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Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum are designed and produced. The scheme and topology are developed according to which matrix multiplexers with 640 × 512 elements at a pitch of 25 μm, which ensure operating modes at a clock frequency up to 10 MHz, are manufactured. Using a hybrid assembly method on indium bumps, a matrix photodetector with 640 × 512 elements at a pitch of 25 μm is produced. The best photodetector specimens are characterized by the following parameters: average NETD value <13 mK and the number of workable elements > 99.5%. [ABSTRACT FROM AUTHOR]

Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600-850 nm) of an epitaxial layer has been observed for Ga1 - xInxAsyP1 - y solid solutions (x = 0.86, y = 0.07-0.42) produced on InP by metal-organic vapor-phase epitaxy under lowered pressure, although the composition of the gas mixture, temperature, and pressure were maintained invariable in the course of the growth process. For different gas mixture compositions, the value of Δy and the manner of its variation were different. An analysis of the data obtained demonstrated that Δy is due to the deformations that appear in a growing layer because of the lattice mismatch with the substrate. [ABSTRACT FROM AUTHOR]

Processes are considered in which ultrathin layers of III-V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAsP, GaAsSb, and GaPSb layers with thicknesses of 10-20 nm and a content x of the embedded components of up to 0.04. [ABSTRACT FROM AUTHOR]

Epitaxial growth of AlGaInAsSb and AlCaAsSb solid solutions has been investigated. Epitaxial layers with the compositions 0.02 < u < 0.11, 0.88 < x < 0.93, and 0.88 < y < 0.98 have been grown on InAs substrates by metal-organic vapor-phase epitaxy at low pressure (76 Torr) and at the ratio of the sum of partial pressures of compounds of fifth-group elements to that for compounds of third-group elements V/III = 3.6-6. At a lattice mismatch of 1 × 10, the half-widths of the rocking curves for the best samples were 15 arcsec for substrates and 66 arcsec for layers. [ABSTRACT FROM AUTHOR]

The characteristics of the photodiodes based on Cd[sub x]Hg[sub 1-x]Te solid solutions with graded gap layers were calculated in the context of a one-dimensional diffusion-drift model. The parameters of the photodiodes were shown to be improved when the p-n junction was located in the near-surface graded gap region rather than in the central homogeneous section of the structure. The photodiodes with the n-type layer adjacent to the substrate were found to offer an advantage over the diodes with the p-layer close to the substrate in the case of illumination from the substrate side. [ABSTRACT FROM AUTHOR]

A new method based on solid-state substitution reactions is proposed for obtaining nanodimensional layers of GaAsP solid solutions on the surface of GaAs semiconductor crystals. The processed GaAs wafers exhibit a wide-bandgap optical window effect, whereby their room-temperature photoluminescence intensity increases by a factor of up to 25. [ABSTRACT FROM AUTHOR]

Processes of epitaxial growth of narrow-bandgap (with bandgap value E ≈ 0.3−0.48 eV) solid solutions GaInAsSb and InAsPSb on InAs substrates by metal-organic chemical vapor deposition at low pressure (76 Torr) are investigated. It is shown that, under chosen growth conditions, the InAsPSb epilayers have high crystalline quality, while the solid solutions GaInAsSb and InAsPSb have compositions close to InAs (0.86 < x < 0.93, 0.62 < y < 0.9, 0.17 < z < 0.26) and manifest photoluminescence at room temperature. [ABSTRACT FROM AUTHOR]

Nearly isoperiodic solitary Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y]/GaSb heterostructures, in which the composition of the solid solution should be found inside the region of spinodal decay (x ≤ 0.4), were grown by liquid-phase epitaxy from solution-melts enriched with antimony. On the basis of the results of a study of structural and luminescence properties of Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y]/GaSb heterostructures we have determined the main conditions ensuring reproducible growth of epitaxial layers, homogeneous in the composition of their solid solutions in the region where the existence of processes of spinodal and binodal decay have been theoretically predicted. It is shown that the magnitude and sign of the deformation which the layer undergoes during growth and also the thickness of the layer are the main factors influencing the properties of the growing GalnAsSb solid solutions in the spinodal-decay zone. [ABSTRACT FROM AUTHOR]