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This work mainly focuses on synthesizing and evaluating the efficiency of methylammonium lead halide‐based perovskite (MAPbX3; X=Cl, Br, I) solar cells. We used the colloidal Hot‐injection method (HIM) to synthesize MAPbX3 (X=Cl, Br, I) perovskites using the specific precursors and organic solvents under ambient conditions. We studied the structural, morphological and optical properties of MAPbX3 perovskites using XRD, FESEM, TEM, UV‐Vis, PL and TRPL (time‐resolved photoluminescence) characterization techniques. The particle size and morphology of these perovskites vary with respect to the halide variation. The MAPbI3 perovskite possesses a low band gap and low carrier lifetime but delivers the highest PCE among other halide perovskite samples, making it a promising candidate for solar cell technology. To further enrich the investigations, the conversion efficiency of the MAPbX3 perovskites has been evaluated through extensive device simulations. Here, the optical constants, band gap energy and carrier lifetime of MAPbX3 were used for simulating three different perovskite solar cells, namely I, Cl or Br halide‐based perovskite solar cells. MAPbI3, MAPbBr3 and MAPbCl3 absorber layer‐based devices showed ~13.7 %, 6.9 % and 5.0 % conversion efficiency. The correlation between the experimental and SCAPS simulation data for HIM‐synthesized MAPBX3‐based perovskites has been reported for the first time. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PSCs) have shown power conversion efficiency (PCE) up to 25.5%, but they are still struggling with their poor environmental stability. We have improved the ecological stability of un-encapsulated PSCs via interface modification of the top metal electrode. We used CH3NH3PbI3-xClx perovskite as the light absorber and Ag metal as the top electrode. The interface of Ag electrode was modified by introducing a thin layer of MoOx/Al before Ag. We observed that MoOx/Al interlayer before Ag imparts better stability to the devices than conventional Ag electrode only. We found that MoOx/Al interlayer impedes the diffusion of oxygen and metal electrode into the perovskite film and considerably halts the device degradation upon being kept for about 350 h under laboratory ambient conditions (room temperature 25±2oC and humidity 40±5%). This work mainly highlights the role of interfaces in PSCs degradation, and will help to address the stability issues in PSCs. [ABSTRACT FROM AUTHOR]

Multicomponent chalcogenides are a class of derived materials that present a compelling vision that allows for the realization of benefits that are limited in their pristine counterparts. CIGSSe is one such material that constitutes the dual role of prominent chalcogens, i.e., sulfur and selenium. The benefits possessed due to both sulfur and selenium's presence influence the improvement in properties compared to their other counterparts. The dual role offered by both the constituents is noteworthy as one of them, i.e., sulfur, aids in enhancing the material's bandgap. Simultaneously, the other, i.e., selenium, is responsible for eliminating the porosity in thin-films of these chalcogenides. Comparing the properties of individual CIGSe and CIGS with quinary CIGSSe can lead to the discernment of a material with properties particularly desirable for the potential photovoltaic absorber. To the best of the author's knowledge, the quinary CIGSSe nanocrystals' colloidal synthesis employs organic ligands-TOP(tri octyl phosphine)/TOPO (tri octyl phosphine oxide) has been reported for the first time. Technologically, this solution-based synthesis's main benefit is the ease of formation of the colloidal-ink for a scalable film formation on various compatible substrates (rigid/flexible) via the printing route for photovoltaics application. Fig. 1 : Schematics of Hot-Injection route for the synthesis of TOPO/TOP-capped CIGSSe nanoparticles and Spin Casting of Thin film of CIGSSe. [Display omitted] • Hot-Injection method synthesis of TOPO/TOP-capped CIGSSe np's reported first time • Comparative study of the pristine CIGS, CIGSe and multicomponent (CIGSSe) carried out • XRD & Raman studies endorsed high crystallinity of CIGSSe compared to CIGSe & CIGS • CIGSSe & CIGSe films devoid of any impure phases like C u 2 -x Se etc. unlike for CIGS • Higher current values ∼ mA & E g ∼ 1.4 eV renders CIGSSe ideal for thin film solar cells [ABSTRACT FROM AUTHOR]