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We show that an optimized growth of magnetic layer/non-magnetic layer stacks allows for the improvement of the spin-to-charge conversion efficiency. From the analysis of the voltage signal generated in spin pumping experiments due to the inverse spin Hall effect (ISHE) on Y3Fe5O12 (YIG)/Bi stacks, we have determined values for the spin Hall angle and the spin-diffusion length in Bi of 0.0068(8) and 17.8(9) nm, respectively. Based on these results, we have also studied the influence of aging on the spin-to-charge conversion efficiency by performing spin pumping experiments on YIG/Bi stacks after exposing the samples to ambient conditions for several days and up to 150 days. We have found that in YIG/Bi samples with Bi thicknesses around or below the spin-diffusion length, the ISHE voltage signal is still above 80% of its initial value after 100 days. [ABSTRACT FROM AUTHOR]

Spin Hall and Rashba–Edelstein effects, which are spin-to-charge conversion phenomena due to spin–orbit coupling (SOC), are attracting increasing interest as pathways to manage rapidly and at low consumption cost the storage and processing of a large amount of data in spintronic devices as well as more efficient energy harvesting by spin-caloritronics devices. Materials with large SOC, such as heavy metals (HMs), are traditionally employed to get large spin-to-charge conversion. More recently, the use of graphene (gr) in proximity with large SOC layers has been proposed as an efficient and tunable spin transport channel. Here, we explore the role of a graphene monolayer between Co and a HM and its interfacial spin transport properties by means of thermo-spin measurements. The gr/HM (Pt and Ta) stacks have been prepared on epitaxial Ir(111)/Co(111) structures grown on sapphire crystals, in which the spin detector (i.e., top HM) and the spin injector (i.e., Co) are all grown in situ under controlled conditions and present clean and sharp interfaces. We find that a gr monolayer retains the spin current injected into the HM from the bottom Co layer. This has been observed by detecting a net reduction in the sum of the spin Seebeck and interfacial contributions due to the presence of gr and independent from the spin Hall angle sign of the HM used. [ABSTRACT FROM AUTHOR]

Spin-to-charge conversion is a central process in the emerging field of spintronics. One of its main applications is the electrical detection of spin currents, and for this, the inverse spin Hall effect (ISHE) has become one of the preferred methods. We studied the thickness dependence of the ISHE in iridium oxide (IrO 2 ) thin films, producing spin currents by means of the spin Seebeck effect in γ − Fe 2 O 3 /IrO 2 bilayers prepared by pulsed laser deposition (PLD). The observed ISHE charge current density, which features a maximum as a consequence of the spin diffusion length scale, follows the typical behaviour of spin-Hall-related phenomena. By fitting to the theory developed by Castel et al., we find that the spin Hall angle θ SH scales proportionally to the thin film resistivity, θ SH ∝ ρ c , and obtains a value for the spin diffusion length λ IrO 2 of λ IrO 2 = 3.3 (7) nm. In addition, we observe a negative θ SH for every studied thickness and temperature, unlike previously reported works, which brings the possibility of tuning the desired functionality of high-resistance spin-Hall-based devices. We attribute this behaviour to the textured growth of the sample in the context of a highly anisotropic value of the spin Hall conductivity in this material. [ABSTRACT FROM AUTHOR]