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A denseTiS3sample has been processed by Spark PlasmaSintering. The structural analysis, obtained by coupling powder X-raydiffraction and transmission electron microscopy (TEM), shows thatthe A-variant of the ZrSe3-type structure is stabilizedfor the first time. Defects along the main atomic layer stacking directionsare evidenced by high-resolution TEM, which explain the peculiar X-raypowder diffraction patterns, with strongly anisotropic microstrains.The presence of these structural defects might explain the existenceof a metal-to-insulator transition with a charge localization below TMI≈ 325 K. Large absolute values ofthe Seebeck coefficient, in the range −700 ≤ S≤ −600 μV·K–1, are observed for 100 ≤ T≤ 600 K,together with a low thermal conductivity, κ = 2 W·K–1·m–1at 600 K. The T–1dependence of the lattice part ofκ indicates its phononic character. As the charge carrier concentrationmeasured by Hall effect is too low, n= 1.24 ×1018cm–3, extra doping would be necessaryto decrease its too high electrical resistivity (ρ300K∼ 1.4 Ω·cm) for thermoelectric applications. [ABSTRACT FROM AUTHOR]

A dense TiS3 sample is prepared by solid state reaction of a 1:4 mixture of Ti and S (evacuated quartz ampoule, 600 °C) followed by spark plasma sintering in vacuum and subsequent hot press molding (600 °C, 50 MPa, 10 min). [ABSTRACT FROM AUTHOR]