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Temperature-dependent photoluminescence (PL) spectroscopy is employed to investigate the effects of exposure to ambient air on the optical property of Al-doped ZnO nanorods. Low temperature PL of the as-grown nanorods shows dominant D0X (excitons bound to neutral donors) emission at 3.363 eV and surface state-related emission at 3.310 eV. After exposure to ambient air, both of them vanish and the first LO phonon replica of free exciton is observed instead. It is proposed that surface adsorption and indiffusion of oxygen in ambient air result in surface modification and destruction of D0X complex. [ABSTRACT FROM AUTHOR]

The authors report on reproducible growth of ZnMgO quantum dots (QDs) by a metal organic chemical vapor deposition method. Mg is introduced into ZnO QDs, as confirmed by x-ray photoelectron spectroscopy and photoluminescence measurements. The size, density, and optical band gap of ZnMgO QDs can be well controlled by simply modulating the growth parameters. [ABSTRACT FROM AUTHOR]

Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Ω cm, Hall mobility of 2.65 cm2/V s, and hole concentration of 1.44×1017 cm-3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer. [ABSTRACT FROM AUTHOR]

p-type ZnO thin films have been realized by the In–N codoping method. Secondary ion mass spectroscopy revealed that the nitrogen incorporation was enhanced by the presence of indium in ZnO. The as-grown In–N codoped ZnO film shows acceptable p-type behavior at room temperature with high film quality. A conversion from p-type conduction to n type in a range of temperature was confirmed by Hall effect measurement. The lowest reliable room-temperature resistivity was found to be 3.12 Ω cm with a carrier concentration of 2.04×1018 cm-3 and a Hall mobility of 0.979 cm2 V-1 S-1. The p-type behavior is stable. [ABSTRACT FROM AUTHOR]

p-type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p-type sample shows a resistivity and hole concentration of 24.5 Ω cm and 7.48×1017 cm-3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n-type substrate to p-type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects. [ABSTRACT FROM AUTHOR]

p-type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Ω cm with a Hall mobility of 0.43 cm2/V s and carrier concentration of 2.25×1017 cm-3 for the N–Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. [ABSTRACT FROM AUTHOR]