incident angle. Our simulation have shown that the MgO doped exhibit better sputtering resistance and lower numbers of vacancies. [ABSTRACT FROM AUTHOR]

Graphene is a single layer thick consisted by honeycomb‐packed sp2 carbon atom; nanoporous graphene holds great promise in the application of filtration such as reverse osmosis method using a semipermeable membrane to remove ions, molecules, and larger particles from drinking water. The movement of molecules and ions can caused by a collision between the ions, molecules, and the graphene, so we can talk about the sputtering. In this work, we have studied the sputtering yield by Na and Cl ions to examine the potential and the challenges of osmosis membrane from graphene in order to predict the performance of the graphene membrane for use in the reverse osmosis method. [ABSTRACT FROM AUTHOR]