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The reduction of the series resistance in multi‐junction solar cells is of high importance for attaining peak efficiencies in concentrator photovoltaics. This study showcases strategies to reduce the sheet resistance of the uppermost subcell of a direct wafer bonded four–junction devices, since it contributes significantly to the series resistance. Therefore, electron mobilities in n–type AlGaInP, lattice matched to GaAs, are investigated across bandgap energies between 1.9 and 2.1 eV and various doping concentrations. The sheet resistances for AlGaInP rear heterojunction cells are determined for the integration in a two terminal four‐junction solar cell. The rear heterojunction cell architecture effectively addresses the sheet resistance optimization because it features a thick n‐type doped absorption layer. The sheet resistance of our current world record quadruple‐junction solar cell with 47.6% efficiency under the 665‐fold concentrated AM1.5d spectrum is 550 Ω sq−1. Herein, it is shown that optimizing the n‐absorption layer in the 1.90 eV GaInP top cell can reduce the sheet resistance to 250 Ω sq−1 without deteriorating the short–circuit current density and current matching. This reduction corresponds to a 5 mΩ cm2 improvement in specific series resistance, which would elevate the efficiency of this device to 48.2%. [ABSTRACT FROM AUTHOR]

Optimally enhancing the performance of perovskite silicon tandem solar cells comes with accurate identification of loss origins in the device in combination with optoelectrical device simulations assessing the respective efficiency gains to prioritize optimization pathways. Herein, various characterization methods, namely, spectrally resolved photoluminescence (PL), transient-PL, PL-based implied opencircuit voltage (iVOC) imaging, spectrometric characterization, and Suns-VOC measurements are combined to quantify current density-voltage (jV) photovoltaic metric losses of a fully-textured perovskite silicon tandem solar cell (26.7% efficiency). The extracted device characteristic parameters are then used as a reference for the comprehensive optoelectrical Sentaurus simulation model which precisely reproduces the experimentally obtained optical and electrical solar cell characteristics, considering mobile ion dynamics. Subsequently, starting from the current device design, the authors alleviate one step at a time the loss constraints and show the impact of each loss channel on the efficiency, identifying the three major ones to be at the: 1) perovskite/C60 interface (-4.6%abs), 2) the series resistance (-2.9%abs), and 3) light management (-2.1%abs), which limit the VOC, fill factor, and jSC of the device, respectively. Furthermore, it is demonstrated that a practical efficiency potential of 39.5% can be regarded as a practical limit for the presented tandem device architecture. [ABSTRACT FROM AUTHOR]

Oxygen precipitates are among the most detrimental oxygen‐related silicon bulk defects formed during solar cell manufacturing. These defects are formed only during high‐temperature processes, impeding an identification of prone materials during incoming inspection. Moreover, the prediction of oxygen‐precipitate‐related bulk charge carrier recombination currently requires advanced numerical simulation. This work presents an easily implementable model to predict the bulk carrier lifetime limit, using the temperature–time profile of a high‐temperature process as well as the material properties as the input data. In addition to published analytical descriptions of oxygen precipitation, an empirical description of the retarded growth of small precipitates is included. Furthermore, the time‐lag in nucleation is explicitly considered, which is, to our knowledge, not implemented in oxygen precipitation modeling so far. The calibration of the two free parameters of the model is achieved using the experimental data of 19 different thermal process combinations performed using a single material. This results in a good agreement not only for the material used for calibration but also for other silicon materials. A validation based on passivated emitter and rear cells as well as on test structures confirms the ability of the model to predict bulk carrier lifetimes after solar cell processing. [ABSTRACT FROM AUTHOR]

Transition metal oxides (TMOs) are of increasing importance for many applications reaching from thin-film transistors and non-volatile memory to novel contact layers in photovoltaics. Due to their tunable electrical properties and high transparency, TMOs are also promising candidates as contact layers in silicon heterojunction solar cells already leading to cell efficiencies of about 22%. However, the current extraction of charge carriers via these thin contact layers is still not fully understood. To assist the engineering of novel silicon heterojunctions, numerical device simulations are used to improve knowledge regarding relevant heterojunction and thin film properties. The efficient current extraction from a silicon absorber is investigated with Sentaurus TCAD for a TMO-based hole contact. It is shown that for an ideal hole extraction from the induced crystalline silicon pn-junction via the amorphous silicon buffer and the TMO into the external metal electrode, two requirements have to be fulfilled: (A) A sufficiently high TMO work function is needed to ensure a high hole conductivity (via a high charge carrier ratio p/n) in the induced pn-junction within the silicon absorber. (B) Extraction of those holes into the TMO calls for efficient trap-assisted tunneling. Experimental evidence for a limitation of hole extraction by (A) and (B) is given for a variety of TMO based hole contacts using molybdenum oxide. [ABSTRACT FROM AUTHOR]

A thin, lightweight, flexible solar cell is developed that maximizes the power‐to‐mass ratio under AM0 illumination and has a competitive efficiency after typical high energy electron irradiation. The inverted metamorphic triple junction (IMM3J) solar cells with Ga0.51In0.49P/GaAs/Ga0.73In0.27As subcells are grown on GaAs substrates and have a total epitaxy thickness of about 10 μm. After epitaxial growth, the inverted layer stack is metallized, with the metal serving as back‐contact, back reflector and support layer for the ultra‐thin solar cells before the GaAs substrate is separated by an epitaxial lift‐off (ELO) process. The nondestructive nature of the ELO process makes multiple reuses of the GaAs substrate possible. The solar cell structure is optimized for maximum EOL efficiency, that is, after 1‐MeV electron irradiation with a fluence of 1 × 1015 cm−2, by means of simulations that include the irradiation induced defects in the various semiconductor alloys. Assuming realistic charge carrier lifetime in the materials, we predict a near‐term efficiency potential for the IMM3J ELO of 30.9% under AM0 illumination before and 26.7% after irradiation. Several IMM3J ELO solar cells with an area of approximately 20 cm2 from different development stages were tested under AM0 illumination. The newest solar cells (generation III) with a mass density of only 13.2 mg/cm2 reach conversion efficiencies of 30.2% at 25°C. The resulting power‐to‐mass ratio of 3.0 W/g for the bare solar cell is one of the highest published ratios. After irradiation, a conversion efficiency of 25.4% was measured for "generation II" devices under AM0 illumination, which corresponds to a power‐to‐mass ratio of 2.6 W/g. IMM3J ELO solar cells from "generation I" were also tested for mechanical stability as "de‐risking" test of this new cell technology. No degradation of the cell performance was found after dipping the cell in liquid N2 and then heating up to 25°C for five times, despite of strong deformation of the flexible cell during the temperature cycle. [ABSTRACT FROM AUTHOR]

Low‐cost and high‐efficiency tandem solar cells are promising candidates for a future industrial mass production. Nowadays, the passivated emitter and rear cell (PERC) technology makes up the major market share; therefore, it is an attractive option to use the PERC technology as bottom cell concept for a perovskite–silicon tandem device. Long‐term optimization of the PERC technology led to highly efficient, low‐cost, and mature devices. For PERC‐like bottom cells, mainly an adapted front‐side design is needed: Design constrains of a PERC single junction are relaxed to some extent, because such an updated PERC bottom cell only needs to absorb long wavelength photons, transports about half the current and, in a monolithic tandem, lateral transport, and the use of firing‐through local silver contacts is not a mandatory prerequisite. Consequently, to make PERC suitable for tandem application, a systematic reevaluation of the current PERC technology is performed here considering five different front‐side concepts. We investigate locally contacted and full‐area transparent conducting oxide (TCO)‐based interconnection concepts for PERC, as well as the full‐area tunnel oxide passivating contact (TOPCon). Our simulation work elaborates on the advantages and physical constrains of each concept and gives guidelines for the optimization of the phosphorus diffused emitter and front interconnection layers. We conclude that both full‐area and locally contacted front‐side concepts are promising candidates for achieving tandem cell efficiencies of about 30%. In this work we focus on how to make the mainstream silicon solar cell technology – namely the passivated emitter and rear cell (PERC) – suitable as bottom cell in a perovskite‐silicon tandem device. A detailed optical and electrical simulation model incoporating the parasitic absorption losses and (tunneling) transport at the different bottom cell front side concepts (including passivating contact schemes like TOPCon) was elaborated in Sentaurus TCAD which enables to predict the tandem effi-ciency poten-tial of several PERC‐like bottom cells. [ABSTRACT FROM AUTHOR]

To unlock the full potential of perovskite–silicon tandem solar cells with >30% efficiency at presumably low cost, the transparent conductive oxides (TCOs) and metal grid at the front side need to be adapted compared to classical silicon heterojunction (SHJ) solar cells. By means of optical and electrical modelling, we consider the main aspects to optimize the front electrode for the tandem case, where in contrast to silicon single junction devices, there are (i) different optical properties including a lower refractive index of the perovskite absorber (ii) about half the current, thus quarter the resistive power losses for the same series resistance contribution (iii) lateral transport at the front needs to be provided solely by the front TCO layer and (iv) lower thermal stability of the perovskite, which affects TCO deposition conditions and results in a less efficient sintering of the silver screen printing pastes. This study concludes that compared to silicon heterojunction cells, the thickness of the front TCO should be reduced from 75 nm to around 20 nm, resulting in less parasitic absorption and a potential cost reduction of 1.46 €ct/cell for ITO. We investigate the impact of different front metallization including plating and silver screen printing and showcase that for multi‐wire interconnection concepts, the number of wires can be reduced from 18 wires to 9 or even less depending on the front metallization. Finally, we give an outlook on the silver consumption and levelized cost of electricity. [ABSTRACT FROM AUTHOR]

In this work an inverted metamorphic four junction (IMM4J) solar cell with 30.9% conversion efficiency in beginning of life conditions under the AM0 (1367 W/m2) spectrum is presented. Additionally, our newest improved IMM3J cell, consisting of Ga0.51In0.49P/GaAs/Ga0.73In0.27As subcells, with 30.6% efficiency is also shown. The IMM4J solar cells consist of Al0.05Ga0.46In0.49P/Al0.14Ga0.86As/Ga0.89In0.11As/Ga0.73In0.27As subcells and are epitaxially grown by metal organic vapor phase epitaxy (MOVPE) on a GaAs substrate. These IMM solar cells achieve power-to-mass ratios of 3 W/g or more, which is more than three times higher than standard germanium based triple or four junction space solar cells. The losses in comparison to the simulated near-term potential efficiency of 33.8% for the IMM4J are analyzed in detail. Furthermore, the irradiation behavior for 1 MeV electron fluences of 1 × 1014 e−/cm2 and 2.5 × 1014 e−/cm2 for the IMM4J cells was investigated. A roadmap to further develop this concept towards an IMM5J with a realistic begin of life (BOL) efficiency potential of 35.9% under AM0 is presented. [ABSTRACT FROM AUTHOR]

Identification of the lifetime limiting defects in silicon plays a key role in systematically optimizing the efficiency potential of material for solar cells. We present a technique based on temperature and injection dependent photoluminescence imaging to determine the energy levels and capture cross section ratios of Shockley-Read-Hall defects. This allows us to identify homogeneously and inhomogeneously distributed defects limiting the charge carrier lifetime in any silicon wafer. The technique is demonstrated on an n-type wafer grown with the non-contact crucible (NOC) method and an industrial Czochralski (Cz) wafer prone to defect formation during high temperature processing. We find that the energy levels for the circular distributed defects in the Cz wafer are in good agreement with literature data for homogeneously grown oxide precipitates. In contrast, the circular distributed defects found in NOC Si have significantly deeper trap levels, despite their similar appearance. [ABSTRACT FROM AUTHOR]

Perovskite–silicon tandem solar cells have shown a rapid progress within the past 5 years in terms of their research cell efficiency and are currently being investigated as candidates for the next generation of industrial PV devices. This raises the question of which silicon bottom cell will be most suitable for tandem application. Currently, the silicon heterojunction (SHJ) technology dominates in tandem research achieving world records. However, it is an open issue of how to transfer these research results to industrial mass production, which is driven by cost reduction and resource efficiency and includes challenges like upscaling and long‐term stability. Therefore, it is highly relevant for the PV industry to get reliable and predictive estimates on the efficiency and cost potential, as well as technologically feasible solutions. In this work, we elaborate on silicon bottom cell concepts based on the PERC, TOPCon, and SHJ technology combined with two different interconnection concepts. For each tandem device, the efficiency potential is investigated by means of an experimentally validated simulation model. Second, we evaluate the bottom cell concepts in terms of all‐in cell costs per piece. Bringing the efficiency potential and cost evaluation together allows us to assess the different tandem cell concepts in terms of all‐in module cost per watt peak. Our results show that perovskite–silicon tandem devices are promising candidates to significantly reduce the levelized cost of electricity and, in particular, that the "race" for the best silicon bottom cell is still open to all the investigated bottom cell technologies. [ABSTRACT FROM AUTHOR]

For solar cells operating under the broad‐band solar spectrum, the photovoltaic conversion efficiency is fundamentally limited by transmission and thermalization losses. For monochromatic light, these losses can be minimized by matching the photon energy and the absorber material's bandgap energy. Furthermore, for high‐crystal‐quality direct semiconductors, radiative recombination dominates the minority carrier recombination. Light‐trapping schemes can leverage reabsorption of thereby internally generated photons. Such photon recycling increases the effective excess carrier concentration, which, in turn, increases photovoltage and consequently conversion efficiency. Herein, a back surface reflector underneath a GaAs/AlGaAs rear‐heterojunction structure leverages photon recycling to effectively reduce radiative recombination losses and therefore boost the photovoltage. At the same time, resonance in the created optical cavity is tailored to enhance near‐bandgap absorption and, thus, minimize thermalization loss. With a thin film process and a combined dielectric–metal reflector, an unprecedented photovoltaic conversion efficiency of 68.9 ± 2.8% under 858 nm monochromatic light at an irradiance of 11.4 W cm−2 is demonstrated. [ABSTRACT FROM AUTHOR]

III–V/Si multi‐junction solar cells are potential successors to the silicon single‐junction cell due to their efficiency potential of up to 40% in the radiative limit.[1] Herein, latest results of epitaxially integrated GaInP/GaAs/Si triple‐junction cells are presented. To reduce parasitic absorption losses, which have limited the current density in the Si bottom cell in the previous devices, transparent AlxGa1–xAsyP1–y step‐graded metamorphic buffers are investigated. Compared with previous GaAsyP1–y step‐graded buffers, the transmittance is enhanced significantly, while no significant impact on the threading dislocation density is observed. Implemented into a new triple‐junction solar cell, an increase in short‐circuit current density from 10.0 to 12.2 mA cm−2 is achieved, leading to a new record conversion efficiency of 25.9% under AM1.5g conditions. [ABSTRACT FROM AUTHOR]

The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected. [ABSTRACT FROM AUTHOR]

Abstract: This paper discusses degradation phenomena in crystalline silicon. We present new investigations of the light‐ and elevated temperature‐induced degradation of multicrystalline silicon. The investigations provide insights into the defect parameters as well as the diffusivity and solubility of impurity species contributing to the defect. We discuss possible defect precursor species and can rule out several metallic impurities. We find that an involvement of hydrogen in the defect could explain the characteristic observations for light‐ and elevated temperature‐induced degradation. Furthermore, we demonstrate analogies to the light‐induced degradation mechanisms at elevated temperatures observed in floatzone silicon, where several experimental results also indicate an involvement of hydrogen in the defect. Based on the similarities between multicrystalline and floatzone silicon, we suggest that both degradation phenomena might be caused by the same or similar defects. As we do not expect large concentrations of metals in floatzone silicon, we suggest that complexes of hydrogen and a species introduced during crystal growth might cause both degradation phenomena. [ABSTRACT FROM AUTHOR]

This work reports on state-of-the-art silicon material characterization by calibrated photoluminescence (PL) imaging. PL imaging techniques allow for a characterization of a large variety of material properties, ranging from bulk and surface recombination properties of bare silicon ingots, to crystal structure, dopant concentration, and bulk lifetime of silicon wafers up to material limiting impurities. In combination with solar cell simulations, injection-dependent PL imaging of processed wafers provides a method for determining the material's efficiency potential. In this contribution, we present two methods for imaging the concentration of interstitial iron at passivated silicon slices and at unpassivated silicon ingots. The latter is achieved by our latest progress in PL-based charge carrier bulk lifetime measurements with highest sensitivity, giving access to the bulk recombination properties of the ingot. Additionally, we present an improved analysis of specific loss mechanisms in silicon based on de-smeared injection-dependent lifetime images of processed wafers, which is demonstrated on the example of the bulk-related efficiency limitations in n-type high-performance multicrystalline silicon. This latest progress rounds off the established techniques, enhancing the potential of PL-based imaging techniques for a comprehensive assessment of silicon material quality, from limitations in bare silicon ingots to efficiency loss mechanisms in processed samples. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

In this paper, we study the effect of an enlarged surface area of nanotextured crystalline silicon wafers on the formation of n-type emitters using a tube diffusion process applying POCl 3 as P dopant source. A fast, single-step and industrially viable F 2 -based dry texturing process is used to perform nanotexturing of Si wafers. This process is presented as an alternative route of nanotexturing in comparison to the two-step nanotexturing approach of creating black silicon and then modifying it with an alkaline or acidic solution. Predictive simulations of phosphorous in-diffusion aided by microscopical characterization of the selected emitters are used to understand the formation of emitter in nanotextured surfaces. Based on these investigations, we show that the optimized emitter leads to a significant improvement in short circuit current density ( J sc ≥0.7 mA/cm 2 ) of nanotextured mc-Si solar cells in comparison to the industrial standard acidic textured solar cells. [ABSTRACT FROM AUTHOR]

An important aspect of Process Simulators for photovoltaics is prediction of defect evolution during device fabrication. Over the last twenty years, these tools have accelerated process optimization, and several Process Simulators for iron, a ubiquitous and deleterious impurity in silicon, have been developed. The diversity of these tools can make it difficult to build intuition about the physics governing iron behavior during processing. Thus, in one unified software environment and using self-consistent terminology, we combine and describe three of these Simulators. We vary structural defect distribution and iron precipitation equations to create eight distinct Models, which we then use to simulate different stages of processing. We find that the structural defect distribution influences the final interstitial iron concentration ([ $$\hbox {Fe}_i$$ ]) more strongly than the iron precipitation equations. We identify two regimes of iron behavior: (1) diffusivity-limited, in which iron evolution is kinetically limited and bulk [ $$\hbox {Fe}_i$$ ] predictions can vary by an order of magnitude or more, and (2) solubility-limited, in which iron evolution is near thermodynamic equilibrium and the Models yield similar results. This rigorous analysis provides new intuition that can inform Process Simulation, material, and process development, and it enables scientists and engineers to choose an appropriate level of Model complexity based on wafer type and quality, processing conditions, and available computation time. [ABSTRACT FROM AUTHOR]

The nanostructured surface - also called black silicon (b-Si) - is a promising texture for solar cells because of its extremely low reflectance combined with low surface recombination obtained with atomic layer deposited (ALD) thin films. However, the challenges in keeping the excellent optical properties and passivation in further processing have not been addressed before. Here we study especially the applicability of the ALD passivation on highly boron doped emitters that is present in crystalline silicon solar cells. The results show that the nanostructured boron emitters can be passivated efficiently using ALD Al2O3 reaching emitter saturation current densities as low as 51 fA/cm2. Furthermore, reflectance values less than 0.5% after processing show that the different process steps are not detrimental for the low reflectance of b-Si. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

ABSTRACT We studied the precipitation of chromium in multicrystalline silicon during the crystallization process and temperature treatments typical for solar cell processing. A model which was already successfully used for simulating heterogeneous precipitation of iron is transferred to chromium, allowing two-dimensional simulations of dissolved chromium and precipitate density. The observed accordance with spatially resolved measurements demonstrates the similarity of chromium to iron precipitation and the ability of our model to predict the dissolved chromium concentration in multicrystalline silicon. After the crystallization process, a high impact of chromium on the carrier lifetime of wafers originating from an ingot intentionally contaminated with 20 ppma chromium in the melt was observed. The concentration of dissolved chromium was significantly reduced by phosphorus diffusion gettering or oxidation at 815°C. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Multicrystalline (mc) solar cells made from n‐type silicon feedstock have shown record efficiencies of 22.3% in a tunnel‐oxide passivating contact (TOPCon) cell structure. Still, material‐related carrier recombination limits the attainable efficiency. Herein, the findings of metallic impurity and structural defect concentration present in n‐type mc silicon are summarized, and their limiting properties on carrier lifetime and cell performance are elaborated. Applying a dedicated model for carrier recombination at precipitate–silicon interfaces, it is demonstrated that carrier recombination at metallic precipitates may dominate in the analyzed material. Direct evidence of the recombination activity of iron precipitates in n‐type silicon is given by an analysis of intentionally grown iron precipitates: From a comparison of micro X‐ray fluorescence (μXRF) analyses of differently sized iron precipitates and local carrier recombination from micro‐photoluminescence (μPL), a direct correlation with enhanced carrier recombination is found. From these results, it is concluded that the high‐performance n‐type mc silicon is limited by recombination at (decorated) structural defects, namely, dislocation clusters and grain boundaries, whereas defects in the inner grains are not limiting the efficiency potential. Finally, cell degradation under illumination and elevated temperature for n‐type mc‐silicon solar cells are discussed. [ABSTRACT FROM AUTHOR]

In current silicon solar cell technologies, hydrogen is incorporated into the solar cell during the fast-firing process. It passivates defects at the surface and in the bulk, but also leads to light- and elevated-temperature-induced degradation (LeTID). Although it is known that the hydrogen content and the LeTID extent can be reduced by employing a slower cooling ramp during the fast-firing process, the exact mechanism behind this phenomenon remains unclear. This study aims at closing this gap by investigating the impact of cooling ramps with different temperature plateaus on hydrogen (complexes) in B-doped FZ-Si wafers. The fired wafers are analyzed with FT-IR spectroscopy, four-point-probe resistivity measurements, and LeTID tests via effective lifetime measurements. Our findings provide evidence that hydrogen not only diffuses into the silicon bulk but can also effuse out of it during the cooling ramp. A one-dimensional hydrogen model is built in Sentaurus TCAD to simulate the in- and out-diffusion of hydrogen and to compare it with the experimental results. The experimentally determined hydrogen concentrations align with our simulation, with the diffusion being dominated by the fast-diffusing neutral hydrogen H0. Moreover, we find stronger out-diffusion at higher temperatures, resulting in a lower total hydrogen concentration for slower cooling ramps. The extent of LeTID and surface-related degradation (SRD) are found to scale with the final total hydrogen concentration in the bulk. Therefore, modifying the cooling ramp can be an effective tool to optimize the hydrogen content and minimize the impact of degradation phenomena on silicon solar cells. • Hydrogen diffuses in and out of the silicon bulk during the fast-firing process. • A 1-D model is built to explain the temperature-dependent diffusion processes. • We observe a correlation between the hydrogen content and LeTID extent. • Cooling ramp is an effective tool to manipulate H content and suppress LeTID. [ABSTRACT FROM AUTHOR]

Highlights • High-performance p-type mc-Si material is characterized by 13 research groups. • Highest (lowest) lifetime regions limited by interstitial iron (Cu precipitates). • Dislocations reduce cell efficiency by only 0.25% absolute. • Ingot metrology predicts PERC efficiency best using lifetime and dislocation density. • Cell efficiency limited to 22.5% if Fe and Cu density above 1010 cm−3 and 1013 cm−3. Abstract Recent progress in the electronic quality of high-performance (HP) multicrystalline silicon material is reported with measurements and modeling performed at various institutions and research groups. It is shown that recent progress has been made in the fabrication at Trina Solar mainly by improving the high excess carrier lifetimes τ due to a considerable reduction of mid-gap states. However, the high lifetimes in the wafers are still reduced by interstitial iron by a factor of about 10 at maximum power point (mpp) conditions compared to mono-crystalline Cz wafers of equivalent resistivity. The low lifetime areas of the wafers seem to be limited by precipitates, most likely Cu. Through simulations, it appears that dislocations reduce cell efficiency by about 0.25% absolute. The best predictors for PERC cell efficiency from ingot metrology are a combination of mean lifetime and dislocation density because dislocations cannot be improved considerably by gettering during cell processing, while lifetime-limiting impurities are gettered well. In future, the material may limit cell efficiency above about 22.5% if the concentrations of Fe and Cu remain above 1010 and 1013 cm−3, respectively, and if dislocations are not reduced further. [ABSTRACT FROM AUTHOR]

One drawback of passivating contacts in crystalline silicon solar cells is the current loss due to parasitic absorption within the involved material layers. When employed on an illuminated side of the cell, the full spectrum of the incident light will be partly absorbed before reaching the silicon bulk. Additionally, near-infrared (NIR) absorption can substantially reduce the cell's NIR spectral response (SR) also when employed on the non-illuminated side. As those losses are hard to measure directly, optical modeling is crucial for their quantification. This paper presents an extension to an analytical light-trapping model to account for parasitic absorption in the near-surface region via a new parameter A ppp (absorbed fraction per perpendicular pass). We test the model by analyzing i) reflectance measurements on samples with varying doping profiles, ii) SR measurements on TOPCon solar cells with varying back-side poly-silicon layers, and iii) SR measurements of a bifacial silicon heterojunction cell. We show that the model can well be calibrated by fitting a single value for A ppp to reflectance measurements. This enables a quantification of the parasitic absorption loss without requiring knowledge of all layer's optical properties. The model also is able to predict parasitic absorption in TOPCon cells when knowing the thickness and doping density of the poly-Si layer. Having proven the usefulness of A ppp to represent parasitic absorption as a single-valued quantity, we suggest A ppp as a third figure of merit for the quality of a passivating contact, next to the recombination parameter J 0c and the contact resistivity ρ c. • New parameter A ppp quantifies near-surface parasitic absorption in a c-Si solar cell. • A ppp extends an existing analytical light-trapping model. • Model can be fitted to reflectance to quantify parasitic absorption current loss. • Proposed as third figure of merit for a passivating contact besides J 0c and ρ c. [ABSTRACT FROM AUTHOR]