1. Formation of abnormal dual-peak profiles in large tilt angle boron implantation.
- Author
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Zhu, Lei, Mai, Zhi Hong, and Lam, Jeffrey
- Subjects
- *
BORON compounds , *SILICON , *ARTIFICIAL implants , *MONTE Carlo method ,SIMS (Information retrieval system) - Abstract
Large tilt angle (LTA) implantation has been employed in Si manufacturing processes in many applications, such as lightly doped drain and halo implant. The depth profile of boron ions usually consists of only single peak at incident angle of 0° with respect to the perpendicular of the silicon surface. However, an abnormal dual-peak profile was observed at LTA (>40°) with incident energy of 160 keV. By using a Monte Carlo method to simulate the ion implant process, it was found that the projected range of boron ions agrees completely with the formation of the first peak position that is shallower in depth, while the cause for the second peak that corresponds with a depth much deeper in the Si substrate was unknown. During the simulation, it was also found that when the tilt angle was increased, the sputtering yields and Si displacements increased significantly, and this phenomenon indicates that during LTA implantation, Si damage may not be negligible anymore. The Si damage effect that was as due to either low Si density or transient Si displacement in the simulation could have led to partial incident boron ions penetrating much deeper into the Si substrate and thus, caused the emergence of the second peak. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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