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In this work, we have successfully prepared the nano-coral to be intact with the mesoporous of Sn-HfO2 thin films through the (jet nebulizer spray pyrolysis) JNSP technique from different Sn (5, 10, 15 Wt.%) to improve the MIS Schottky diode Al/Sn-HfO2/n-Si. To achieve the phase transformations (monoclinic to orthorhombic) in pure hafnium oxide thin films, we have added the Sn ions as the composite at optimized temperature 600 °C. The XRD characteristic used to determine the structural parameters such as the phase, grain size for pure HfO2, and composite Sn-HfO2 films. The mesoporous with irregularly shaped balls and nano coral-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy have been determined from the UV Vis spectrum. The EDAX elementary analysis has confirmed the presence of Sn, Hf, O elements in each film. The XPS spectrum has confirmed Sn's presence and binding peak with a spin-orbit on the films' surface. I-V curves of forward and reverse bias determine the barrier height, ideality factor, and saturation currents from the thermionic emission theory. All the Al/Sn@HfO2/n-Si diode parameters are strongly improved after the incorporation of Sn ions. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured Zn@HfO 2 thin films were through the JNSP technique. • The mesoporous with irregular balls intact nanorods-like structured morphology was observed by FESEM images. • The band gap values are receded continuously after doping. • We have fabricated Al/Zn@HfO 2 /n-Si diode for various Zn concentration. • A minimum ideality factor was obtained for 15 wt% of MIS diode. In this work, we have prepared the nanorods are intact with mesoporous of Zn@HfO 2 thin films through the JNSP technique with different concentrations of Zn (5,10,15 Wt%) to improve the MIS Schottky diode Al/Zn-HfO 2 /n-Si performance. The XRD was used to determine the structural parameters such as the phase and grain size for both pure HfO 2 and Zn@HfO 2 composite films. The mesoporous with irregular balls and nano rod-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy were calculated from the UV–vis spectrum. The EDAX analysis has confirmed that the Zn, Hf and O percentages in both films. The XPS spectrum has confirmed Zn's presence and binding natural with a spin-orbit splitting on the films' surface. By the thermionic emission theory, I-V curves of forward and reverse bias are used to determine the barrier height, ideality factor and saturation currents. All the Al/Zn@HfO 2 /n-Si diode parameters are strongly improved after the incorporation of Zn ions. [ABSTRACT FROM AUTHOR]

The presence of high dielectric material between the metal and semiconductor interface played a significant role in many electronic device applications. In this work, we have fabricated Al/n-Si Schottky barrier diode by introducing nanostructured HfO 2 films as a middle layer with different substrate temperatures via JNSP technique. XRD analysis revealed significant phase change from amorphous to monoclinic phase while increasing substrate temperature. Through FESEM images, a porous structure and irregular sphere-like grains were observed. The optical energy band gap of the HfO 2 films has found to vary from 3.41 to 3.73 eV respectively. From I–V characterization, the obtained diode ideality factor was found to be decreasing and their corresponding barrier height increased with respect to substrate temperature. Particularly, the diode fabricated at 600 °C exhibited better ideality factor value (n = 3.4). We observed that the presence of highly dielectric films strongly improved the diode parameters, especially at high substrate temperature. • A nanostructured HfO2 thin films were prepared at various substrate temperature (400-600 °C) a low-cost spray pyrolysis. • A significant phase change was observed from amorphous to monoclinic while increasing the substrate temperature. • Micro-porous and ball-like grains have been recorded through FE-SEM micrographs. • The HfO2 film prepared at 600 °C shows maximum absorbance and minimum bad gap of 3.41 eV. • Al/HfO2/n-Si structured Schottky barrier diodes were fabricated with different substrate temperature. [ABSTRACT FROM AUTHOR]